Thirty years of silicon power-MOSFET development has taught us that one of the key variables controlling the adoption rate of a disruptive technology is how easy the new technology is to use. This principle has guided the design of EPC’s enhancement-mode GaN (eGaN) transistors. This article explains why eGaN devices are easy to use, describing how they operate and their similarities and differences versus power MOSFETs.

By Johan Strydom
How2Power
June, 2010

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Due to its advantages GaN will probably become the dominant technology. GaN has a much higher critical electric field than silicon which enables this new class of devices to withstand much greater voltage from drain to source with much less penalty in on-resistance.

By Alex Lidow, PhD
Bodo’s Power Systems
June, 2010

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