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EPC at APEC 2018 by EE Online

EPC at APEC 2018 by EE Online

EPC CEO & Co-Founder, Alex Lidow gives Lee Teschler from EE World Online a tour of the EPC booth at APEC 2018 where EPC demonstrations included a high-power density 48 V – 12 V non-isolated converter capable of delivering over 700 W. In addition, a range of 3-D real-time LiDAR imaging sensors used in autonomous vehicles were displayed. Also, a single desktop implementing a high power resonant wireless charging solution capable of generating 300 W to wirelessly power a wide range of devices including cell phones, notebook computers, monitors, wireless speakers, smart watches, and table lamps.

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Alex Lidow walks Alix Paultre through the EPC booth at APEC 2018

Alex Lidow walks Alix Paultre through the EPC booth at APEC 2018

In this video Alex Lidow, Founder and CEO of EPC, talks to Alix Paultre, Editor-in-Chief of Power Electronics News, about the various demonstrations of GaN-based solutions at the EPC booth at APEC 2018 in San Antonio, Texas. The high-frequency operation and other advanced performance advantages over Silicon enables GaN to empower applications from LIDAR to wireless power transmission. The booth exhibits include examples of these, from a real-time LIDAR demonstration to a running "wireless desk".

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宜普电源转换公司(EPC)的专家携手与工程师发挥氮化镓器件及集成电路的最高性能,不仅替代MOSFET器件,更为市场带来创新设计

宜普电源转换公司(EPC)的专家携手与工程师发挥氮化镓器件及集成电路的最高性能,不仅替代MOSFET器件,更为市场带来创新设计

EPC公司将在3月14至16日于中国深圳及上海各大论坛及展会亮相,展示氮化镓技术的卓越性能如何为整个半导体业界带来全新电源转换设计思路,包括无线充电、DC/DC、激光雷达及汽车等应用领域。

EPC公司的管理及技术团队将在中国深圳及上海于3月14至16日举行的各大业界论坛及展会上,与工程师会面并作技术交流。届时,EPC团队将分享如何发挥氮化镓场效应晶体管(GaN FET)及集成电路的最高性能、创新设计,从而为工程师及其客户,打造共创共赢新局面。

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EPC Introduces Two eGaN ICs Combining Gate Drivers with High Frequency GaN FETs for Improved Efficiency, Reduced Size and Lower Cost

EPC Introduces Two eGaN ICs Combining Gate Drivers with High Frequency GaN FETs for Improved Efficiency, Reduced Size and Lower Cost

EPC2112 and EPC2115 GaN-based monolithic integrated solutions offer power systems designers the ability to increase efficiency in an extremely small size.

EL SEGUNDO, Calif. — March 2018 — Efficient Power Conversion Corporation (EPC) announces the EPC2112 and EPC2115 enhancement-mode monolithic GaN power transistor with integrated driver products. The EPC2112 is a 200 V, 40-mΩ eGaN® FET plus integrated gate driver. In comparison, the EPC2115 is an integrated circuit with dual 150 V, 70-mΩ eGaN FETs plus gate drivers. Both products are capable of operating up to 7 MHz and are available in low inductance, extremely small, 2.9 mm x 1.1 mm BGA surface-mount passivated die.

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APEC 2018: 关于EPC氮化镓器件的专业教育研讨会

APEC 2018: 关于EPC氮化镓器件的专业教育研讨会

Alex Lidow与他的团队队员Michael de Rooij、David Reusch及John Glaser于今天早上的专业研讨会上,与专业工程师(PE)分享实用的议题 -- “发挥氮化镓场效应晶体管及集成电路的最高性能,不仅仅替代MOSFET器件”,使得整个教室被挤得水泄不通。

Planet Analog
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GaN Power Modules Deliver Over 1400 W/in3 for 48 V – 12 V DC-DC and Up to 10 MHz for Point-of-Load Power Conversion

GaN Power Modules Deliver Over 1400 W/in3 for 48 V – 12 V DC-DC and Up to 10 MHz for Point-of-Load Power Conversion

Efficient Power Conversion’s EPC9204 and EPC9205 power modules demonstrate the efficiency enhancements and significant size reduction achieved in DC-DC power conversion using high frequency switching eGaN® power transistors and integrated circuits.

EL SEGUNDO, Calif.— March 2018 — Efficient Power Conversion Corporation (EPC) introduces two new GaN power modules for DC-DC conversion, increasing efficiency across the 48 V to point-of-load power architecture. The EPC9205 is a high-power density PCB-based power module for 48 V – 12 V conversions while the EPC9204 address the 20 V – point-of-load conversion with an ultra-thin profile PCB-based power module.

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基于氮化镓器件的48 V - 12 V非隔离稳压式转换器开发板,其功率密度每立方英寸超过1250W及效率可高于96%

基于氮化镓器件的48 V - 12 V非隔离稳压式转换器开发板,其功率密度每立方英寸超过1250W及效率可高于96%

宜普公司的EPC9130五相开发板展示出采用高频开关eGaN®功率晶体管、极小型化及增强了效率的电源转换方案。

宜普电源转换公司(EPC)的EPC9130 开发板是一款48 V转换至12 V的非隔离稳压式开发板、具用五个相位、每相具12 A、最大输出电流为60安培,开发板的输出功率可以超过700 W。该板具超高功率密度(每立方英寸大于1250 W),其效率高于96%。

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