In this installment of the ‘How to GaN’ series we will discuss a new family of eGaN FETs that is keeping Moore’s Law alive with significant gains in key switching figures of merit that widen the performance gap with the power MOFET in high frequency power conversion.

EEWeb
By: Alex Lidow
October, 2014

One yardstick to compare enhancement mode GaN (eGaN) power devices with state-of-the-art silicon MOSFETs is FOM. However, beyond these pure mathematical numbers, there are other device and package related parameters that significantly influence in-circuit performance.

By Johan Strydom PHD, Director of Application Engineering, EPC
Power Electronics Technology
September 1, 2010

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