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Podcast: EPC’s Progress in GaN Reliability in RadHard and New Space Applications

Podcast: EPC’s Progress in GaN Reliability in RadHard and New Space Applications

In this episode of Spirit: Behind the Screen, Spirit Electronics CEO Marti McCurdy chats with EPC’s CEO Alex Lidow and Marketing Director Renee Yawger about the progress of GaN. They discuss GaN’s performance under high radiation as well as the extensive testing, failure modes and device lifespan detailed in EPC’s Phase 15 reliability report. With the full potential of GaN still to be explored and new EPC products releasing frequently, including new half-bridge drivers, low-side drivers and full power stage, GaN is especially useful in New Space and commercial space applications.

Spirit: Behind the Screen
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宜普电源转换公司在美国国际贸易委员会起诉竞争对手英诺赛科,要求保护新兴氮化镓(GaN)技术专利

宜普电源转换公司在美国国际贸易委员会起诉竞争对手英诺赛科,要求保护新兴氮化镓(GaN)技术专利

案例聚焦新一代替代硅技术

(加利福尼亚州,埃尔塞贡多)--氮化镓(GaN)技术的全球领导者宜普电源转换公司(Efficient Power Conversion Corporation, EPC)于今日向美国联邦法院和美国国际贸易委员会(U.S. International Trade Commission, ITC)提起诉讼,主张其基础专利组合中的四项专利受到英诺赛科(珠海)科技有限公司及其子公司(统称英诺赛科)侵犯。 这些专利涵盖了宜普公司独家的增强型氮化镓功率半导体器件的设计和制造工艺的核心环节。这些专利是创新技术,已成功将基于氮化镓的功率器件从一个研究项目,发展成为一个可大批量生产的替代硅产品。使用氮化镓器件的晶体管和集成电路,较使用硅基器件而言更高效,更小型,成本更低。

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EPC新推基于GaN FET的150 ARMS电机驱动器参考设计, 用于电动出行、叉车和大功率无人机

EPC新推基于GaN FET的150 ARMS电机驱动器参考设计, 用于电动出行、叉车和大功率无人机

基于氮化镓器件的EPC9186逆变器参考设计增强了高功率应用的电机系统性能、精度、扭矩和可实现更长的续航里程。

宜普电源转换公司(EPC)新推EPC9186,这是一款采用EPC2302 eGaN®FET的三相BLDC电机驱动逆变器。EPC9186支持14 V~ 80 V的宽输入直流电压。大功率EPC9186支持电动滑板车、小型电动汽车、农业机械、叉车和大功率无人机等应用。

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Test-to-Fail Methodology for Accurate Reliability and Lifetime Evaluation of eGaN Devices in Solar Applications

Test-to-Fail Methodology for Accurate Reliability and Lifetime Evaluation of eGaN Devices in Solar Applications

Modern solar panels are demanding increasingly higher power density and longer operating lifetimes. Solar applications including power optimizers and panels with built-in microinverters are becoming the prevailing trend for an increasing number of solar customers, where low voltage GaN power devices (VDS < 200 V) are extensively used.

Bodo’s Power Systems
May, 2023
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Growing GaN Ecosystem for BLDC Motor Drives

Growing GaN Ecosystem for BLDC Motor Drives

Gallium nitride (GaN) transistors and ICs have the best attributes to satisfy BLDC inverter needs. The superior switching capability of GaN helps to remove dead time and increase PWM frequency to obtain unmatched sinusoidal voltage and current waveforms for smoother, silent operation with higher system efficiency

Power Systems Design
May, 2023
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EPC GaN FET配以ADI控制器可实现最高功率密度稳压DC/DC转换器

EPC GaN FET配以ADI控制器可实现最高功率密度稳压DC/DC转换器

宜普电源转换公司(EPC)和Analog Devices(ADI)公司携手新推的参考设计采用经过全面优化的新型模拟控制器来驱动EPC的氮化镓场效应晶体管,可实现超过96.5%的效率。

宜普电源转换公司(EPC)宣布新推EPC9158,这是一款工作在500 kHz开关频率的双输出同步降压转换器参考设计,可将48 V~54 V的输入电压转换为12 V稳压输出,可提供高达每相25 A电流或50 A总连续电流。ADI的新型LTC7890同步氮化镓降压控制器与EPC的超高效GaN FET相结合,可为高功率密度应用提供占板面积小且非常高效的解决方案。该解决方案在48 V/12 V 、50 A连续电流下可实现 96.5%的效率。

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EPC GaN Experts to Showcase Latest Generation Power Semiconductors at PCIM Europe 2023

EPC GaN Experts to Showcase Latest Generation Power Semiconductors at PCIM Europe 2023

EPC’s GaN Experts will be available during PCIM Europe 2023, showcasing the latest generation of GaN FETs and ICs in a wide variety of real-world applications.

EL SEGUNDO, Calif. — April 2023 — — EPC, the world’s leader in enhancement-mode gallium nitride FETs and ICs,will be delivering multiple technical presentations on GaN technology and showcasing applications at PCIM Europe 2023 in Nuremburg, 09 – 11 May (see detailed schedule below). In addition, the company will demonstrate its latest eGaN® FETs and ICs in a large variety of customer end products in Hall 9, Stand 318.

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The EEcosystem Podcast: Dr. Alex Lidow: The Mind behind Power MOSFET and the Rise of GaN

The EEcosystem Podcast: Dr. Alex Lidow: The Mind behind Power MOSFET and the Rise of GaN

In this episode of The EEcosystem Podcast, our guest is Dr. Alex Lidow, CEO and co-founder of Efficient Power Conversion. In this episode, we will find out more about Alex and learn about MOSFETs and the rise of GaN. How did MOSFETs grow so quickly? What technologies are driving GaN adoptions and why. We will also discuss the potential obstacles to GaN adoption. This and many more questions will be answered as we go along! Listen to this episode to learn more!

April, 2023
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How to Integrate GaN Power Stages for Efficient Battery-Powered BLDC Motor Propulsion Systems

How to Integrate GaN Power Stages for Efficient Battery-Powered BLDC Motor Propulsion Systems

This article discusses the advantages of GaN-based power stages and introduces a sample device from EPC, implemented in a half-bridge topology. It explains how to use associated development kits to quickly get started on a project. In the process, designers will learn how to measure the parameters of a BLDC motor and operate it in sensorless field orientation control (FOC) with minimal programming effort using Microchip Technology’s motorBench Development Suite.

Digi-Key Electronics
April, 2023
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GaN Transistors Bring Newest Rad Hard Technology to Demanding Space Applications

GaN Transistors Bring Newest Rad Hard Technology to Demanding Space Applications

Efficient Power Conversion (EPC) expands its family of radiation-hardened (rad-hard) gallium nitride (GaN) products for power conversion solutions with two new devices rated at 100 V and 200 V to address a multitude of critical spaceborne and other high-reliability .

EL SEGUNDO, Calif.— April 2023 — EPC announces the introduction of two new radiation-hardened GaN FETs. The EPC7020 is a 200 V, 11 mΩ, 170 APulsed, rad-hard GaN FET in a small 12 mm2 footprint. The EPC7003 is a 100 V, 30 mΩ, 42 APulsed, rad-hard GaN FET in a tiny 1.87 mm2 footprint.  Both devices have a total dose radiation rating greater than 1,000K Rad(Si) and SEE immunity for LET of 83.7 MeV/mg/cm2 with VDS up to 100% of rated breakdown. These new devices, along with the rest of the Rad Hard family, EPC7019, EPC7014, EPC7004, EPC7018, EPC7007, are offered in a chip-scale package, the same as the commercial eGaN® FET and IC family.  Packaged versions will be available from EPC Space.

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EPC第十五阶段产品可靠性测试报告 根据实际应用经验,预测氮化镓器件寿命

EPC第十五阶段产品可靠性测试报告 根据实际应用经验,预测氮化镓器件寿命

宜普电源转换公司(EPC)发布第十五阶段产品可靠性测试报告,进一步丰富了关于氮化镓器件可靠性的知识库和展示了EPC eGaN产品的稳健耐用性已在实际应用中得到验证。

EPC宣布发布其第十五阶段产品可靠性测试报告,记录了持续使用测试器件至失效的方法,并针对太阳能优化器激光雷达传感器DC/DC转换器等实际应用,加入了具体的可靠性指标和预测数据。

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Power Steering with GaN ePower™ ICs

Power Steering with GaN ePower™ ICs

With Electronic Power Steering (EPS), the hydraulic system is replaced with an electric motor that aids the driver only when needed. Its digital assistance control can be modified online to adapt to driving conditions. There are, however, several design constraints to consider. One is that the driver does not want to lack the haptic feedback from the tires, especially when a vehicle is large, such as a truck. Other constraints are determined by safety regulations, particularly for automatic guided vehicles. These constraints require adopting an efficient, accurate and redundant system. Gallium nitride technology helps the designers in all these areas.

Power Electronics News
March, 2023
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Sharge Selects GaN FETs from EPC for High-power USB PD Charger

Sharge Selects GaN FETs from EPC for High-power USB PD Charger

EL SEGUNDO, Calif.—  March 2023 – Efficient Power Conversion (EPC), the world’s leader in enhancement-mode gallium nitride FETs and ICs, has teamed up with SHARGE Technology (SHARGE) to design a 67 W USB PD charger with a power display screen. The Retro 67 fast charger uses EPC’s 100 V GaN FET, EPC2218, which can deliver 231 A pulsed current in a tiny footprint of 3.5 mm x 1.95 mm offering designers a significantly smaller, more efficient device than silicon MOSFET for USB PD fast chargers.

EPC2218 provides SHARGE’s All-GaN fast charger with higher efficiency, state-of-the-art power density and lower system cost.

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Power Packaging for the GaN Generation of Power Conversion

Power Packaging for the GaN Generation of Power Conversion

Since the launch of GaN-on-Si enhancement mode power transistors in March 2010 there has been a slow but monotonic shift towards adoption and replacement of silicon-based power MOSFETs. Initial adoption came from risk-taker visionaries in applications such as lidar, high-end audio amplifiers, robots, vehicle headlamps, and high-performance DC-DC converters. For the expansion of GaN for power conversion to get beyond the early adopters, a more user-friendly format than the WLCP needed to be developed. This format, however, needed to preserve the key attributes of small size, low RDS(on), high speed, excellent thermal conductivity, and low cost. In other words, the best package would be the least amount of package technically possible. Enter the PQFN…

Bodo’s Power Systems
March, 2023
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GaN-based Design of a 2 kW 48 V/12 V Bi-directional Power Module for 48 V Mild Hybrid Electric Vehicles

GaN-based Design of a 2 kW 48 V/12 V Bi-directional Power Module for 48 V Mild Hybrid Electric Vehicles

With the increase in government mandates to combat climate change, automakers are moving quickly to leverage new technology to respond by switching from the internal combustion engine to electric-drive vehicles. This article presents the design of a 2 kW, two-phase 48 V/12 V bi-directional converter using GaN FETs that achieves 96% efficiency and is targeted for the 48 V mild hybrid system.

PSD North America
March, 2023
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欢迎莅临APEC 2023展览会与GaN专家会面 以了解最新一代功率半导体如何针对各业界需求,实现最佳功率密度

欢迎莅临APEC 2023展览会与GaN专家会面 以了解最新一代功率半导体如何针对各业界需求,实现最佳功率密度

EPC的GaN专家将在其APEC展位展示各种应用所采用的最新一代GaN FET 和 IC。

宜普电源转换公司(EPC)是增强型氮化镓FET和IC领域的全球领导者,将于3月19日至23日在奥兰多举行的IEEE APEC 2023会议上发表多项技术演讲,详情请参阅下方时间表。此外,我们还会在奥兰治县会议中心的732号展位展示最新一代的 eGaN®FET和IC,其应用范围包括高功率密度计算电动汽车机器人太阳能、电池充电等。欢迎莅临参观“GaN之墙”,我们提供市场上最广泛的氮化镓功率半导体产品组合,可现成交付。

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面向USB PD 3.1应用,EPC新推基于eGaN IC的 高功率密度、薄型DC/DC转换器参考设计

面向USB PD 3.1应用,EPC新推基于eGaN IC的 高功率密度、薄型DC/DC转换器参考设计

EPC推出EPC9177,这是一种基于eGaN®IC的高功率密度、薄型DC/DC转换器参考设计,可满足新型USB PD 3.1对多端口充电器和主板上从28 V~48 V输入电压转换至12 V或20 V输出电压的严格要求。

宜普电源转换公司(EPC)宣布推出EPC9177,这是一款数字控制、单输出同步降压转换器参考设计,工作在 720 kHz 开关频率,可转换 48 V、36 V、28 V至稳压12 V输出电压,并提供可高达20 A的连续输出电流。

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EPC Presents Sixth eGaN Generation

EPC Presents Sixth eGaN Generation

Five times smaller than an equivalent silicon MOSFET and twice as powerful as the previous generation of eGaN devices is the new sixth generation of devices introduced by Efficient Power Conversion (EPC). We asked CEO Alex Lidow in the video.

Electroniknet.de
November 29, 2022
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