Power semiconductors are used across many areas of e-mobility, with different technologies suitable for each part of a vehicle, depending on the voltage and current requirements, while emerging tech is allowing smaller systems to be implemented. With GaN and SiC technologies maturing and coming down in price, adoption is growing, and the technologies are increasingly dominating the design and development of e-mobility powertrain and power systems.

E-Mobility Engineering
March 2024
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Gallium Nitride (GaN) FETs have revolutionized the power electronics industry, offering advantages such as smaller size, faster switching, higher efficiency, and lower costs compared to traditional silicon MOSFETs. However, the rapid evolution of GaN technology has sometimes outpaced the development of dedicated GaN-specific gate drivers and controllers. Consequently, circuit designers often turn to generic gate drivers designed for silicon MOSFETs, necessitating careful consideration of various factors to ensure optimal performance.

Bodo’s Power Systems
February, 2024
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宜普电源转换公司首席执行官兼共同创办人Alex Lidow表示，GaN的成本竞争力亦与Si MOSFET并驾齐驱，潜在爆发力更有过之而无不及，目前最关键就是得重塑诸多研究者的老旧观念，认为GaN昂贵到碰不得。GaN的技术正迎来转捩点，在先进运算、车用电子、太空电子及消费电子等新型应用设计多数采GaN技术，而非Si MOSFET……

DIGITIMES Asia
2023年9月
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宜普电源转换公司首席执行官兼共同创办人Alex Lidow接受DIGITIMES专访，提到GaN主要会被应用在650V及以下市场。反之碳化硅则是主导650V以上的市场，它可望取代硅基绝缘栅极双极性晶体管。宜普也在开发对速度及尺寸特性极为要求的400V以下市场。且致力于制造比Si功率元件拥有更高性能、更具成本竞争力的GaN元件。

DIGITIMES Asia
2023年9月
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事实证明，15 V ~ 350 V 氮化镓异质结场效应功率晶体管在功率转换、电机驱动和激光雷达等应用中，无论是在效率、尺寸、速度和成本方面都比硅器件更具优势 。氮化镓集成电路为许多高频应用提供了多方面的系统级优势。 氮化镓集成电路才刚刚发展，其优势肯定会随着其技术发展而不断增强。

Bodo’s Power Systems
2023年6月
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案例聚焦新一代替代硅技术

(加利福尼亚州，埃尔塞贡多）--氮化镓（GaN）技术的全球领导者宜普电源转换公司（Efficient Power Conversion Corporation, EPC）于今日向美国联邦法院和美国国际贸易委员会（U.S. International Trade Commission, ITC）提起诉讼，主张其基础专利组合中的四项专利受到英诺赛科（珠海）科技有限公司及其子公司（统称英诺赛科）侵犯。 这些专利涵盖了宜普公司独家的增强型氮化镓功率半导体器件的设计和制造工艺的核心环节。这些专利是创新技术，已成功将基于氮化镓的功率器件从一个研究项目，发展成为一个可大批量生产的替代硅产品。使用氮化镓器件的晶体管和集成电路，较使用硅基器件而言更高效，更小型，成本更低。

Since the launch of GaN-on-Si enhancement mode power transistors in March 2010 there has been a slow but monotonic shift towards adoption and replacement of silicon-based power MOSFETs. Initial adoption came from risk-taker visionaries in applications such as lidar, high-end audio amplifiers, robots, vehicle headlamps, and high-performance DC-DC converters. For the expansion of GaN for power conversion to get beyond the early adopters, a more user-friendly format than the WLCP needed to be developed. This format, however, needed to preserve the key attributes of small size, low RDS(on), high speed, excellent thermal conductivity, and low cost. In other words, the best package would be the least amount of package technically possible. Enter the PQFN…

Bodo’s Power Systems
March, 2023
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Five times smaller than an equivalent silicon MOSFET and twice as powerful as the previous generation of eGaN devices is the new sixth generation of devices introduced by Efficient Power Conversion (EPC). We asked CEO Alex Lidow in the video.

Electroniknet.de
November 29, 2022
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This panel discussion from Electronica 2022 discusses the benefits and challenges for SiC and GaN in multiple application contexts, as well as the last barriers to overcome for widespread adoption, such as large-volume capabilities and prices.

Power Electronic News
January, 2023
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EPC推出 80 V、通过AEC-Q101 认证的氮化镓场效应晶体管（GaN FET）EPC2252，为设计人员提供比硅 MOSFET 更小和更高效的解决方案，用于车规级激光雷达、48 V/12 V DC/DC转换和低电感电机驱动器。

作为增强型氮化镓 (eGaN^®) FET 和 IC 的全球领导者，宜普电源转换公司（EPC）进一步扩大已有现货供应的车规级氮化镓晶体管系列，推出80 V、11 mΩ、在 1.5 mm x 1.5 mm 封装内提供 75 A 脉冲电流的EPC2252，比硅MOSFET更小和更高效，适用于自动驾驶和其他先进驾驶辅助系统应用中的车规级激光雷达、48 V/12 V DC/DC转换和低电感电机驱动器。

Power-conversion technologies are experiencing the first tectonic shift since the move from bipolar to MOS. That shift, of course, is due to the viral adoption of wide-bandgap power devices. At this point, GaN is more than a specialty technology; it is a broad-scale replacement for silicon MOSFETs in applications ranging from 30 V up to 650 V — a multibillion-dollar market.

Power Electronics News
December, 2022
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Despite the continued progress in traditional transistor scaling, the semiconductor industry has reached an inflection point. The demand for faster, smaller, smarter, and more energy-efficient chips calls for new design and manufacturing paradigms. This eBook includes contributions from technology and market experts Malcolm Penn, Future Horizons; Tim Burgess and Bernd Westhoff, Renesas Electronics; Jean-Christophe Eloy, Yole Group; Luc Van den hove, imec; Ezgi Dogmus, Poshun Chiu, and Taha Ayari, Yole Intelligence; Alex Lidow, Efficient Power Conversion; Victor Veliadis, PowerAmerica; Richard Collins and Yu-Han Chang, IDTechEx; and Jean-René Lèquepeys, CEA-Leti.

EETimes
December, 2022
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Continue the conversation with Guy Moxey and EPC CEO and Co-Founder Alex Lidow as they explore how GaN and Wolfspeed Silicon Carbide are changing the way we live, and where the future of these technologies could take us.

Wolfspeed
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In this interview from electronica 2022, Alex Lidow talks about technology during these 50 years of EE Times, the next challenges for our industry, and the growth of GaN. “Below 650 volts, where the MOSFET is dominant that will be written over by GaN”.

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GaN power devices should be the ideal choice for power conversion applications in space because they are more robust than rad hard MOSFETs when exposed to various forms of radiation. The electrical and thermal performance of GaN has also demonstrated superior operation in a space environment. In this podcast, Bel Lazar, Chief Executive Officer of EPC Space, will analyze the importance of GaN for the space industry. In addition to his role as CEO of EPC Space, Bel currently serves as COO of Efficient Power Conversion (EPC).

EETimes
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Efficient Power Conversion (EPC) introduces the 80 V, 4 mOhm EPC2619 GaN FET in tiny 1.5 mm x 2.5 mm footprint, offering higher performance and smaller solution size than traditional MOSFETs for high power density applications, including DC-DC conversion, motor drives, and synchronous rectification for 12 V – 20 V.

EL SEGUNDO, Calif.— November 2022 — EPC, the world’s leader in enhancement-mode gallium nitride (GaN) power FETs and ICs, launches the 80 V, 4 mOhm EPC2619. This is the lead product for a new generation of eGaN devices that have double the power density compared to EPC’s prior-generation products.

As energy efficiency standards increase, high-voltage Silicon Carbide and low-voltage GaN are replacing traditional silicon, enabling cooler, lighter, and more powerful electronics. Join Guy Moxey and Alex Lidow, EPC CEO and Co-founder, and explore how Wolfspeed and EPC technologies complement one another in the race towards a more sustainable future.

Wolfspeed
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From Nov. 15 to 18, electronica 2022 will bring the international electronics industry together at the Munich exhibition grounds. Wide Bandgap Semiconductors, Renewable Energies, Smart Grid, and Energy Storage will be the major topics covered by the Power Electronics Forum at electronica 2022. In this podcast, onsemi president and CEO Hassane El-Khoury, Silanna Semiconductor North America CEO Mark Drucker, and of Efficient Power Conversion (EPC) CEO Alex Lidow will introduce the Power Electronics Forum. Interview with Alex Lidow starts at 31:55

EETimes
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Alex Lidow, former CEO of International Rectifier and CEO of Efficient Power Conversion, is one of the few individuals to have pioneered two revolutionary power semiconductor technologies – the silicon power MOSFET and the gallium nitride HEMT. How did he come to have these two unique opportunities?

elektroniknet.de
September, 2022
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There is a commonly held belief in the industry that GaN devices are wasted on inverters for electric motors. After all, if the performance of the system is restricted by the use of a 20KHz PWM, then there can be little benefit in using a material that gains the majority of its advantages from faster switching speeds. However, according to Marco Palma, Director of Motor Drives Systems and Applications at EPC, there are some ways that GaN can still prove effective in that role.

Power Systems Design
September, 2022
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