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EPC新推200 V、10 mΩ 、采用QFN封装的GaN FET, 实现高效灵活设计

EPC新推200 V、10 mΩ 、采用QFN封装的GaN FET, 实现高效灵活设计

宜普电源转换公司(EPC)推出 200 V、10 mΩ的EPC2307,完善了额定电压为 100V、150 V和200 V的6个GaN晶体管系列,提供更高的性能、更小的解决方案和易于设计的DC/DC 转换、AC/DC SMPS和充电器、太阳能优化器和微型逆变器,以及电机驱动器。

全球增强型氮化镓FET和IC领导者EPC推出 200 V、10 mΩ的EPC2307,采用耐热增强型QFN封装,占位面积仅为3 mm x 5 mm。

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Lowest On-resistance 150 V and 200 V Transistors on the Market Now Shipping from GaN Leader EPC

Lowest On-resistance 150 V and 200 V Transistors on the Market Now Shipping from GaN Leader EPC

Efficient Power Conversion (EPC) introduces the 150 V, 3 mΩ EPC2305 and the 200 V, 5 mΩ EPC2304 GaN FETs offering higher performance and smaller solution size and cost for DC-DC conversion, AC/DC SMPS and chargers, solar optimizers and microinverters, and motor drives.

EL SEGUNDO, Calif.— December 2022 — EPC, the world’s leader in enhancement-mode gallium nitride FETs and ICs, introduces the 150 V, 3 mΩ EPC2305 and the 200 V, 5 mΩ EPC2304 GaN FETs in a thermally enhanced QFN package with exposed top and tiny 3 mm x 5 mm footprint.

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EPC and VIS Announce Joint Collaboration on 8-inch Gallium Nitride Power Semiconductor Manufacturing

EPC and VIS Announce Joint Collaboration on 8-inch Gallium Nitride Power Semiconductor Manufacturing

Efficient Power Conversion (EPC) strengthens market leadership in gallium nitride power conversion by adding significant 8-inch manufacturing capacities in collaboration with Vanguard International Semiconductor Corporation (VIS).

EL SEGUNDO, Calif.— December 6, 2022 — EPC, the world’s leader in gallium nitride (GaN) power FETs and integrated circuits (ICs), and Vanguard International Semiconductor Corporation (VIS), a leading specialty IC foundry service provider, today jointly announced a multi-year production agreement to produce gallium nitride-based power semiconductors. EPC will utilize VIS’ 8-inch (200 mm) wafer fabrication capabilities, significantly increasing manufacturing capacities for EPC’s high-performance GaN transistors and integrated circuits. Manufacturing will commence in early 2023.

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Solarnative Uses GaN Devices to Solve the Challenge of Solar Power Installation with its New Microinverter that Integrates into the Module Frame

Solarnative Uses GaN Devices to Solve the Challenge of Solar Power Installation with its New Microinverter that Integrates into the Module Frame

GaN FETs help Solarnative achieve industry-leading power density for solar microinverters, enabling module frame integration to solve the challenges of solar power installation.

EL SEGUNDO, Calif.— November 2022 Solarnative uses GaN devices in its new microinverter to achieve industry-best power density.  The Power Stick is the smallest inverter in the world, with dimensions of 23.9 by 23,2 by 404 millimeters. With an AC output power of 350 W, the volume of 0.19 liters corresponds to a power density of 1.6 kW per liter. By comparison, the IQ 7A microinverter from a market leading supplier delivers 349 watts with a volume of 1.12 liters, corresponding to 0.31 kW per liter – not even one-fifth of the Solarnative device. Despite the extreme size reduction, the European efficiencies are quite comparable, at 96.0 percent for the Power Stick and 96.5 percent for the IQ 7A.

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BRC Solar的新一代太阳能优化器采用EPC的100 V氮化镓器件(eGaN FET)

BRC Solar的新一代太阳能优化器采用EPC的100 V氮化镓器件(eGaN FET)

BRC Solar公司的新型M500/14功率优化器采用EPC公司的100 V 氮化镓器件(EPC2218),它的占板面积小,可实现更高的频率和额定功率。

BRC Solar公司凭借其功率优化器彻底改变了光伏市场的发展、提高了光伏电站和系统的发电量和性能。其新一代M500/14 功率优化器采用了宜普电源转换公司的EPC2218(100 V的场效应晶体管),实现了更高的功率密度,因为GaN FET的低功耗和小尺寸使关键负载电路更加紧凑。而GaN FET的小寄生电容和电感可实现没有杂讯的开关和良好的EMI特性。GaN FET的另一个优点是没有反向恢复损耗。

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CES 2022: GaN Technology for the Next Future

CES 2022: GaN Technology for the Next Future

The year 2021 was a transitional year in which the world decided to open its doors to GaN. In this interview with Power Electronics News during CES week, GaN industry experts confirmed that GaN is now proving its superiority over silicon.

Power Electronics News
January, 2022
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EPC Introduces 350 V eGaN Power Transistor − 20 Times Smaller Than Comparable Silicon

EPC Introduces 350 V eGaN Power Transistor − 20 Times Smaller Than Comparable Silicon

The EPC2050 offers power systems designers a 350 V, 65 mΩ, 26 A power transistor in an extremely small chip-scale package.  These new devices are ideal for applications such as multi-level converters, EV charging, solar power inverters, and motor drives.

EL SEGUNDO, Calif. — April 2018 — Efficient Power Conversion announces the EPC2050, a 350 V GaN transistor with a maximum RDS(on) of 65 mΩ and a 26 A pulsed output current. Applications include EV charging, solar power inverters, motor drives, and multi-level converter configurations, such as a 3-level, 400 V input to 48 V output LLC converter for telecom or server power supplies.

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宜普电源转换公司(EPC)推出比等效MOSFET小型化12倍 的200 V氮化镓功率晶体管

宜普电源转换公司(EPC)推出比等效MOSFET小型化12倍 的200 V氮化镓功率晶体管

200 V、25 mΩ氮化镓功率晶体管(EPC2046)比等效MOSFET小型化12倍,可应用于无线充电、多级AC/DC电源供电、机械人应用及太阳能微型逆变器。

宜普电源转换公司(EPC)宣布推出面向多种应用的EPC2046功率晶体管,包括无线充电、多级AC/DC电源供电、机械人应用、太阳能微型逆变器及具低电感的马达驱动器。EPC2046的额定电压为200 V、最大导通电阻RDS(on)为25 mΩ、脉冲输出电流为55 A。

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EPC eGaN技术在性能及成本上实现质的飞跃

EPC eGaN技术在性能及成本上实现质的飞跃

EPC公司宣布推出EPC2045及EPC2047氮化镓场效应晶体管(eGaN®FET),对比前一代的产品,这些晶体管的尺寸减半,而且性能显著提升。

全球增强型氮化镓晶体管领袖厂商、致力于开发创新的硅基功率场效应晶体管(eGaN FET)及集成电路的宜普电源转换公司(EPC)宣布推出全新的EPC2045(7 mΩ、100 V)及EPC2047(10 mΩ、200 V)晶体管,在提升产品性能之同时也可以降低成本。100 V的EPC2045应用于开放式伺服器架构应用于开放式伺服器架构以实现48 V至负载的单级电源转换、负载点(POL)转换器、USB-C及激光雷达(LiDAR)等应用。200 V 的EPC2047的应用例子包括无线充电、多级AC/DC电源供电、机械人应用及太阳能微型逆变器

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