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氮化镓(GaN)集成电路重新定义功率转换

氮化镓(GaN)集成电路重新定义功率转换

氮化镓技术发展迅速,在开发出多代全新分立器件后,具备更高效、更小尺寸和成本更低等优势的新世代集成电路继续崛起。氮化镓集成电路让产品可以更小型化、开关更快、更高效且更易于设计。

Power Systems Design
2021年3月 (第36-39页)
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EPC’s ePower Stage EPC2152 Integrated Circuit Named Finalist in Prestigious Elektra Awards

EPC’s ePower Stage EPC2152 Integrated Circuit Named Finalist in Prestigious Elektra Awards

EPC’s ePower™ Stage EPC2152 Integrated Circuit has been selected as a finalist in the Semiconductor Product of the Year – Analogue category, in this year’s Elektra Awards.  These prestigious annual awards have been running for over 19 years to reward and recognize companies and individuals for their excellent performance, innovation and contribution to the global electronics industry.

Companies are invited to enter individual categories and must demonstrate how innovative their product is, how it addresses its intended application better than incumbent products and what additional applications or markets could be opened-up.  Judging is carried out by an independently and unbiased, diverse, and knowledgeable panel of industry experts.  Due to the current COVID restrictions the Elektra Awards ceremony this year will be held virtually on 25th March and the winners announced during the event.

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宜普电源转换公司的单片式eGaN半桥晶体管系列 荣获《Electronic Products》杂志颁发 2014年「年度产品大奖」

宜普电源转换公司的单片式eGaN半桥晶体管系列 荣获《Electronic Products》杂志颁发 2014年「年度产品大奖」

单晶片半桥式氮化镓功率晶体管EPC2100获得著名电子杂志颁发「年度产品大奖」,在竞争激烈的分立式半导体产品类别中被评选为极具创新性的产品。

宜普电源转换公司(EPC)的单片半桥式硅基氮化镓(eGaN®)功率晶体管荣获《Electronic Products》杂志颁发2014年「年度产品大奖」。

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宜普电源转换公司推出专为大电流及具高降压比转换器应用而设的开发板

EPC9016开发板内含40 V增强型氮化镓场效应晶体管(eGaN®FET),是一种25 A最大输出电流并采用并联配置的电路设计,可提高电流能力达67%,其最优版图技术可实现最优化效率。

宜普电源转换公司宣布推出EPC9016采用半桥式配置的开发板,专为采用氮化镓场效应晶体管的大电流、高降压比、降压中间总线转换器(IBC)应用而设。与采用单一高侧(控制)场效应晶体管相比,我们并联了两个低侧(同步整流器)场效应晶体管使得传导时间更长。

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How To GaN: Paralleling High Speed eGaN FETS for High Current Applications

This column evaluated the ability to parallel eGaN® FETs for higher output current applications by addressing the challenges facing paralleling high speed, low parasitic devices, and demonstrated an improved paralleling technique. For experimental verification of this design method, four parallel half bridges in an optimized layout were operated as a 48 V to 12 V, 480 W, 300 kHz, 40 A buck converter, and achieved efficiencies above 96.5%, from 35% to 100% load. The design method achieved superior electrical and thermal performance compared to conventional paralleling methods and demonstrated that high speed GaN devices can be effectively paralleled for higher current operation.

EEWeb
By: Alex Lidow
April, 2014

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