于2014年IEEE的 APEC功率电力电子业界研讨会中，宜普电源转换公司的应用技术专家将分享氮化镓场效应晶体管技术如何于应用中比硅功率MOSFET器件优胜。

硅基增强型功率氮化镓场效应晶体管之全球领导厂商宜普电源转换公司将于2014年APEC技术研讨会以应用为主题进行三场技术演讲，与参与者分享高频谐振转换器及高频、硬开关功率转换器设计。研讨会将于3月16日至20日在德克萨斯州的Fort Worth举行。

EPC8010 100 V gallium nitride FET is optimized for high frequency applications with positive gain into the 3 GHz range.

EL SEGUNDO, Calif. – January 2014 – Efficient Power Conversion Corporation, the world’s leader in enhancement-mode gallium nitride on silicon (eGaN^®) power FETs extends its family of high-speed, high performance transistors with the EPC8010 power transistor. Sold in die form, the EPC8010 is a mere 1.75 mm² with 100 V_DS. Optimized for high speed switching, the EPC8010 has a maximum R_DS(on) of 160 milliohms and input gate charge in the hundreds of pico-coulombs.

The quality of sound reproduced by an audio amplifier, measured by critical performance parameters such as THD (Total Harmonic Distortion), damping factor (DF), and T-IMD (Inter-modulation Distortion), is influenced by the characteristics of the switching transistors used. Class-D audio amplifiers typically use power MOSFETs, however, lower conduction losses, faster switching speed, and zero reverse recovery losses provided by enhancement-mode GaN (eGaN) FETs enable a significant increase in the sonic quality, and higher efficiency that can eliminate heatsinks. The result is a system with better sound quality in a smaller form factor that can be built at a lower cost.

EEWeb
By: Alex Lidow
February, 2014

Enhancement-mode gallium nitride transistors have been commercially available for over four years and have infiltrated many applications previously monopolized by the aging silicon power MOSFET. There are many benefits derived from the latest generation eGaN® FETs in new emerging applications such as highly resonant wireless power transfer, RF envelope tracking, and class-D audio. This article will examine the rapidly evolving trend of conversion from power MOSFETs to gallium nitride transistors in these new applications.

Power Pulse
By: Alex Lidow
February, 2014

EPC9013开发板内含100 V氮化镓场效应晶体管（eGaN®FET），是一种35 A最大输出电流并采用四个半桥式配置的电路设计及配备一个板载栅极驱动器。

宜普电源转换公司(EPC)宣布推出全新开发板 EPC9013 ，内含100 V增强型氮化镓场效应晶体管（EPC2001），使用四个半桥式并联配置及一个板载栅极驱动器，以降压模式工作在达35 A最大输出电流。这种创新设计可增加输出功率之同时并不会降低效率。