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宜普发挥GaN成本优势目标超车Si MOSFET

宜普发挥GaN成本优势目标超车Si MOSFET

宜普电源转换公司首席执行官兼共同创办人Alex Lidow接受DIGITIMES专访,提到GaN主要会被应用在650V及以下市场。反之碳化硅则是主导650V以上的市场,它可望取代硅基绝缘栅极双极性晶体管。宜普也在开发对速度及尺寸特性极为要求的400V以下市场。且致力于制造比Si功率元件拥有更高性能、更具成本竞争力的GaN元件。

DIGITIMES Asia
2023年9月
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EPC Space Brings GaN to the Edge of the Atmosphere

EPC Space Brings GaN to the Edge of the Atmosphere

Bringing GaN to the final frontier, EPC Space introduced two new radiation-hardened GaN transistors for high-current switching in space-based applications. As the number of commercial satellites continues to increase, designers require more options for space-ready power electronics with improved current handling.

All About Circuits
September, 2023
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采用通过单片GaN集成电路提高性能,同时、缩小降低尺寸和降低成本

采用通过单片GaN集成电路提高性能,同时、缩小降低尺寸和降低成本

在功率转换、电机驱动和激光雷达等应用中,15 V至350 V范围内的氮化镓(GaN)异质结场效应功率晶体管显示出比硅具有显著优势的,无论是在效率、尺寸、速度和成本方面。这些优势源于关键电场的数量级比硅高出一个数量级,具体而言,尤其是高三倍的带隙方面有3倍的优势,和高1.3倍的电子迁移率方面有1.3倍的优势。

Bodo’s Power Systems
2023年9月
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GaN HEMT Package Improves Paralleling Of Devices In Space Power Applications

GaN HEMT Package Improves Paralleling Of Devices In Space Power Applications

As more processing power and more complex loads are placed on-orbit or into deep space missions, it is sometime necessary to parallel two or more power switches. However, conventional power device packages, such as the FSMD-A/B/C/D and their I/O pad provisioning make it difficult to accomplish paralleling these devices in a performance-conscious manner. When paralleled, the gate and source-sense pads on these packages either serve to block the most efficient/shortest interconnect from package-to-package for the drain and source connections or for the gate and source-sense pads. So in parallel configurations, there is always a compromise between optimized drain-source load-circuit performance and gate-source-sense drive-loop performance. This article introduces the FSMD-G discrete HEMT package and explains how the reconfiguration of its I/O pads overcomes these limitations when paralleling GaN HEMTs.

How2Power
September, 2023
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GaN FET可实现5130 W/in3 的基准功率密度,支持人工智能和先进计算应用

GaN FET可实现5130 W/in3 的基准功率密度,支持人工智能和先进计算应用

EPC9159是一款1 kW、48 V/12 V的LLC转换器,占板面积仅为17.5 mm x 22.8 mm,可实现5130 W/in3最先进的功率密度。

宜普电源转换公司(EPC)宣布推出EPC9159参考设计。这是一款48 V/12 V的LLC转换器,专为高功率密度48 V服务器电源和DC/DC转换器而设计。该参考设计可在17.5 mm x 22.8 mm的微小封装内提供高达1 kW的功率,其功率密度为5130 W/in3。这是在初级侧和次级侧电路中采用于高开关频率工作的氮化镓(GaN)功率器件才可以实现的。

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Predicting GaN Device Lifetimes In Solar Microinverters And Power Optimizers

Predicting GaN Device Lifetimes In Solar Microinverters And Power Optimizers

Microinverters and power optimizers are widely utilized in modern solar panels to maximize energy efficiency and conversion. Such topologies and implementations usually require a minimum of 25 years of lifetime, which is becoming a critical challenge for market adoption. Low-voltage gallium nitride (GaN) power devices (VDS rating < 200 V) are a promising solution and are being used extensively by an increasing number of solar manufacturers.

In this article, a test-to-fail approach is adopted and applied to investigate the intrinsic underlying wear-out mechanisms of GaN transistors. The study enables the development of physics-based lifetime models that can accurately project the lifetimes under the unique demands of various mission profiles in solar applications.

How2Power
August, 2023
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A high efficiency, 3 kW capable, 2-phase, 3-level Converter using paralleled eGaN FETs

A high efficiency, 3 kW capable, 2-phase, 3-level Converter using paralleled eGaN FETs

As the revolution of renewable energy as well as transportation electrification progresses, the need for residential energy storage systems is increasing. A high efficiency DC-to-DC converter is usually required to exchange energy generated from renewable sources, such as solar panels, with a battery. The fast-switching speed and low RDS(on) of gallium nitride (GaN) FETs can help save energy by reducing power consumption inside the DC-to-DC converter. This article shows how to design a high efficiency 100 – 250 V to 40 - 60 V DC-to-DC converter.

Power Electronics Europe
May, 2023
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汽车电子用于低压配电的演变—从 ICE 、MHEV 到目前的BEV汽车应用

汽车电子用于低压配电的演变—从 ICE 、MHEV 到目前的BEV汽车应用

汽车电子在过去30年内经历了几个时代的演变。 从主要采用机械或发动机驱动系统的纯内燃机 (ICE),到添加电力动力的轻度混合动力 (MHEV),再到全电池电动汽车 (BEV)应用。 在这三个时代中,用于转换和分配电力的架构甚至基本半导体元件都发生了重大的变化。 本文讨论了这个进化过程和对将来进化的方向做出了一些推测。

Power Systems Design
2023年8月
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小型化的低压 GaN FET的准确表征

小型化的低压 GaN FET的准确表征

低压 GaN FET 可实现更小、冷却要求最小化和效率更高的解决方案

与采用传统的硅基功率 MOSFET的应用相比,低压 GaN FET(即 100 V)可实现更小,冷却要求最小化和效率更高的解决方案。 本文讨论了氮化镓器件如何应对动态性能需要重复且可靠的表征的挑战。 定制氮化镓夹具和测试板的机械和电气设计仔细、周全,就可以克服其中许多挑战,使您能够在设计功率转换器时,自信地使用这些新型宽能隙器件。

Power Electronics News
2023年7月
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40 V Rad Hard GaN FETs Set New Performance Standards for Demanding Space Applications

40 V Rad Hard GaN FETs Set New Performance Standards for Demanding Space Applications

Efficient Power Conversion (EPC) expands its family of radiation-hardened (rad-hard) gallium nitride (GaN) products for power conversion solutions with two new 40 V devices rated at 62 A and 250 A to address critical spaceborne and other high-reliability applications.

EL SEGUNDO, Calif.— July 2023 — EPC announces the introduction of two new 40 V rated radiation-hardened GaN FETs.EPC7001 is a 40 V, 4 mΩ, 250 APulsed, rad-hard GaN FET in a small 7 mm2 footprint. EPC7002 is a 40 V, 14.5 mΩ, 62 APulsed, rad-hard GaN FET in a tiny 1.87 mm2 footprint.  Both devices have a total dose radiation rating greater than 1,000K Rad(Si) and SEE immunity for LET of 83.7 MeV/mg/cm2 with VDS up to 100% of rated breakdown. These new devices, along with the rest of the Rad Hard family, are offered in a chip-scale package.  Packaged versions are available from EPC Space.

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In-situ RDS(on) Characterization and Lifetime Projection of GaN HEMTs under Repetitive Overvoltage Switching

In-situ RDS(on) Characterization and Lifetime Projection of GaN HEMTs under Repetitive Overvoltage Switching

Transient voltage overshoot is a common phenomenon in GaN high electron mobility transistors (HEMTs) under high slew rate switching conditions. The dynamic parametric instability under such stress is a critical concern for GaN applications. This work, for the first time, accurately characterized the evolution of dynamic on-resistance (RDS(on)) in GaN HEMTs under repetitive voltage overshoot up to billions of switching cycles. The dynamic RDS(on) increase was found to be the dominant device degradation under overvoltage switching. Such findings were obtained from a high-frequency, repetitive, unclamped inductive switching (UIS) test with active temperature control and accurate in-situ RDS(on) monitoring. A physics-based model was proposed to correlate the dynamic RDS(on) drift with the peak overvoltage, and a good agreement with experimental data was achieved. This model was further used to project the lifetime of GaN HEMTs. For 100 V rated GaN HEMTs switched under 100 kHz and 120 V spikes, the model projects less than 10% dynamic RDS(on) shift over 25 years of continuous operation. This work addresses the major concerns of overvoltage switching reliability of GaN HEMTs and provides new insights of the electron trapping mechanism.

IEEE Xplore
Ruizhe Zhang, Ricardo Garcia, Robert Strittmatter, Yuhao zhang, Shengke Zhange
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宜普发声明称其氮化镓功率器件供货不受影响

宜普发声明称其氮化镓功率器件供货不受影响

2023年7月3日中国商务部宣布8月起对镓、锗相关物项的出口实施管制。宜普电源转换公司的晶圆技术是硅基氮化镓,尽管每个器件中有其微量镓含量,相对全球镓来源广泛,宜普的需求相对较小。我们预计不会出现短期或长期的供应中断。

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利用单片氮化镓集成电路设计解决方案以实现更高性能、缩小尺寸和降低成本

利用单片氮化镓集成电路设计解决方案以实现更高性能、缩小尺寸和降低成本

事实证明,15 V ~ 350 V 氮化镓异质结场效应功率晶体管在功率转换、电机驱动和激光雷达等应用中,无论是在效率、尺寸、速度和成本方面都比硅器件更具优势 。氮化镓集成电路为许多高频应用提供了多方面的系统级优势。 氮化镓集成电路才刚刚发展,其优势肯定会随着其技术发展而不断增强。

Bodo’s Power Systems
2023年6月
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基于氮化镓器件的功率转换解决方案着眼于下一代应用

基于氮化镓器件的功率转换解决方案着眼于下一代应用

宜普电源转换公司(EPC)是增强型氮化镓 (GaN) FET 和 IC产品的领导者,在纽伦堡举行的 PCIM Europe 2023展会上分享了关于氮化镓技术的发展和其应用的演示。 我们与该公司的联合创始人兼首席执行官 Alex Lidow 就电力电子行业和氮化镓技术对行业的影响进行了深度交流。

Electronic Design
2023年5月
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Podcast: EPC’s Progress in GaN Reliability in RadHard and New Space Applications

Podcast: EPC’s Progress in GaN Reliability in RadHard and New Space Applications

In this episode of Spirit: Behind the Screen, Spirit Electronics CEO Marti McCurdy chats with EPC’s CEO Alex Lidow and Marketing Director Renee Yawger about the progress of GaN. They discuss GaN’s performance under high radiation as well as the extensive testing, failure modes and device lifespan detailed in EPC’s Phase 15 reliability report. With the full potential of GaN still to be explored and new EPC products releasing frequently, including new half-bridge drivers, low-side drivers and full power stage, GaN is especially useful in New Space and commercial space applications.

Spirit: Behind the Screen
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宜普电源转换公司在美国国际贸易委员会起诉竞争对手英诺赛科,要求保护新兴氮化镓(GaN)技术专利

宜普电源转换公司在美国国际贸易委员会起诉竞争对手英诺赛科,要求保护新兴氮化镓(GaN)技术专利

案例聚焦新一代替代硅技术

(加利福尼亚州,埃尔塞贡多)--氮化镓(GaN)技术的全球领导者宜普电源转换公司(Efficient Power Conversion Corporation, EPC)于今日向美国联邦法院和美国国际贸易委员会(U.S. International Trade Commission, ITC)提起诉讼,主张其基础专利组合中的四项专利受到英诺赛科(珠海)科技有限公司及其子公司(统称英诺赛科)侵犯。 这些专利涵盖了宜普公司独家的增强型氮化镓功率半导体器件的设计和制造工艺的核心环节。这些专利是创新技术,已成功将基于氮化镓的功率器件从一个研究项目,发展成为一个可大批量生产的替代硅产品。使用氮化镓器件的晶体管和集成电路,较使用硅基器件而言更高效,更小型,成本更低。

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