宜普电源转换公司(EPC)推出 200 V、10 mΩ的EPC2307，完善了额定电压为 100V、150 V和200 V的6个GaN晶体管系列，提供更高的性能、更小的解决方案和易于设计的DC/DC 转换、AC/DC SMPS和充电器、太阳能优化器和微型逆变器，以及电机驱动器。

全球增强型氮化镓FET和IC领导者EPC推出 200 V、10 mΩ的EPC2307，采用耐热增强型QFN封装，占位面积仅为3 mm x 5 mm。

An exploration of a GaN-based design of a 2 kW 48V/12V bi-directional power module for 48 V mild hybrid electric vehicles.

Electronics Today
January, 2023
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This panel discussion from Electronica 2022 discusses the benefits and challenges for SiC and GaN in multiple application contexts, as well as the last barriers to overcome for widespread adoption, such as large-volume capabilities and prices.

Power Electronic News
January, 2023
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EPC推出 80 V、通过AEC-Q101 认证的氮化镓场效应晶体管（GaN FET）EPC2252，为设计人员提供比硅 MOSFET 更小和更高效的解决方案，用于车规级激光雷达、48 V/12 V DC/DC转换和低电感电机驱动器。

作为增强型氮化镓 (eGaN^®) FET 和 IC 的全球领导者，宜普电源转换公司（EPC）进一步扩大已有现货供应的车规级氮化镓晶体管系列，推出80 V、11 mΩ、在 1.5 mm x 1.5 mm 封装内提供 75 A 脉冲电流的EPC2252，比硅MOSFET更小和更高效，适用于自动驾驶和其他先进驾驶辅助系统应用中的车规级激光雷达、48 V/12 V DC/DC转换和低电感电机驱动器。

Aiming at laser time-of-flight lidar, Efficient Power Conversion (EPC) has introduced an 80V 15A pulse laser driver IC.

Electronics Weekly
January, 2023
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宜普电源转换公司(EPC)推出新型氮化镓集成电路EPC21701，这是一款80 V激光驱动器 IC，可提供15 A脉冲电流，适用于飞行时间(ToF)激光雷达应用，包括真空吸尘器、机器人、3D安全摄像头和3D传感。

EPC宣布推出EPC21701，这是一款单芯片激光驱动器，包含80 V、40 A FET、栅极驱动器和3.3逻辑电平输入，用于飞行时间激光雷达系统，包括用于机器人、监控系统和真空吸尘器。它专为用于手势识别、飞行时间 (ToF) 测量、机器人视觉或工业安全的激光雷达系统量身定制。

宜普电源转换公司（EPC）和立锜科技（Richtek）携手推出新型快充参考设计，使用RT6190降压-升压控制器和氮化镓场效应晶体管EPC2204，可实现超过98%的效率。

宜普电源转换公司和立锜科技宣布推出4开关双向降压-升压控制器参考设计，可将12 V~24 V的输入电压转换为5 V~20 V的稳压输出电压，并提供高达5 A的连续电流和6.5 A的最大电流。与高功率密度应用的传统解决方案相比，新型RT6190控制器与EPC的超高效氮化镓场效应晶体管EPC2204相结合，使得解决方案尺寸可缩小20%以上，而且在20 V和12 V输出电压下，可实现超过98%的效率。在不需使用散热器和5 A连续电流下，20 V转5 V的最大升温低于摄氏15度，而12 V转20 V的最高升温则低于摄氏55度。

Richtek, the global leading analog IC design company has teamed up with EPC, the leading provider of gallium nitride (GaN)-based power management technology to launch a new reference design for fast charging applications, achieving high power density and up to 98% efficiency.

DigiTimes
January, 2023
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Power-conversion technologies are experiencing the first tectonic shift since the move from bipolar to MOS. That shift, of course, is due to the viral adoption of wide-bandgap power devices. At this point, GaN is more than a specialty technology; it is a broad-scale replacement for silicon MOSFETs in applications ranging from 30 V up to 650 V — a multibillion-dollar market.

Power Electronics News
December, 2022
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Efficient Power Conversion (EPC) introduces the 150 V, 3 mΩ EPC2305 and the 200 V, 5 mΩ EPC2304 GaN FETs offering higher performance and smaller solution size and cost for DC-DC conversion, AC/DC SMPS and chargers, solar optimizers and microinverters, and motor drives.

EL SEGUNDO, Calif.— December 2022 — EPC, the world’s leader in enhancement-mode gallium nitride FETs and ICs, introduces the 150 V, 3 mΩ EPC2305 and the 200 V, 5 mΩ EPC2304 GaN FETs in a thermally enhanced QFN package with exposed top and tiny 3 mm x 5 mm footprint.

Despite the continued progress in traditional transistor scaling, the semiconductor industry has reached an inflection point. The demand for faster, smaller, smarter, and more energy-efficient chips calls for new design and manufacturing paradigms. This eBook includes contributions from technology and market experts Malcolm Penn, Future Horizons; Tim Burgess and Bernd Westhoff, Renesas Electronics; Jean-Christophe Eloy, Yole Group; Luc Van den hove, imec; Ezgi Dogmus, Poshun Chiu, and Taha Ayari, Yole Intelligence; Alex Lidow, Efficient Power Conversion; Victor Veliadis, PowerAmerica; Richard Collins and Yu-Han Chang, IDTechEx; and Jean-René Lèquepeys, CEA-Leti.

EETimes
December, 2022
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Growing computational power and miniaturization of electronics in computing and data centers is increasingly putting pressure on 48-V power delivery and conversion systems. High-efficiency and high-power–density converters enable a reduction in power losses at the system level while allowing smaller form factors. In this context, LLC resonant topologies combined with GaN technology succeed to deliver outstanding performance, as it has been demonstrated with multiple examples. This article will show the key design parameters and components to achieve beyond 4 kW/in3 of power density in a 48-V to 12-V LLC converter using eGaN^® FETs.

Power Electronics News
December, 2022
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EPC introduces two new 80 V AEC-Q101 qualified GaN FETs, offering designers significantly smaller and more efficient solutions than silicon MOSFETs for automotive 48 V- 12 V DC-DC conversion, infotainment, and lidar for autonomous driving.

EL SEGUNDO, Calif. — November 2022 — Efficient Power Conversion Corporation, the world’s leader in enhancement-mode gallium nitride (eGaN^®) FETs and ICs, expands the selection of automotive, off-the-shelf gallium nitride transistors with the introduction of 80 V, 6 mΩ EPC2204A that delivers 125 A pulsed current in a 2.5 mm x 1.5 mm footprint and the 80 V, 3.2 mΩ EPC2218A that delivers 231 A pulsed current is a 3.5 mm x 1.95 mm footprint, offering designers significantly smaller and more efficient devices than silicon MOSFETs for automotive DC-DC for 48V-12V conversion, infotainment, and lidar for autonomous driving.

Efficient Power Conversion (EPC) strengthens market leadership in gallium nitride power conversion by adding significant 8-inch manufacturing capacities in collaboration with Vanguard International Semiconductor Corporation (VIS).

EL SEGUNDO, Calif.— December 6, 2022 — EPC, the world’s leader in gallium nitride (GaN) power FETs and integrated circuits (ICs), and Vanguard International Semiconductor Corporation (VIS), a leading specialty IC foundry service provider, today jointly announced a multi-year production agreement to produce gallium nitride-based power semiconductors. EPC will utilize VIS’ 8-inch (200 mm) wafer fabrication capabilities, significantly increasing manufacturing capacities for EPC’s high-performance GaN transistors and integrated circuits. Manufacturing will commence in early 2023.

Continue the conversation with Guy Moxey and EPC CEO and Co-Founder Alex Lidow as they explore how GaN and Wolfspeed Silicon Carbide are changing the way we live, and where the future of these technologies could take us.

Wolfspeed
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This paper deals with the application of the latest generation low voltage (up to 80 V) Gallium Nitride (GaN) devices for motor drive applications in the field of electric micro-mobility. A two-level inverter topology oriented to light electric traction (such as electric scooters) with a power rate of 1500 W has been considered. An experimental board using two GaN FETs in parallel connection for each switch of an inverter leg has been arranged. The intrinsic parameters spread of the device, as well as the leakage inductances of both the circuit and the PCB, to evaluate the impact on the current share during both the transient phase and in the steady state have been investigated. In the paper, several simulation runs have been carried out and described. Furthermore, the inverter experimental board has been used to evaluate the phase voltages and currents at different load conditions. Finally, the temperature limits versus phase current variation have been evaluated.

IEEE 2022 AEIT International Annual Conference (AEIT)
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In this interview from electronica 2022, Alex Lidow talks about technology during these 50 years of EE Times, the next challenges for our industry, and the growth of GaN. “Below 650 volts, where the MOSFET is dominant that will be written over by GaN”.

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GaN power devices should be the ideal choice for power conversion applications in space because they are more robust than rad hard MOSFETs when exposed to various forms of radiation. The electrical and thermal performance of GaN has also demonstrated superior operation in a space environment. In this podcast, Bel Lazar, Chief Executive Officer of EPC Space, will analyze the importance of GaN for the space industry. In addition to his role as CEO of EPC Space, Bel currently serves as COO of Efficient Power Conversion (EPC).

EETimes
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In this article EPC explains the improved performance in their Gen 6 GaN FETs and how the resulting devices can achieve the same R_DS(on) as previous generation devices in die that are half the size.

How2Power
November, 2022
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Efficient Power Conversion (EPC) introduces the 80 V, 4 mOhm EPC2619 GaN FET in tiny 1.5 mm x 2.5 mm footprint, offering higher performance and smaller solution size than traditional MOSFETs for high power density applications, including DC-DC conversion, motor drives, and synchronous rectification for 12 V – 20 V.

EL SEGUNDO, Calif.— November 2022 — EPC, the world’s leader in enhancement-mode gallium nitride (GaN) power FETs and ICs, launches the 80 V, 4 mOhm EPC2619. This is the lead product for a new generation of eGaN devices that have double the power density compared to EPC’s prior-generation products.