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Forecasting System Reliability in Real-World Mission Profiles in EPC’s Phase 16 Report on GaN Reliability

Forecasting System Reliability in Real-World Mission Profiles in EPC’s Phase 16 Report on GaN Reliability

Efficient Power Conversion (EPC) publishes Phase-16 Reliability Report adding new findings to the extensive knowledge base on GaN reliability and mission robustness.

EL SEGUNDO, Calif.— March 2024 — EPC announces the publication of its Phase-16 Reliability Report, documenting continued work using test-to-fail methodology and adding specific guidelines for overvoltage specifications and improving thermo-mechanical reliability.

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40 V Rad Hard GaN FETs Set New Performance Standards for Demanding Space Applications

40 V Rad Hard GaN FETs Set New Performance Standards for Demanding Space Applications

Efficient Power Conversion (EPC) expands its family of radiation-hardened (rad-hard) gallium nitride (GaN) products for power conversion solutions with two new 40 V devices rated at 62 A and 250 A to address critical spaceborne and other high-reliability applications.

EL SEGUNDO, Calif.— July 2023 — EPC announces the introduction of two new 40 V rated radiation-hardened GaN FETs.EPC7001 is a 40 V, 4 mΩ, 250 APulsed, rad-hard GaN FET in a small 7 mm2 footprint. EPC7002 is a 40 V, 14.5 mΩ, 62 APulsed, rad-hard GaN FET in a tiny 1.87 mm2 footprint.  Both devices have a total dose radiation rating greater than 1,000K Rad(Si) and SEE immunity for LET of 83.7 MeV/mg/cm2 with VDS up to 100% of rated breakdown. These new devices, along with the rest of the Rad Hard family, are offered in a chip-scale package.  Packaged versions are available from EPC Space.

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GaN Transistors Bring Newest Rad Hard Technology to Demanding Space Applications

GaN Transistors Bring Newest Rad Hard Technology to Demanding Space Applications

Efficient Power Conversion (EPC) expands its family of radiation-hardened (rad-hard) gallium nitride (GaN) products for power conversion solutions with two new devices rated at 100 V and 200 V to address a multitude of critical spaceborne and other high-reliability .

EL SEGUNDO, Calif.— April 2023 — EPC announces the introduction of two new radiation-hardened GaN FETs. The EPC7020 is a 200 V, 11 mΩ, 170 APulsed, rad-hard GaN FET in a small 12 mm2 footprint. The EPC7003 is a 100 V, 30 mΩ, 42 APulsed, rad-hard GaN FET in a tiny 1.87 mm2 footprint.  Both devices have a total dose radiation rating greater than 1,000K Rad(Si) and SEE immunity for LET of 83.7 MeV/mg/cm2 with VDS up to 100% of rated breakdown. These new devices, along with the rest of the Rad Hard family, EPC7019, EPC7014, EPC7004, EPC7018, EPC7007, are offered in a chip-scale package, the same as the commercial eGaN® FET and IC family.  Packaged versions will be available from EPC Space.

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EPC第十五阶段产品可靠性测试报告 根据实际应用经验,预测氮化镓器件寿命

EPC第十五阶段产品可靠性测试报告 根据实际应用经验,预测氮化镓器件寿命

宜普电源转换公司(EPC)发布第十五阶段产品可靠性测试报告,进一步丰富了关于氮化镓器件可靠性的知识库和展示了EPC eGaN产品的稳健耐用性已在实际应用中得到验证。

EPC宣布发布其第十五阶段产品可靠性测试报告,记录了持续使用测试器件至失效的方法,并针对太阳能优化器激光雷达传感器DC/DC转换器等实际应用,加入了具体的可靠性指标和预测数据。

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采用EPC新型车规级GaN FET设计更高分辨率激光雷达系统 以实现更先进的自主式系统

采用EPC新型车规级GaN FET设计更高分辨率激光雷达系统 以实现更先进的自主式系统

EPC推出 80 V、通过AEC-Q101 认证的氮化镓场效应晶体管(GaN FET)EPC2252,为设计人员提供比硅 MOSFET 更小和更高效的解决方案,用于车规级激光雷达、48 V/12 V DC/DC转换和低电感电机驱动器。

作为增强型氮化镓 (eGaN®) FET 和 IC 的全球领导者,宜普电源转换公司(EPC)进一步扩大已有现货供应的车规级氮化镓晶体管系列,推出80 V、11 mΩ、在 1.5 mm x 1.5 mm 封装内提供 75 A 脉冲电流的EPC2252,比硅MOSFET更小和更高效,适用于自动驾驶和其他先进驾驶辅助系统应用中的车规级激光雷达、48 V/12 V DC/DC转换和低电感电机驱动器。

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新型80 V、15 A eToF™激光驱动器GaN IC 可实现更高功率密度和更具成本效益的激光雷达系统设计

新型80 V、15 A eToF™激光驱动器GaN IC 可实现更高功率密度和更具成本效益的激光雷达系统设计

宜普电源转换公司(EPC)推出新型氮化镓集成电路EPC21701,这是一款80 V激光驱动器 IC,可提供15 A脉冲电流,适用于飞行时间(ToF)激光雷达应用,包括真空吸尘器、机器人、3D安全摄像头和3D传感。

EPC宣布推出EPC21701,这是一款单芯片激光驱动器,包含80 V、40 A FET、栅极驱动器和3.3逻辑电平输入,用于飞行时间激光雷达系统,包括用于机器人、监控系统和真空吸尘器。它专为用于手势识别、飞行时间 (ToF) 测量、机器人视觉或工业安全的激光雷达系统量身定制。

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GaN’s Evolution from Science Project to Mainstream Power Conductor

GaN’s Evolution from Science Project to Mainstream Power Conductor

Power-conversion technologies are experiencing the first tectonic shift since the move from bipolar to MOS. That shift, of course, is due to the viral adoption of wide-bandgap power devices. At this point, GaN is more than a specialty technology; it is a broad-scale replacement for silicon MOSFETs in applications ranging from 30 V up to 650 V — a multibillion-dollar market.

Power Electronics News
December, 2022
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New Automotive Qualified GaN FETs for Vehicle Electronics and Advanced Autonomy from EPC

New Automotive Qualified GaN FETs for Vehicle Electronics and Advanced Autonomy from EPC

EPC introduces two new 80 V AEC-Q101 qualified GaN FETs, offering designers significantly smaller and more efficient solutions than silicon MOSFETs for automotive 48 V- 12 V DC-DC conversion, infotainment, and lidar for autonomous driving.

EL SEGUNDO, Calif. — November 2022 — Efficient Power Conversion Corporation, the world’s leader in enhancement-mode gallium nitride (eGaN®) FETs and ICs, expands the selection of automotive, off-the-shelf gallium nitride transistors with the introduction of 80 V, 6 mΩ EPC2204A that delivers 125 A pulsed current in a 2.5 mm x 1.5 mm footprint and the 80 V, 3.2 mΩ EPC2218A that delivers 231 A pulsed current is a 3.5 mm x 1.95 mm footprint, offering designers significantly smaller and more efficient devices than silicon MOSFETs for automotive DC-DC for 48V-12V conversion, infotainment, and lidar for autonomous driving.

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EPC推出具有最高功率密度和效率的100 V耐辐射晶体管, 用于要求严格的航天应用

EPC推出具有最高功率密度和效率的100 V耐辐射晶体管, 用于要求严格的航天应用

宜普电源转换公司(EPC)扩展了其耐辐射氮化镓产品系列,新推的100 V产品用于要求严格的机载和其他高可靠性环境下的电源转换解决方案,进一步为这个产品系列添加第五个成员。

EPC公司宣布推出100 V、7 mΩ、160 APulsed的耐辐射GaN FET EPC7004。尺寸小至6.56 mm2,其总剂量等级大于1 Mrad,线性能量转移(LET)的单一事件效应(SEE)抗扰度为85 MeV/(mg/cm2)。EPC7004与EPC7014EPC7007EPC7019和EPC7018器件都是采用芯片级封装,这与其他商用的氮化镓场效应晶体管(eGaN® FET)和IC相同。封装器件将由EPC Space提供。

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EPC新推于市场上具有最低导通电阻的100 V耐辐射晶体管, 用于要求严格的航天应用

EPC新推于市场上具有最低导通电阻的100 V耐辐射晶体管, 用于要求严格的航天应用

宜普电源转换公司(EPC)扩展了其耐辐射氮化镓产品系列,新推的100 V器件用于要求严格的机载和其他高可靠性环境的电源转换解决方案,与目前市场上的任何100 V耐辐射晶体管相比,它具有最低的导通电阻。

EPC公司宣布推出100 V、3.9 mΩ、345 APulsed的耐辐射GaN FETEPC7018,尺寸为13.9 mm2,其总剂量等级大于1 Mrad,线性能量转移(LET)的单一事件效应(SEE)抗扰度为85 MeV/(mg/cm2)。与EPC7014、EPC7007和EPC7019耐辐射产品系列相同,都是采用芯片级封装。封装器件由EPC Space.提供。

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Sensitron and EPC Collaborate to Introduce a High-Power Density 350 V Gallium Nitride (GaN) Half Bridge Intelligent Power Module (IPM) That is 60% Smaller Than Comparable Silicon Solutions and Lower C

Sensitron and EPC Collaborate to Introduce a High-Power Density 350 V Gallium Nitride (GaN) Half Bridge Intelligent Power Module (IPM) That is 60% Smaller Than Comparable Silicon Solutions and Lower C

Sensitron introduces the SPG025N035P1B GaN half-bridge module using the 350 V EPC2050 eGaN® FET from Efficient Power Conversion (EPC)

EL SEGUNDO, Calif.— May 2022, Reducing size and cost were key concerns of Sensitron when designing their latest generation GaN power modules. By replacing traditional silicon FETs with EPC’s 350 V, EPC2050 GaN FET, Sensitron was able to reduce the size of their solution by 60% while also improving the module’s already excellent junction-to-case thermal conduction. The SPG025N035P1B from Sensitron is a high-power density 350 V, 20 A GaN half bridge with an integrated gate drive, optimized for stray inductance and switching performance at 500 khz. Rated at 20 A, the module can be used to control over 3 kW. Sensitron’s proprietary topside cooling technology on this ultra-small, lightweight high power density package (1.10" x 0.70" x 0.14") allows for optimal thermal performance. The SPG025N035P1B was designed for commercial, industrial, and aerospace applications.

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EPC新推实现超低导通电阻的200 V耐辐射晶体管, 用于要求严格的航天应用

EPC新推实现超低导通电阻的200 V耐辐射晶体管, 用于要求严格的航天应用

宜普电源转换公司(EPC)扩展了其耐辐射氮化镓产品系列,新推的200 V产品用于要求严格的机载和其他高可靠性环境下的电源转换解决方案,它具备超低的导通电阻和极小型化等优势。

EPC公司宣布推出200 V、25 mΩ、80 APulsed的耐辐射GaN FET EPC7007。尺寸小至5.76 mm2,其总剂量等级大于1 Mrad,线性能量转移(LET)的单一事件效应(SEE)抗扰度为85 MeV/(mg/cm2)。与商用eGaN FET和IC系列相同,采用芯片级封装。 封装器件将由EPC Space提供。

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EPC新推面向激光雷达应用的集成电路通过车规认证

EPC新推面向激光雷达应用的集成电路通过车规认证

宜普电源转换公司(EPC)宣布推出通过车规认证的晶体管和集成电路最新成员,针对飞行时间(ToF)激光雷达应用,让客户实现具有更高的性能和更小型化的解决方案,用于机器人、无人机、3D传感器和自动驾驶汽车等应用。

EPC公司宣布推出EPC2221,这是一款共源双路氮化镓场效应晶体管,额定电压为100 V、58 mΩ 和 20 A 脉冲电流,可用于机器人、监控系统、无人机、自动驾驶汽车和吸尘器的激光雷达系统。

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EPC新推350 V氮化镓功率晶体管,比等效硅器件小20倍且成本更低

EPC新推350 V氮化镓功率晶体管,比等效硅器件小20倍且成本更低

氮化镓功率晶体管EPC2050专为功率系统设计人员而设计,在极小的芯片级封装中,实现 350 V、80 mΩ 最大 RDS(on)和26 A 峰值电流,是多电平转换器、电动汽车充电、太阳能逆变器、激光雷达和 LED 照明的理想器件。

宜普电源转换公司(EPC)宣布推出 EPC2050,这是一款 350 V GaN 晶体管,最大 RDS(on) 为 80 mΩ,脉冲输出电流为 26 A。 EPC2050 的尺寸仅为 1.95 mm x 1.95 mm,与采用等效硅器件的解决方案相比,基于EPC2050的解决方案的占板面积小十倍。

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CES 2022: GaN Technology for the Next Future

CES 2022: GaN Technology for the Next Future

The year 2021 was a transitional year in which the world decided to open its doors to GaN. In this interview with Power Electronics News during CES week, GaN industry experts confirmed that GaN is now proving its superiority over silicon.

Power Electronics News
January, 2022
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EPC21601 eToF Laser Driver IC Wins ASPENCORE’s World Electronics Achievement Award – Product of the Year 2021 Power Semiconductor / Driver IC

EPC21601 eToF Laser Driver IC  Wins ASPENCORE’s World Electronics Achievement Award –  Product of the Year 2021 Power Semiconductor / Driver IC

November 3, 2021 - Efficient Power Conversion Corporation (EPC), the world’s leader in enhancement-mode gallium nitride on silicon (eGaN®) power FETs and ICs, has won the Product of the Year 2021 – Power Semiconductor/Driver IC of the prestigious World Electronics Achievement Awards (WEAA) for EPC21601 eToF™ Laser Driver IC.

The WEAA scheme honors products that have made outstanding contributions to the innovation and development of the electronics industry worldwide. A committee comprising of ASPENCORE global senior industry analysts and online users worldwide select the winners. ASPENCORE is the largest electronics industry media and SaaS group in the world featuring media titles including EE Times and EDN.

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LiDAR System Design of ToF Laser Driver with GaN

LiDAR System Design of ToF Laser Driver with GaN

The new gallium nitride (GaN) family aims to deliver time-of-flight (ToF) applications for autonomous cars and 3D sensing across the consumer and industrial sectors. In an interview with EE Times, Alex Lidow, CEO at EPC, highlighted how introducing the eToF Laser Driver family’s for LiDAR system design at a low cost competes with the Mosfet when it comes to LiDAR applications.

EEWeb
September, 2021
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氮化镓和 碳化硅器件的下一个浪潮

氮化镓和 碳化硅器件的下一个浪潮

根据将氮化镓和碳化硅材料的电子从价带转移到导带所需的能量,氮化镓和碳化硅器件被指定为宽带隙 (WBG) 半导体——碳化硅器件约为 3.2 eV,氮化镓器件则约为 3.4 eV,而硅器件只有1.1 eV 。WBG 的击穿电压更高,在某些应用中可以达到 1,700 V。 在今年 5 月举行的线上PCIM Europe展会上,几家公司展示了他们在 氮化镓和碳化硅技术方面的最新创新,并就 WBG 技术的发展方向分享了其独特见解。

EE Times – Europe
2021 年 7 月
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