EPC分享由专家制作的关于终端应用的6个视频，例如无线电源传送、单级48 V–1 V DC/DC转换，以及采用氮化镓晶体管及集成电路、面向4G/LTE基站的包络跟踪等应用。

宜普电源转换公司制作了6个视频，于网上分享采用eGaN^® FET及集成电路（IC）并面向最终用户的应用。这些视频展示出氮化镓技术如何改变了我们的生活方式及挑战功率系统设计工程师如何在他们的新一代功率系统设计中发挥氮化镓场效应晶体管的卓越性能。

采用先进氮化镓晶体管及集成电路（IC）的功率系统设计工程师现在可以利用互动式、网上参数选型工具，替他们的功率转换系统找出基于氮化镓器件的最优解决方案。

宜普电源转换公司（EPC）宣布推出网上氮化镓（GaN）产品选型及搜索工具。该互动式选型指南为功率系统设计工程师提供以下的优势：

通信的数学基础始于信息论的创始人Claude Shannon于1948的著作《通信的数学理论》。他把信息通信简化为1及0数字，实质上是二进制数字。该理论可以于现实世界中有噪声的环境下，准确无误地传输数据。Shannon在2016年4月30日本来是他的百年诞辰。

EDN Network
Steve Taranovich
2016年4月16日
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Freebird Semiconductor and Efficient Power Conversion (EPC) have entered into an agreement whereby Freebird will develop products for use in high reliability space and harsh environment applications based upon eGaN^® power transistors and integrated circuits.

NORTH ANDOVER, MA. — April 2016 — Freebird Semiconductor Corporation, North Andover, Massachusetts announces the signing of an agreement with Efficient Power Conversion Corporation (EPC), the leading provider of enhancement-mode gallium nitride power transistors to develop products for use in high reliability, space, and harsh environment applications based upon EPC’s eGaN^® technology.

In this installment of WiGaN, a differential-mode class-E amplifier for 6.78 MHz loosely coupled resonant wireless power applications is presented. It uses the EPC2037 eGaN^® FET which has a small (0.9 mm x 0.9 mm) footprint and can be driven directly with a logic gate. The amplifier is AirFuel™ Class 2 compatible, capable of delivery up to 6.5 W load power over an impedance range of 70j Ω.

EEWeb - Wireless & RF Magazine
Yuanzhe Zhang, Ph.D., Director of Applications Engineering
Michael de Rooij, Ph.D., Vice President of Applications Engineering
April 12, 2016
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In this short video, EPC's Alex Lidow explains why GaN FETs may make it possible to wirelessly charge a variety of vehicles, including flying drones. Wireless charging circuits employing GaN FETs work at 13.56 MHz, a switching frequency difficult to reach with ordinary silicon FETs. The GaN transistors used are also five to ten times smaller than silicon devices able to handle the same power levels.

Design World
April 11, 2016
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In this short video, EPC's Alex Lidow explains why GaN FETs can comprise circuits able to deliver Lidar resolutions down to a couple inches. Conventional silicon FETs performing the same tasks would be able to resolve images only down to a few feet. The secret is in the super-fast rise and fall times made possible by the GaN FETs.

Design World
April 11, 2016
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宜普电源转换公司的首席执行官Alex Lidow说硅材料是半导体的主要材料，它一直以来是电子行业背后的推动力。可是，它的性能已经到了极限。位于美国洛杉矶的宜普公司正在探究以具备更高的性能的氮化镓（GaN）器件颠覆市场并且取得硅基器件价值4000亿美元（2770亿英镑）的市场份额。Alex说：「这是业界首款比硅基器件的成本更低并且具备更高的性能的半导体。」

Wired Magazine
Emma Bryce
2016年3月31日
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Emerging applications such as 48V-to-point-of-load (POL), wireless power and USB Type-C had a lot of interest. Google joined the Open Compute Project a few weeks ago and proposed a computer server-rack architecture based on a 48V power-distribution bus to improve overall system efficiency. While the 48V bus has been around for a long time, the push (and challenge) is for high-efficiency 48V-to-POL voltage regulators. EPC showcased TI’s 48V-to-1V EVM which uses the LMG5200 GaN module (driver and FETs), announced at APEC last year, and a new TI analog controller (TPS53632G).

TI E2E Community
Pradeep Shenoy
Mar 28, 2016
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您可能阅读过ECN杂志编辑（及新闻总监）所写的关于幕后故事的推文，以及一张照片可比千言万语表达得更好。可是，有的时候，听听工程師分享他們的感想及真知灼見可以是更有价值的体验。

我就是这么想，在加州Long Beach举行的APEC会议上，与多位工程师及与会者见面以找出本届APEC的内幕消息。我们比较了APEC与去年研讨会的盛况、目前业界的主要发展方向及各公司对APEC研讨会的评价。

ECNMag.com
作者：Kasey Panetta
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从本年的APEC研讨会的各个讨论题目显然可以看到，氮化镓功率技术的相关知识备受关注的程度，是前所未有的。采用氮化镓技术的产品路演、全新产品及技术发布、全体会议对氮化镓技术的关注及其他讨论题目都让与会者感到氮化镓功率器件已经来临，而氮化镓技术正在进驻市场。而且讨论重点也稍微改变，从讨论氮化镓器件可以做什么，改为讨论需要其他什么资源及支持，才可以实现基于氮化镓功率晶体管的全新产品开发方案。

How2Power Today
David Morrison
2016年4月1日
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