EPC’s mission is to make GaN power devices that are higher performance and lower cost compared to silicon. GaN devices increase power density, improve efficiency and enable new applications and with the rising cost of energy globally, it is no surprise that the adoption rate of our GaN devices is accelerating dramatically.

Bodo’s Power Systems
November, 2022
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As energy efficiency standards increase, high-voltage Silicon Carbide and low-voltage GaN are replacing traditional silicon, enabling cooler, lighter, and more powerful electronics. Join Guy Moxey and Alex Lidow, EPC CEO and Co-founder, and explore how Wolfspeed and EPC technologies complement one another in the race towards a more sustainable future.

Wolfspeed
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GaN FETs help Solarnative achieve industry-leading power density for solar microinverters, enabling module frame integration to solve the challenges of solar power installation.

EL SEGUNDO, Calif.— November 2022 Solarnative uses GaN devices in its new microinverter to achieve industry-best power density.  The Power Stick is the smallest inverter in the world, with dimensions of 23.9 by 23,2 by 404 millimeters. With an AC output power of 350 W, the volume of 0.19 liters corresponds to a power density of 1.6 kW per liter. By comparison, the IQ 7A microinverter from a market leading supplier delivers 349 watts with a volume of 1.12 liters, corresponding to 0.31 kW per liter – not even one-fifth of the Solarnative device. Despite the extreme size reduction, the European efficiencies are quite comparable, at 96.0 percent for the Power Stick and 96.5 percent for the IQ 7A.

With increasing legislation aimed at higher fuel efficiency standards, vehicle manufacturers are searching for cost-effective solutions to meet these demands while still providing the power required for ever-increasing electronically driven functions.  This article details a bi-directional high power converter for mild-hybrid cars and battery backup units using GaN FETs to achieve efficiency exceeding 96% when converting from 48 V to 14.3 V at 500 kHz switching frequency.

Power Electronics Europe
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From Nov. 15 to 18, electronica 2022 will bring the international electronics industry together at the Munich exhibition grounds. Wide Bandgap Semiconductors, Renewable Energies, Smart Grid, and Energy Storage will be the major topics covered by the Power Electronics Forum at electronica 2022. In this podcast, onsemi president and CEO Hassane El-Khoury, Silanna Semiconductor North America CEO Mark Drucker, and of Efficient Power Conversion (EPC) CEO Alex Lidow will introduce the Power Electronics Forum. Interview with Alex Lidow starts at 31:55

EETimes
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GaN devices have gone from initial R&D to mainstream designs over the last 15 years. Unfortunately, there are many misunderstandings left-over from those early-stage bipolar drive circuit developments or dead-end technology branches. One of the most pernicious is the topic of bipolar drive. In actuality, unipolar drives are the best way to drive eGaN^® FETs.

Power Electronics Tips
October, 2022
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宜普电源转换公司(EPC)推出150 V、6 mΩ EPC2308 GaN FET，让高功率密度应用实现更高的性能和更小的解决方案，包括DC/DC转换、AC/DC SMPS和充电器、太阳能优化器和微型逆变器，以及电机驱动器。

EPC 是增强型氮化镓(eGaN®)功率FET和 IC 领域的全球领导者，新推采用更耐热的QFN封装且可立即发货的150 V EPC2308氮化镓器件，用于电动工具和机器人的电机驱动器、用于工业应用的80 V/100 V高功率密度DC/DC转换器、用于充电器、适配器和电源供电的28V~54V同步整流器、智能手机USB快速充电器，以及太阳能优化器和微型逆变器。

Gallium nitride devices are leading the innovation in power conversion. The benefits of GaN-based inverters are becoming increasingly evident in motor drive applications.

Power Electronics News
October, 2022
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As the level of automation increases in machines, detailed awareness of the surroundings becomes necessary. Time-of-flight based 3D imaging systems have become the eyes of machines. eGaN^® technology has been the workhorse of laser drivers for these systems, enabling the resolution to make intelligent decisions.

Bodo’s Power Systems
October, 2022
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EPC9176是一款基于氮化镓器件的逆变器参考设计，增强了电机驱动系统的性能、续航能力、精度和扭矩，同时简化设计。该逆变器尺寸极小，可集成到电机外壳中，从而实现最低的EMI、最高的功率密度和最轻盈。

宜普电源转换公司（EPC）宣布推出EPC9176（EPC）宣布推出EPC23102EPC23102 ePower™ 功率级GaN IC，内含栅极驱动器功能和两个具有5.2 mΩ典型导通电阻的GaN FET。EPC9176在20 V和80 V之间的输入电源电压下工作，可提供高达28 A_pk(20 A_RMS)的电流。这种电压范围和功率使该解决方案非常适合用于各种36V~80 V输入的三相BLDC电机驱动应用，包括电动自行车、电动滑板车、电动工具、无人机、机器人、直流伺服、医疗机器人和工厂自动化。

In this article, different power loop layouts are analyzed with simultaneous considerations for thermal management and electric parasitics.

The results show that an improved layout can provide a significant reduction in operating temperature rise while maintaining electrical performance benefits.

EE Power
October, 2022
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The development of gallium nitride technology has ushered in a new age for power electronics. The greater bandgap, critical field, and electron mobility are the three factors that affect GaN technology the most. To concentrate on expanding motor drive applications based on GaN technology in the e-mobility, robotics, drone, and industrial automation areas, EPC has opened a new design application center close to Turin, Italy.

EE Times Europe
September, 2022
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Alex Lidow, former CEO of International Rectifier and CEO of Efficient Power Conversion, is one of the few individuals to have pioneered two revolutionary power semiconductor technologies – the silicon power MOSFET and the gallium nitride HEMT. How did he come to have these two unique opportunities?

elektroniknet.de
September, 2022
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There is a commonly held belief in the industry that GaN devices are wasted on inverters for electric motors. After all, if the performance of the system is restricted by the use of a 20KHz PWM, then there can be little benefit in using a material that gains the majority of its advantages from faster switching speeds. However, according to Marco Palma, Director of Motor Drives Systems and Applications at EPC, there are some ways that GaN can still prove effective in that role.

Power Systems Design
September, 2022
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EPC’s inverter reference design is based around a GaN chip to reduce powertrain sizes

E-mobility Engineering
September, 2022
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New Motor Drive Center of Excellence (CoE) design center in Turin, Italy, to help customers exploit the power of GaN for growing motor drive applications

EL SEGUNDO, Calif.— September, 2022 —   EPC has opened a new design application center near Turin, Italy, to focus on growing motor drive applications based on GaN technology in the e-mobility, robotics, drones, and industrial automation markets.  The specialist team will support customers in accelerating their design cycles and define future Integrated Circuits for power management with state-of-the art equipment to test applications from 400 W to 10’s of kW.

GaN FETs in thermally enhanced QFN packages offer higher performance and smaller solution size for high power density applications, including DC-DC conversion, AC/DC chargers, solar optimizers and microinverters, motor drives, and Class D Audio

Power Electronics News
September, 2022
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宜普电源转换公司(EPC)新推100 V、3.8 mΩ 的氮化镓场效应晶体管EPC2306，为高功率密度应用提供性能更高和更小的解决方案，包括 DC/DC 转换、AC/DC 充电器、太阳能优化器和微型逆变器、电机驱动器和D类音频放大器等应用。

宜普电源转换公司是增强型氮化镓(eGaN^®)功率FET和IC领域的全球领导者，新推100 V、采用耐热增强型QFN封装的EPC2306，用于高密度计算应用的48 V DC/DC转换、电动汽车和机器人的48 V BLDC 电机驱动器、太阳能优化器和微型逆变器，以及 D 类音频放大器。

BRC Solar公司的新型M500/14功率优化器采用EPC公司的100 V 氮化镓器件（EPC2218)，它的占板面积小，可实现更高的频率和额定功率。

BRC Solar公司凭借其功率优化器彻底改变了光伏市场的发展、提高了光伏电站和系统的发电量和性能。其新一代M500/14 功率优化器采用了宜普电源转换公司的EPC2218（100 V的场效应晶体管），实现了更高的功率密度，因为GaN FET的低功耗和小尺寸使关键负载电路更加紧凑。而GaN FET的小寄生电容和电感可实现没有杂讯的开关和良好的EMI特性。GaN FET的另一个优点是没有反向恢复损耗。

宜普电源转换公司（EPC）推出ePower™功率级集成电路，它集成了整个半桥功率级，可在1 MHz工作时实现高达35 A的输出电流，为高功率密度应用提供更高的性能和更小型化的解决方案，包括DC/DC转换、电机驱动和D类音频放大器等应用。

宜普电源转换公司（EPC）宣布推出100 V、35 A的集成电路，专为48 V DC/DC转换而设计，用于高密度计算应用和面向电动汽车、机器人和无人机的48 V BLDC电机驱动器。

EPC23102 eGaN集成电路可实现100 V的最大耐受电压、实现高达35 A的负载电流和高于1 MHz的开关速度。