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宜普电源转换公司(EPC)推出面向48 V DC/DC电源转换、马达控制及激光雷达应用的100 V氮化镓(eGaN)功率晶体管

宜普电源转换公司(EPC)推出面向48 V DC/DC电源转换、马达控制及激光雷达应用的100 V氮化镓(eGaN)功率晶体管

专为功率系统设计师而设的EPC2052功率晶体管是一种100 V、13.5 mΩ并采用超小型芯片级封装的晶体管,可实现74 A脉冲输出电流。面向48 V-12 V DC/DC功率转换器,这些新一代氮化镓场效应晶体管工作在500 kHz频率下,可实现超过97%的效率。如果工作在1 MHz时,则实现超过96%的效率。

宜普电源转换公司(EPC)宣布推出100 V的EPC2052氮化镓场效应晶体管,其占板面积只是2.25平方毫米、最大导通阻抗(RDS(on))为13.5 mΩ及脉冲输出电流高达74 A 以支持高效功率转换。

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It's Time to Rethink Power Semiconductor Packaging

It's Time to Rethink Power Semiconductor Packaging

When the issue invariably turns to the packaging of the power semiconductor – transistor, diode, or integrated circuit – the requests for improvement fall into six categories:

1. Can you make the package smaller?
2. Can you reduce the package inductance?
3. Can you make the product with lower conduction losses?
4. Can you make the package more thermally efficient?
5. Can you sell the product at a lower price?
6. Can you make the package more reliable?

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宜普电源转换公司(EPC)于半导体展与工程师会面、释放创新力量

宜普电源转换公司(EPC)于半导体展与工程师会面、释放创新力量

针对DC/DC、激光雷达(LiDAR)、无线电源及其它很多应用的客户群正在不断地扩大,宜普电源转换公司(EPC)继续其创新之路,在2019年3月及4月里,于全球著名展览会与设计工程师会面并答疑解难,旨在帮助工程师发挥氮化镓技术的优势,携手打造共创共赢的局面。

宜普电源转换公司(EPC)的专家于全球展览会与设计工程师会面,希望加深与氮化镓技术相关的知识交流,使得工程师可以利用基于氮化镓器件的解决方案,创新新一代的设计。

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Powering graphics processors from a 48-V bus

Powering graphics processors from a 48-V bus

New converter topologies and power transistors promise to reduce the size and boost the efficiency of supplies that will run next-generation Artificial Intelligence (AI) platforms. In all the topologies with 48 VIN, the highest efficiency comes with using GaN devices. This is due to their lower capacitance and smaller size. With recent pricing declines in GaN power transistors, the cost comparison with silicon-based converters now strongly favors GaN in all the leading-edge solutions.

Power Electronic Tips
March, 2019
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Efficient Power Conversion (EPC) to Showcase Industry-Leading Performance in High Power Density DC-DC Conversion and Multiple High-Frequency Applications Using eGaN Technology at APEC 2019

Efficient Power Conversion (EPC) to Showcase Industry-Leading Performance in High Power Density DC-DC Conversion and Multiple High-Frequency Applications Using eGaN Technology at APEC 2019

EPC will exhibit live demonstrations showing how GaN technology’s superior performance is transforming power delivery for entire industries including computing, communications, and automotive.

EL SEGUNDO, Calif. — March 2019 — The EPC team will be delivering eleven technical presentations on gallium nitride (GaN) technology and applications at APEC 2019 in Anaheim, California from March 17th through the 21st. In addition, the company will demonstrate its latest eGaN FETs and ICs in customers’ end products that are enabled by eGaN technology.

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The Power and Evolution of GaN, Part 6: GaN Technology Adoption and Roadmap

The Power and Evolution of GaN, Part 6: GaN Technology Adoption and Roadmap

In the final installment of this series, how GaN has met the requirements to displace silicon is explored. As the adoption rate of GaN explodes, it is important to remember that, while GaN has made many advancements in just a few short years, it is still far from its theoretical performance limitations and thus there are profound improvements that can continue to be achieved. In time, the performance and cost advantages of GaN-on-silicon will result in a majority of applications currently using silicon-based devices converting to the smaller, faster, cheaper, and more reliable GaN technology.

Power Systems Design
February, 2019
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