案例聚焦新一代替代硅技术

(加利福尼亚州，埃尔塞贡多）--氮化镓（GaN）技术的全球领导者宜普电源转换公司（Efficient Power Conversion Corporation, EPC）于今日向美国联邦法院和美国国际贸易委员会（U.S. International Trade Commission, ITC）提起诉讼，主张其基础专利组合中的四项专利受到英诺赛科（珠海）科技有限公司及其子公司（统称英诺赛科）侵犯。 这些专利涵盖了宜普公司独家的增强型氮化镓功率半导体器件的设计和制造工艺的核心环节。这些专利是创新技术，已成功将基于氮化镓的功率器件从一个研究项目，发展成为一个可大批量生产的替代硅产品。使用氮化镓器件的晶体管和集成电路，较使用硅基器件而言更高效，更小型，成本更低。

我们将在本文讨论客户为何迟迟未采用氮化镓技术的一些最常见原因，氮化镓技术显然是较旧的硅基功率MOSFET的替代技术。在不深入研究详细的统计数据下，按最常发生推导出一系列原因，并理解某些应用比其他应用更侧重氮化镓技术的某些特性。我们的讨论仅限于额定电压低于400 V的器件，因为这是EPC公司的氮化镓场效应晶体管和集成电路的重点应用。

PSD功率系统设计
2022年3月
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EPC proudly announces the induction of Dr. Alex Lidow, CEO and co-founder into the ISPSD Hall of Fame 2019

El Segundo, Calif. – May 2019 – Efficient Power Conversion (EPC) Corporation proudly announces that Dr. Alex Lidow, CEO and co-founder, is inducted into the ISPSD Hall of Fame 2019. This prestigious honor is bestowed upon an honored contributor to advancing power semiconductor technology and sustaining the success of ISPSD. This Hall of Fame award was announced on May 20^th, 2019 at 31^st IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD) 2019 at the Marriott Parkview Hotel, Shanghai, China.

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SL70040SEH Low Side GaN FET Driver Powers ISL7002xSEH GaN FETs in Launch Vehicle and Satellite Power Supplies

TOKYO--(BUSINESS WIRE)--Renesas Electronics Corporation (TSE:6723), a premier supplier of advanced semiconductor solutions, today announced the space industry’s first radiation-hardened, low side Gallium Nitride (GaN) field effect transistor (FET) driver and GaN FETs that enable primary and secondary DC/DC converter power supplies in launch vehicles and satellites, as well as downhole drilling and high reliability industrial applications. These devices power ferrite switch drivers, motor control driver circuits, heater control modules, embedded command modules, 100V and 28V power conditioning, and redundancy switching systems.

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