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Efficient Power Conversion (EPC) and BrightLoop Converters Combine Design Expertise to Produce Smaller, Lighter Converters for Performance eMotorsport Vehicles

Efficient Power Conversion (EPC) and BrightLoop Converters Combine Design Expertise to Produce Smaller, Lighter Converters for Performance eMotorsport Vehicles

EL SEGUNDO, Calif. — December 2020 — BrightLoop Converters has greatly reduced the size, cost and improved reliability of its latest BB SP DC-DC buck converters thanks to Efficient Power Conversion Corporation’s (EPC) EPC2029 enhancement-mode gallium nitride (eGaN®) FET transistors. By switching from silicon (Si) transistors to gallium nitride (GaN), BrightLoop was able to increase the switching frequency of their design from 200 kHz to 600 kHz, while keeping the same efficiency. This design change increased the power density of the solution by a factor of approximately two and this resulted in lower cost by enabling the implementation of a smaller enclosure.

EPC’s EPC2029 is an 80 V, 48 A eGaN® FET featuring a 1 mm ball pitch. The wider pitch allows for placement of additional and larger vias under the device to enable high current carrying capability despite the extremely small 2.6 mm x 4.6 mm footprint.

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EPC推出300 W、双向、1/16砖型转换器评估模块, 专为采用氮化镓集成功率级的高功率密度计算应用和数据中心而设

EPC推出300 W、双向、1/16砖型转换器评估模块, 专为采用氮化镓集成功率级的高功率密度计算应用和数据中心而设

面向高功率密度且低成本的DC/DC转换,EPC9151功率模块利用EPC2152 ePower™功率级实现性能更高和尺寸更小的解决方案。

宜普电源转换公司(EPC)宣布推出EPC9151,这是一款300 W、双向、超小尺寸的1/16砖型DC/DC降压转换器模块,其尺寸仅为33 mm x 22.9 mm (1.3”x 0.9”)。EPC9151采用Microchip公司的数字信号控制器(dsPIC33CK)和EPC公司的 ePower™ 功率级集成电路(EPC2152),于300 W、48 V/12 V的转换器中,可以实现95%以上的效率,而且可以在这个可扩展的两相设计中增加相数,使得功率可以更高。

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EPC和Microchip公司携手开发用于高功率密度计算应用和数据中心的 300 W、1/16砖式48 V/12 V DC/DC转换器演示板

EPC和Microchip公司携手开发用于高功率密度计算应用和数据中心的 300 W、1/16砖式48 V/12 V DC/DC转换器演示板

美国微芯科技公司(Microchip Technology Inc.)的数字信号控制器(DSC)与宜普电源转换公司(EPC)的超高效氮化镓场效应晶体管(eGaN®FET)的结合,可实现最佳功率密度(730 W/in3),从而实现高效、低成本的DC-DC转换。

EPC公司宣布推出1/16砖式、300 W DC/DC稳压器(EPC9143)。 EPC9143功率模块把Microchip dsPIC33CK数字信号控制器(DSC)和最新一代eGaN FET(EPC2053)集成在一起,实现25 A、48 V/12 V和96%效率的功率转换。

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EPC to Showcase High Power Density eGaN FETs and ePower Stage IC in Customer Applications at PCIM Europe 2020 Digital Days

EPC to Showcase High Power Density eGaN FETs and ePower Stage IC in Customer Applications at PCIM Europe 2020 Digital Days

Efficient Power Conversion (EPC) will showcase the company’s latest ePower™ Stage IC family of products showing how GaN technology’s superior performance is transforming power delivery for computing, communications, robotics, and transportation at the PCIM Europe 2020 Digital Days.

EL SEGUNDO, Calif.— June 2020 — The EPC team will be delivering three technical presentations and participating in two panel discussions on gallium nitride (GaN) technology and applications at the upcoming PCIM Europe 2020 Digital Days, July 7 – 8. In addition, the company will participate in the event’s virtual exhibit, showing its latest eGaN FETs and ICs in customers’ end products that are rapidly adopting eGaN technology.

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Designing An Ultra-Thin Stepdown Converter: Multiphase Vs. Multilevel

Designing An Ultra-Thin Stepdown Converter: Multiphase Vs. Multilevel

Over the past decade computers, displays, smart phones and other consumer electronics systems have become thinner while also becoming more powerful. As a result, the market continues to increase its demand for thinner power supply solutions with greater power density. This article examines the feasibility of adopting various non-isolated dc-dc stepdown topologies for an ultra-thin 48-V to 20-V, 250-W power solution.

How2Power
May, 2020
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氮化镓与48 V应用 – 目前的发展及何去何从?

氮化镓与48 V应用 – 目前的发展及何去何从?

中压氮化镓场效应晶体管(eGaN FET)的成本在三年前已经比等效额定功率MOSFET器件的成本更低。当时,EPC公司决心利用氮化镓场效应晶体管的性能及成本效益优势,积极研发及支持48 V输入或输出的应用。车用及计算机应用的48 V 转换逐渐成为全新的架构,也成为了功率系统的全新标准。

Power Systems Design
2020年3月31日
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宜普电源转换公司(EPC)推出ePower 功率级集成电路系列,重新定义功率转换

宜普电源转换公司(EPC)推出ePower 功率级集成电路系列,重新定义功率转换

宜普电源转换公司(EPC)推出全新集成电路(IC)系列的首个产品,为高功率密度应用诸如DC/DC转换、电机驱动及D类放大器,提供更高性能及更小型化的解决方案。

宜普电源转换公司(EPC)宣布推出80 V、12.5 A的功率级集成电路,专为48 V DC/DC转换而设计,用于具有高功率密度的运算应用及针对电动车的电机驱动器。

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氮化镓(GaN)技术的最新发展是什么?

氮化镓(GaN)技术的最新发展是什么?

著名企业领袖 - 宜普电源转换公司(EPC)首席执行官Alex Lidow于2009年在市场推出第一个氮化镓晶体管。 经过了10年的氮化镓产品销售,DESIGN & ELEKTRONIK 杂志编辑Ralf Higgelke与Alex会面并谈论氮化镓技术的最新发展。

DESIGN & ELEKTRONIK杂志
2020年2月20日
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采用GaN技术的电源转换

采用GaN技术的电源转换

当硅技术已经到了性能极限,采用氮化镓器件的全新设计使得氮化镓技术得以继续普及。氮化镓器件的发展还是刚刚起步,它的性能将得以继续提升、集成电路也将会更具优势,以及将有更多全新的氮化镓产品推出市场。

Electronics Weekly
2019年12月
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Go-ahead for GaN

Go-ahead for GaN

It’s getting harder to avoid using GaN power transistors and ICs, says Alex Lidow. There are many reasons to use GaN-on-Si power transistors such as eGaN FETs, in telecoms, vehicles, healthcare and computing. Smaller, faster, lower cost, and more integrated, GaN-on-Si devices have spent a decade gaining the confidence and trust of designers across the spectrum of power conversion applications.

Electronic Specifier
November 20, 2019
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Executive Interview with Alex Lidow on Winning GaN Applications

Executive Interview with Alex Lidow on Winning GaN Applications

Ahead of December’s Power Conference in Munich, Bodo Arlt took the opportunity to get an insight into Alex Lidow’s thoughts on where the GaN market is now and where he sees the potential applications for the future. Dr. Lidow is the CEO and Co-founder of Efficient Power Conversion (EPC).

Bodo’s Power Systems
November, 2019
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Marco Palma Joins Efficient Power Conversion (EPC) as Senior FAE Manager for Europe

Marco Palma Joins Efficient Power Conversion (EPC) as Senior FAE Manager for Europe

In support of a widening customer base in Europe, Efficient Power Conversion Corporation has expanded its technical leadership team to assist customers in the adoption of eGaN® FETs and Integrated circuits for applications including DC-DC, Lidar, motor control, and beyond.

EL SEGUNDO, Calif. — October, 2019 — To support its accelerating design activity, and to provide local technical support to EPC’s customers in Europe, Efficient Power Conversion Corporation (EPC) is proud to announce that Marco Palma, a seasoned expert, has joined the EPC technical leadership team as Senior FAE Manager for Europe. 

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数据中心的发展于2019年将进入突飞猛进的时代

数据中心的发展于2019年将进入突飞猛进的时代

根据预测,到2025年,我们的数据将会超过175 zettabyte。当发明了 5G并将最早于2020年在日本举行的奥运采用、以及通过人工智能(AI)及机器学习(ML)的发展,建立数据中心和其部署、以及提升目前较旧的数据中心的效能,将进入突飞猛进的时代。

我深信氮化镓(GaN)功率晶体管是数据中心功率架构的最理想元件,因为需要小型化、高效及快速开关的元件。氮化镓器件在具48 VIN的所有拓扑,都可以实现最高的效率。

EDN
2019年6月
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氮化镓正面攻击硅功率MOSFET器件

氮化镓正面攻击硅功率MOSFET器件

目前的氮化镓场效应晶体管在尺寸及性能方面以飞快的速度发展,而目前为业界树立基准的氮化镓器件的性能还可以提升多300倍。

最早采用氮化镓器件的应用是利用氮化镓的超快速开关速度,例如面向全自动驾驶汽车和无人机的激光雷达系统、机械人,以及4G/LTE基站。氮化镓器件的产量一直在增加,而其价格跟开关速度更慢、尺寸更大型和日益陈旧的MOSFET器件相约。因此,目前正是氮化镓器件正面攻击MOSET的时候!。

Bodo’s Power System
2019年6月
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宜普电源转换公司提供氮化镓(eGaN)功率器件的晶圆

宜普电源转换公司提供氮化镓(eGaN)功率器件的晶圆

为了使得客户易于集成功率系统,宜普电源转换公司(EPC)为客户提供领导业界的氮化镓功率器件的晶圆。

EPC公司宣布推出领导业界的增强型氮化镓器件的晶圆,使得客户易于集成功率系统。EPC公司的氮化镓场效应晶体管(eGaN® FET)及集成电路一直以来都是以单个并包含锡条或锡球的芯片级器件出售。

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Thermal design for a high density GaN-based power stage

Thermal design for a high density GaN-based power stage

eGaN FETs and ICs enable very high-density power converter design, owing to their compact size, ultra-fast switching, and low on-resistance. The limiting factor for output power in most high-density converters is junction temperature, which prompts the need for more effective thermal design. The chip-scale packaging of eGaN FETs and ICs offer six-sided cooling, with effective heat extraction from the bottom, top, and sides of the die. This article presents a high-performance thermal solution to extend the output current capability of eGaN-based converters.

EDN
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EPC: Ahead of the Pack

EPC: Ahead of the Pack

EPC's chief executive, Alex Lidow, believes his GaN devices now beat silicon on performance and price, reports Rebecca Pool.

For EPC chief executive, Alex Lidow, this year's PCIM Europe 2019 has been all about applications. Presenting myriad enhanced-mode GaN FETs and ICs in end-products, the company is making a big play for 48 V DC-DC power conversion in advanced computing and automotives.

Compound Semiconductor
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PCIM Europe – where power is at the core of innovation

PCIM Europe – where power is at the core of innovation

This year’s PCIM Europe was attended by a record number of visitors, over 12,000. Over half (54%) were from outside Germany. They came to see over 500 exhibitors and while the subject matter was diverse and wide-ranging, there were some themes that emerged. GaN and SiC jostled for attention at this year’s PCIM Europe. Showing the potential that GaN has already realised, Efficient Power Conversion (EPC) had a stand that was well-stocked with examples of the eGaN FET technology that the company introduced in 2009.

Electronic Specifier
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车规级80 V EPC2214 eGaN FET 使得激光雷达系统看得更清晰

车规级80 V EPC2214 eGaN FET 使得激光雷达系统看得更清晰

宜普电源转换公司(EPC)进一步扩大车规级氮化镓产品系列 – 全新成员是面向具有高分辨率的激光雷达系统、80 V的EPC2214氮化镓场效应晶体管,该元件成功通过国际汽车电子协会所制定的AEC Q101应力测试认证。

宜普电源转换公司(EPC)宣布再多一个车用氮化镓(eGaN)器件(80 V的EPC2214)成功通过AEC Q101测试认证,可在车用及其它严峻环境支持多种全新应用。

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氮化镓技术可以提升面向服务器及汽车应用的48 V DC/DC 功率转换的效率

氮化镓技术可以提升面向服务器及汽车应用的48 V DC/DC 功率转换的效率

宜普电源转换公司(EPC)推出两个全新100 V氮化镓器件,可以支持服务器及汽车应用的48 V转换的要求。 我将在处理器、车用及能量存储系统等方面探讨48 V服务器的功率转换解决方案(可参考我的文章 “双向DC/DC电源供电: 我们应该如何取向?”),未来将在EDN文章中看到。氮化镓功率晶体管必需是这些不同架构的一部分 -- 我相信没有其它更优越的元件可以替代氮化镓器件了 。

Planet Analog
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