客户可以在我们的网页 注册 ，定期收取最新消息包括全新产品发布、应用文章及更多其它资讯。如果你错过了已发布的资料，你可浏览以下的文档。
宜普电源转换公司(EPC)和Analog Devices(ADI)公司携手新推的参考设计采用经过全面优化的新型模拟控制器来驱动EPC的氮化镓场效应晶体管，可实现超过96.5%的效率。
宜普电源转换公司(EPC)宣布新推EPC9158，这是一款工作在500 kHz开关频率的双输出同步降压转换器参考设计，可将48 V~54 V的输入电压转换为12 V稳压输出，可提供高达每相25 A电流或50 A总连续电流。ADI的新型LTC7890同步氮化镓降压控制器与EPC的超高效GaN FET相结合，可为高功率密度应用提供占板面积小且非常高效的解决方案。该解决方案在48 V/12 V 、50 A连续电流下可实现 96.5%的效率。
阅读全文
Automotive 48 V/12 V converters are essential in modern hybrid electric vehicles, as the energy is exchanged between the 48 V and 12 V buses. This two-voltage system accommodates legacy 12 V systems and provides higher power for 48V to loads such as vacuum and water pumps, electric super chargers, steering, and audio systems. Among all the requirements for the 48 V/12 V converter, efficiency, power density, size and cost are on the top of the list. This article addresses these design criteria by employing the GaN ePower™ Stage, EPC23101, and compares it with a previous design using discrete EPC2206 devices.
Bodo’s Power Systems
March, 2022
Read article
阅读全文
This article presents the design and performance of an automotive buck/reverse-boost converter with GaN for efficient 48 V power distribution.
Electronics Today
December/January Edition
Read article
阅读全文
宜普电源转换公司(EPC)为工程师提供更多的设计工具、模型和性能仿真器，用于基于高性能氮化镓器件的设计。
EPC公司宣布推出GaN Power Bench™设计工具，帮助工程师实现基于氮化镓器件的设计的最高性能。eGaN® FET和IC具有快速开关、高效和小尺寸等优势，可满足当今前沿应用对功率密度的严格要求。GaN Power Bench工具可帮助设计工程师为各种应用选择最合适的氮化镓器件、模拟和优化设计的散热性能，并提供应用实例和相关文档，从而可以快速、轻松地实现最佳设计的理想性能。
阅读全文
EPC's chief executive, Alex Lidow, believes his GaN devices now beat silicon on performance and price, reports Rebecca Pool.
For EPC chief executive, Alex Lidow, this year's PCIM Europe 2019 has been all about applications. Presenting myriad enhanced-mode GaN FETs and ICs in end-products, the company is making a big play for 48 V DC-DC power conversion in advanced computing and automotives.
Compound Semiconductor
Read article
The increase in switching speed offered by GaN transistors requires good measurement technology, as well as good techniques to capture important details of high-speed waveforms. This article focuses on how to leverage the measurement equipment for the user’s requirement and measurement techniques to accurately evaluate high performance GaN transistors. The article also evaluates high bandwidth differential probes for use with non-ground-referenced waveforms.
EDN Network
By Suvankar Biswas , David Reusch & Michael de Rooij
Read article
阅读全文
EPC公司的全新开发板可以被配置为一个降压转换器或ZVS D类放大器，展示出基于eGaN FET、采用同步自举电路的栅极驱动器在高频工作时可以减少损耗。
宜普电源转换公司（EPC）推出EPC9066、EPC9067及EPC9068开发板，可以被配置为一个降压转换器或ZVS D类放大器。这些开发板专为功率系统设计师而设，对氮化镓晶体管的优越性能进行评估方面提供了简易方法，使得设计师的产品可以快速量产。三块开发板都配备了具有零QRR、同步自举整流器的栅极驱动器，从而在高达15 MHz的高频工作条件下可以提高效率。该些开发板在降压转换器及D类放大器配置的最大输出电流为2.7 A。在整个电流范围都可以降低损耗。
阅读全文
EPC9118演示板展示采用具高频开关优势、电源电压在48 V或以上的氮化镓场效应晶体管（eGaN® FET）可易于实现更小型及具更高效率的电源转换解决方案。
宜普电源转换公司推出全功能降压型功率转换演示电路-- EPC9118演示板，可支持30 V至60 V输入电压并转至5 V、 具20 A最高输出电流及400 kHz频率的降压转换器。它采用EPC2001 及EPC2015增强型氮化镓（eGaN®)场效应晶体管（FET）及LTC3891降压控制器。这个降压转换器设计是电信、工业及医疗应用所需的配电解决方案的理想设计。
阅读全文
在高频降压转换器配备最优的版图，使得在1MHz 频率下开关时器件可实现96%以上的效率。
EEWeb
日期：2013年9月
作者：Alex Lidow
阅读全文
eGaN FETs differ from silicon MOSFETs in part because of their significantly faster switching speeds. In the second article of this series, we explore the different requirements for gate drive, layout, and thermal management.
By Johan Strydom PHD, Director of Application Engineering, EPC
Power Electronics Technology
January 1, 2011
Read the article
阅读全文