EPC9159是一款1 kW、48 V/12 V的LLC转换器，占板面积仅为17.5 mm x 22.8 mm，可实现5130 W/in³最先进的功率密度。

宜普电源转换公司(EPC)宣布推出EPC9159参考设计。这是一款48 V/12 V的LLC转换器，专为高功率密度48 V服务器电源和DC/DC转换器而设计。该参考设计可在17.5 mm x 22.8 mm的微小封装内提供高达1 kW的功率，其功率密度为5130 W/in³。这是在初级侧和次级侧电路中采用于高开关频率工作的氮化镓(GaN)功率器件才可以实现的。

宜普电源转换公司(EPC)和Analog Devices(ADI)公司携手新推的参考设计采用经过全面优化的新型模拟控制器来驱动EPC的氮化镓场效应晶体管，可实现超过96.5%的效率。

宜普电源转换公司(EPC)宣布新推EPC9158，这是一款工作在500 kHz开关频率的双输出同步降压转换器参考设计，可将48 V~54 V的输入电压转换为12 V稳压输出，可提供高达每相25 A电流或50 A总连续电流。ADI的新型LTC7890同步氮化镓降压控制器与EPC的超高效GaN FET相结合，可为高功率密度应用提供占板面积小且非常高效的解决方案。该解决方案在48 V/12 V 、50 A连续电流下可实现 96.5%的效率。

宜普电源转换公司(EPC)发布第十五阶段产品可靠性测试报告，进一步丰富了关于氮化镓器件可靠性的知识库和展示了EPC eGaN产品的稳健耐用性已在实际应用中得到验证。

EPC宣布发布其第十五阶段产品可靠性测试报告，记录了持续使用测试器件至失效的方法，并针对太阳能优化器、激光雷达传感器和DC/DC转换器等实际应用，加入了具体的可靠性指标和预测数据。

EPC推出 80 V、通过AEC-Q101 认证的氮化镓场效应晶体管（GaN FET）EPC2252，为设计人员提供比硅 MOSFET 更小和更高效的解决方案，用于车规级激光雷达、48 V/12 V DC/DC转换和低电感电机驱动器。

作为增强型氮化镓 (eGaN^®) FET 和 IC 的全球领导者，宜普电源转换公司（EPC）进一步扩大已有现货供应的车规级氮化镓晶体管系列，推出80 V、11 mΩ、在 1.5 mm x 1.5 mm 封装内提供 75 A 脉冲电流的EPC2252，比硅MOSFET更小和更高效，适用于自动驾驶和其他先进驾驶辅助系统应用中的车规级激光雷达、48 V/12 V DC/DC转换和低电感电机驱动器。

EPC introduces two new 80 V AEC-Q101 qualified GaN FETs, offering designers significantly smaller and more efficient solutions than silicon MOSFETs for automotive 48 V- 12 V DC-DC conversion, infotainment, and lidar for autonomous driving.

EL SEGUNDO, Calif. — November 2022 — Efficient Power Conversion Corporation, the world’s leader in enhancement-mode gallium nitride (eGaN^®) FETs and ICs, expands the selection of automotive, off-the-shelf gallium nitride transistors with the introduction of 80 V, 6 mΩ EPC2204A that delivers 125 A pulsed current in a 2.5 mm x 1.5 mm footprint and the 80 V, 3.2 mΩ EPC2218A that delivers 231 A pulsed current is a 3.5 mm x 1.95 mm footprint, offering designers significantly smaller and more efficient devices than silicon MOSFETs for automotive DC-DC for 48V-12V conversion, infotainment, and lidar for autonomous driving.

宜普电源转换公司（EPC）新推40 V、1.1 mΩ的氮化镓场效应晶体管（EPC2066），为设计工程师提供比硅MOSFET更小、更高效的器件，用于高性能、占板面积受限的应用。

全球行业领先供应商宜普电源转换公司 为业界提供增强型氮化镓（eGaN^®）功率场效应晶体管和集成电路，新推40 V、典型值为0.8 mΩ的EPC2066氮化镓场效应晶体管，为客户提供更多可选的低压氮化镓晶体管和可以立即发货。

The EPC2050 from Efficient Power Conversion is an Enhancement Mode GaN Power Transistor. It has a drain-source voltage of over 350 V, a drain-source on-resistance of 55 milliohms, and a gate threshold voltage of 1.3 V.

everything PE
April, 2022
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以碳化硅(SiC)、氮化镓(GaN)材料为主流的宽带隙(WBG)半导体功率器件，在节能永续意识抬头的今日成为各种功率系统应用的宠儿。2022年Tech Taipei研讨会首度以WBG器件为题，邀请业界重量级业者，从设计、制造、测试等不同面向与现场超过400位听众分享最新技术与应用趋势...

EE Times Taiwan
2022年3月25日
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当数据中心的服务器转用48 V架构，氮化镓晶体管可以替代目前的硅MOSFET器件，性能得以进一步提升和成本可以更低。

Data Center Dynamics
2022年3月
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瑞萨电子(Renesas)的两相同步GaN升压控制器与宜普电源转换公司（EPC）的超高效eGaN^® FET相结合，实现了高功率密度和低成本的DC/DC转换。

宜普电源转换公司(EPC)宣布推出12 V输入、48 V输出、500 W的DC/DC演示板（EPC9166）。该演示板展示出瑞萨电子ISL81807 80 V两相同步升压控制器和宜普公司最新一代EPC2218 eGaN FET，在开关频率为500 kHz的12 V输入到48 V稳压输出转换中，效率超过96.5%。输出电压可配置为36 V、48 V和60 V。该板在没有散热器的情况下，可提供480 W的功率。

宜普电源转换公司（EPC）推出ePower芯片组系列。该系列集成了100 V氮化镓驱动器和场效应晶体管，可实现高达65 A的输出电流，为高功率密度应用提供更高的性能和更小型化的解决方案，包括DC/DC转换和电机驱动等应用。

宜普电源转换公司宣布推出100 V、65 A的集成电路芯片组，专为48 V DC/DC转换 而设计，用于高密度计算应用和用于电动汽车、机器人和无人机的48 V BLDC电机驱动器。

The design of an LLC resonant converter illustrates how eGaN FETs can shrink the physical size of modern supply circuitry.

Power Electronic Tips
October, 2021
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在过去十年中，计算机、显示器、智能手机和其他消费电子系统变得更薄，同时功能也变得更强大。因此，市场对具有更高功率密度的更纤薄电源解决方案的需求不断增加。本文研究了额定功率为 250 W且超薄的48 V / 20 V转换器，它可以采用各种非隔离型 DC/DC 降压拓扑的可行性。我们研究了各种非隔离型拓扑的优缺点，从而了解拓扑如何影响功率晶体管和磁性元件的选择，特别是电感器，因为这两个器件产生转换器的大部分损耗。本文还详细分析了为这些应用设计薄型电感器所面对的挑战，包括电感器损耗的因素、电感器尺寸和设计权衡，包括对 EMI 的影响。我们是以选择、构建和测试了超薄多电平转换器拓扑。从该转换器获得的实验结果，用于进一步优化操作设置和元件的选择，从而实现超过 98%的峰值效率。

EPC公司Michael de Rooij
Würth Elektronik 公司Quentin Laidebeur

IEEE Power Electronics Magazine
2021年９月
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这些新一代氮化镓场效应晶体管(eGaN FET) 满足了目前电动出行（eMobility）、交付和物流机器人，以及无人机市场所需的紧凑型 BLDC 电机驱动器和具成本效益、高分辨率的飞行时间（ToF）的新需求。

宜普电源转换公司（EPC）是增强型硅基氮化镓 (eGaN) 功率 晶体管和集成电路的全球领导者。新推的EPC2065 和 EPC2054具备更高的性能和更低的成本等优势。

Efficient Power Conversion (EPC) introduces a new family of radiation-hardened (rad-hard) gallium nitride (GaN) products for power conversion solutions in critical spaceborne and other high reliability environments.

EL SEGUNDO, Calif.— June 2021 — EPC announces the introduction of a new family of radiation-hardened gallium nitride transistors and integrated circuits. With higher breakdown strength, faster switching speed, higher thermal conductivity and lower on-resistance, power devices based on GaN significantly outperform silicon-based devices. The lower resistance and gate charge enable faster power supply switching frequencies resulting in higher power densities, higher efficiencies, and more compact and lighter weight circuitry for critical spaceborne missions. Gallium nitride is also inherently radiation tolerant, making GaN-based devices a reliable, higher performing power transistor option for space applications.

Efficient Power Conversion (EPC) announces that the EPC2152 ePower™ Stage IC has received the 2020 Elektra Award for Semiconductor Product of the Year (Analogue).

EL SEGUNDO, Calif.— March 2021 — EPC’s ePower™ stage, EPC2152 Integrated Circuit (IC), has been honored with an Elektra Award 2020 in the Semiconductor Product of the Year – Analogue category. The award presentation was announced on March 25^th during a virtual awards ceremony hosted by Electronics Weekly. These prestigious annual awards have been running for over 19 years to reward and recognize companies and individuals for their excellent performance, innovation, and contribution to the global electronics industry. Judging is carried out by an independently and unbiased, diverse, and knowledgeable panel of industry experts.

Efficient Power Conversion (EPC) expands AEC Q101 product family with the addition of the EPC2219, 65 V gallium nitride transistor with integrated reverse gate clamp diode optimized for high resolution lidar systems.

EL SEGUNDO, Calif.— March 2021 — EPC announces successful AEC Q101 qualification of the 65 V EPC2219 designed for lidar systems in the automotive industry and other harsh environments. 

The combination of the Renesas dual synchronous GaN buck controller and ultra-efficient eGaN^® FETs from EPC (Efficient Power Conversion) enables high power density and efficiency with the same BOM size and cost as silicon.

EL SEGUNDO, Calif.—  February, 2021 — EPC announces the availability of the EPC9157, a 300 W DC-DC demo board in the tiny 1/16^th brick size, measuring just 33 mm x 22.9 mm x 9mm (1.3 x 0.9 x 0.35 in). The EPC9157 demo board integrates the Renesas ISL81806 80 V dual synchronous buck controller with the latest-generation EPC2218 eGaN FETs from EPC to achieve greater than 95% efficiency for 48 V input to 12 V regulated output conversion at 25 A.  

This article discusses how GaN-based solutions coupled with digital control increase efficiency, shrink the size, and reduce system costs for high density computing applications like ultra-thin laptops and high-end gaming systems. As computers, displays, smartphones and other consumer electronics systems become thinner and more powerful over the past decade, there is increasing demand for addressing the challenge of thinner solutions while extracting more power out of limited space. To address this challenge, the comparative advantages of various non-isolated DC-DC step-down topologies for ultra-thin 48 V – 20 V power solutions that are designed to fit inside a notebook computer or an ultra-thin display are examined.

Power Electronics News
January, 2021
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Efficient Power Conversion (EPC) publishes Phase-12 Reliability Report adding to the extensive knowledge found in their first eleven reports. With this report, EPC demonstrates field experience of 226 billion eGaN ^® device hours and a robustness capability unmatched by silicon power devices.

EL SEGUNDO, Calif.— January 2021 — EPC announces its Phase-12 Reliability Report, documenting the strategy used to achieve a remarkable field reliability record. eGaN devices have been in volume production for more than eleven years and have demonstrated very high reliability in over 226 billion hours of operation, most of which are in vehicles, LTE base stations, and satellites, to name just a few applications with rigorous operating conditions.