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New Automotive Qualified GaN FETs for Vehicle Electronics and Advanced Autonomy from EPC

New Automotive Qualified GaN FETs for Vehicle Electronics and Advanced Autonomy from EPC

EPC introduces two new 80 V AEC-Q101 qualified GaN FETs, offering designers significantly smaller and more efficient solutions than silicon MOSFETs for automotive 48 V- 12 V DC-DC conversion, infotainment, and lidar for autonomous driving.

EL SEGUNDO, Calif. — November 2022 — Efficient Power Conversion Corporation, the world’s leader in enhancement-mode gallium nitride (eGaN®) FETs and ICs, expands the selection of automotive, off-the-shelf gallium nitride transistors with the introduction of 80 V, 6 mΩ EPC2204A that delivers 125 A pulsed current in a 2.5 mm x 1.5 mm footprint and the 80 V, 3.2 mΩ EPC2218A that delivers 231 A pulsed current is a 3.5 mm x 1.95 mm footprint, offering designers significantly smaller and more efficient devices than silicon MOSFETs for automotive DC-DC for 48V-12V conversion, infotainment, and lidar for autonomous driving.

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基于GaN FET封装兼容的解决方案可实现性能和成本优化并同时提高功率密度和热性能

基于GaN FET封装兼容的解决方案可实现性能和成本优化并同时提高功率密度和热性能

宜普电源转换公司(EPC)新推100 V、3.8 mΩ 的氮化镓场效应晶体管EPC2306,为高功率密度应用提供性能更高和更小的解决方案,包括 DC/DC 转换、AC/DC 充电器、太阳能优化器和微型逆变器、电机驱动器和D类音频放大器等应用。

宜普电源转换公司是增强型氮化镓(eGaN®)功率FET和IC领域的全球领导者,新推100 V、采用耐热增强型QFN封装的EPC2306,用于高密度计算应用的48 V DC/DC转换、电动汽车和机器人的48 V BLDC 电机驱动器、太阳能优化器和微型逆变器,以及 D 类音频放大器

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35 A ePower功率级集成电路让您实现更高的功率密度并简化设计

35 A ePower功率级集成电路让您实现更高的功率密度并简化设计

宜普电源转换公司(EPC)推出ePower™功率级集成电路,它集成了整个半桥功率级,可在1 MHz工作时实现高达35 A的输出电流,为高功率密度应用提供更高的性能和更小型化的解决方案,包括DC/DC转换、电机驱动和D类音频放大器等应用。

宜普电源转换公司(EPC)宣布推出100 V、35 A的集成电路,专为48 V DC/DC转换而设计,用于高密度计算应用和面向电动汽车、机器人和无人机的48 V BLDC电机驱动器。

EPC23102 eGaN集成电路可实现100 V的最大耐受电压、实现高达35 A的负载电流和高于1 MHz的开关速度。

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Efficient Power Conversion (EPC) and innosonix Address Power Consumption and Overall Efficiency Demands for High-end Audio Amplifier Application with eGaN FET Design

Efficient Power Conversion (EPC) and innosonix Address Power  Consumption and Overall Efficiency Demands for High-end Audio Amplifier Application with eGaN FET Design

EL SEGUNDO, Calif. — September 2021 — Idle power consumption and overall efficiency were key concerns of innosonix GmBH when designing its latest high-end Maxx Series multi-channel power amplifier. By changing from traditional silicon FETs to EPC’s EPC2059 eGaN FET the company reduced idle loss by 35% and lowered the on resistance to increase the total power efficiency by 5%.

The EPC2059 is a 6.8 mΩ, 170 V enhancement-mode gallium nitride (eGaN) transistor offering superior audio performance for high-end amplifier applications. The low on resistance and low capacitance of the EPC2059 enables high efficiency and lowers open loop impedance for low Transient Intermodulation Distortion (T-IMD). The fast-switching capability and zero reverse recovery charge enable higher output linearity and low cross over distortion for lower Total Harmonic Distortion (THD).

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EPC新推80 V和200 V eGaN FET,扩大其高性能eGaN系列的产品阵容

EPC新推80 V和200 V eGaN FET,扩大其高性能eGaN系列的产品阵容

这些新一代氮化镓场效应晶体管(eGaN FET) 满足了目前电动出行(eMobility)、交付和物流机器人,以及无人机市场所需的紧凑型 BLDC 电机驱动器和具成本效益、高分辨率的飞行时间(ToF)的新需求。

宜普电源转换公司(EPC)是增强型硅基氮化镓 (eGaN) 功率 晶体管和集成电路的全球领导者。新推的EPC2065 和 EPC2054具备更高的性能和更低的成本等优势。

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EPC to Showcase High Power Density eGaN FETs and ICs in Volume Customer Applications at PCIM Europe 2021 Digital Days

EPC to Showcase High Power Density eGaN FETs and ICs in Volume Customer Applications at PCIM Europe 2021 Digital Days

Efficient Power Conversion (EPC) will showcase the company’s latest enhancement-mode gallium nitride-based FETs and ICs demonstrating how GaN technology’s superior performance is transforming power delivery for automotive, computing, and robotics at the PCIM Europe 2021 Digital Days.

EL SEGUNDO, Calif.— April 2021 — The EPC team will be delivering two technical presentations, an educational tutorial, an exhibitor webinar, and participating in panel discussions on gallium nitride (GaN) technology and applications at the upcoming PCIM Europe 2021 Digital Days, May 3 – 7. In addition, the company will participate in the event’s virtual exhibition, showing its latest eGaN FETs and ICs in customers’ end products that are rapidly adopting eGaN® technology.

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Efficient Power Conversion (EPC) Receives Elektra Award 2020 for Semiconductor Product of the Year (Analogue) for ePower Stage IC

Efficient Power Conversion (EPC) Receives Elektra Award 2020 for Semiconductor Product of the Year (Analogue) for ePower Stage IC

Efficient Power Conversion (EPC) announces that the EPC2152 ePower™ Stage IC has received the 2020 Elektra Award for Semiconductor Product of the Year (Analogue).

EL SEGUNDO, Calif.— March 2021 — EPC’s ePower™ stage, EPC2152 Integrated Circuit (IC), has been honored with an Elektra Award 2020 in the Semiconductor Product of the Year – Analogue category. The award presentation was announced on March 25th during a virtual awards ceremony hosted by Electronics Weekly. These prestigious annual awards have been running for over 19 years to reward and recognize companies and individuals for their excellent performance, innovation, and contribution to the global electronics industry. Judging is carried out by an independently and unbiased, diverse, and knowledgeable panel of industry experts.

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EPC Automotive Qualified 65 V eGaN FET Enables Higher Resolution for Lidar Systems

EPC Automotive Qualified 65 V eGaN FET Enables Higher Resolution for Lidar Systems

Efficient Power Conversion (EPC) expands AEC Q101 product family with the addition of the EPC2219, 65 V gallium nitride transistor with integrated reverse gate clamp diode optimized for high resolution lidar systems.

EL SEGUNDO, Calif.— March 2021 — EPC announces successful AEC Q101 qualification of the 65 V EPC2219 designed for lidar systems in the automotive industry and other harsh environments. 

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EPC Releases Physics-Based Models That Project eGaN Device Lifetime in New Reliability Report

EPC Releases Physics-Based Models That Project eGaN Device Lifetime in New Reliability Report

Efficient Power Conversion (EPC) publishes Phase-12 Reliability Report adding to the extensive knowledge found in their first eleven reports. With this report, EPC demonstrates field experience of 226 billion eGaN ® device hours and a robustness capability unmatched by silicon power devices.

EL SEGUNDO, Calif.— January 2021 — EPC announces its Phase-12 Reliability Report, documenting the strategy used to achieve a remarkable field reliability record. eGaN devices have been in volume production for more than eleven years and have demonstrated very high reliability in over 226 billion hours of operation, most of which are in vehicles, LTE base stations, and satellites, to name just a few applications with rigorous operating conditions.

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Efficient Power Conversion (EPC) Launches 40 V eGaN FET Ideal for High Power Density Solutions for USB-C Battery Chargers and Ultra-thin Point-of-Load Converters

Efficient Power Conversion (EPC) Launches 40 V eGaN FET Ideal for High Power Density Solutions for USB-C Battery Chargers and Ultra-thin Point-of-Load Converters

EPC introduces the 40 V, 3 milliohm EPC2055 eGaN® FET, offering designers a device that is smaller, more efficient, and more reliable than currently available devices for high performance, space-constrained applications.

EL SEGUNDO, Calif. — December 2020 — Efficient Power Conversion Corporation, the world’s leader in enhancement-mode gallium nitride on silicon (eGaN) power FETs and ICs, advances the performance capability of low voltage, off-the-shelf gallium nitride transistors with the introduction of the EPC2055 (3 mΩ, 40 V) eGaN FET. 

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与硅MOSFET相比,宜普电源转换公司(EPC)最新推出的100 V eGaN FET产品系列 为业界树立了全新的性能基准

与硅MOSFET相比,宜普电源转换公司(EPC)最新推出的100 V eGaN FET产品系列 为业界树立了全新的性能基准

新一代100 V 氮化镓场效应晶体管(eGaN® FET)是48 VOUT同步整流、D类音频放大器、汽车信息娱乐及激光雷达系统的理想功率器件。

增强型硅基氮化镓(eGaN)功率场效应晶体管和集成电路的全球领导厂商宜普电源转换公司(EPC)最新推出的两款100 V eGaN FET(EPC2218EPC2204),性能更高并且成本更低,可立即发货。采用这些先进氮化镓器件的应用非常广阔,包括同步整流器、D类音频放大器、汽车信息娱乐系统、DC/DC转换器(硬开关和谐振式)和面向全自动驾驶汽车、机械人及无人机的激光雷达系统

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面向快速发展的关键应用的GaN HEMT,它的性能优于MOSFET

面向快速发展的关键应用的GaN HEMT,它的性能优于MOSFET

硅功率MOSFET未能跟上电力电子行业的发展变化,而效率、功率密度和更小的外形尺寸等因素是行业的主要需求。 硅MOSFET器件的性能已达到其理论极限,并且由于电路板的空间非常宝贵,因此功率系统设计人员必需找出替代方案。 氮化镓(GaN)器件是一种高电子迁移率晶体管(HEMT),这种半导体正为新兴应用不断增值。

EETimes
2020年8月
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宜普电源转换公司(EPC)的200 V 氮化镓产品系列(eGaN FET)的性能提升一倍

宜普电源转换公司(EPC)的200 V 氮化镓产品系列(eGaN FET)的性能提升一倍

新一代200 V 氮化镓场效应晶体管(eGaN® FET)是48 VOUT同步整流、D类音频放大器、太阳能微型逆变器和功率优化器,以及多电平、高压AC / DC转换器的理想功率器件。

增强型硅基氮化镓(eGaN)功率场效应晶体管和集成电路的全球领导厂商宜普电源转换公司(EPC)最新推出的两款200 V eGaN FET(EPC2215EPC2207),性能更高而同时成本更低,目前已有供货。采用这些领先氮化镓器件的应用十分广阔,包括D类音频放大器、同步整流器、太阳能最大功率点跟踪器(MPPT)、DC/DC转换器(硬开关和谐振式),以及多电平高压转换器。

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虚拟圆桌会议 : 用于D类音频放大器的氮化镓器件与硅器件的比较(第2部分,共2部分)

虚拟圆桌会议 : 用于D类音频放大器的氮化镓器件与硅器件的比较(第2部分,共2部分)

在EEWorld “虚拟圆桌会议” 关于D类音频的讨论的第二部分中,我们的小组成员深入探讨了新兴氮化镓器件(GaN)对D类设计的影响:硅器件在哪方面仍然占主导地位? 在D类放大器中使用GaN的性能优势是什么? D类放大器中GaN与硅的未来预期趋势如何?

参加这个虚拟圆桌会议包括Analog Devices公司音频系统架构师Joshua LeMaire(JL)、 宜普电源转换公司(EPC)战略技术销售副总裁Steve Colino(SC)和 英飞凌(Infineon )D类音频应用工程主管Jens Tybo Jensen(JTJ)。

EEWorld Online
2020年7月
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Power Product News from ‘Virtual APEC’

Power Product News from ‘Virtual APEC’

Starting on page 13 of this story, EPC discusses with David Morrison the latest GaN developments meant for APEC. Alex Lidow, CEO and co-founder of EPC, discussed his company’s new power stage ICs, their development of GaN-based reference designs using a multi-level topology and various demos that were originally bound for APEC.

How2Power Today
April, 2020
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学习利用氮化镓(GaN)技术设计最先进的人工智能、机械人、无人机、 全自动驾驶汽车及高音质音频系统

学习利用氮化镓(GaN)技术设计最先进的人工智能、机械人、无人机、 全自动驾驶汽车及高音质音频系统

EPC公司进一步更新了其广受欢迎的教育视频播客系列,上载了6个视频,针对器件可靠性及基于氮化镓场效应晶体管及集成电路的各种先进应用,包括面向人工智能的高功率密度运算应用,面向机械人、无人机及车载应用的激光雷达系统,以及D类放音频放大器。

宜普电源转换公司(EPC)更新了其广受欢迎的“如何使用氮化镓器件”的视频播客系列。刚刚上载的六个视频主要分享实用范例,目的是帮助设计师利用氮化镓技术设计面向人工智能服务器及超薄笔记本电脑的先进DC/DC转换器、面向机械人、无人机及全自动驾驶汽车的激光雷达系统,以及实现有可能是具有最高音质的音频系统

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宜普电源转换公司(EPC)推出ePower 功率级集成电路系列,重新定义功率转换

宜普电源转换公司(EPC)推出ePower 功率级集成电路系列,重新定义功率转换

宜普电源转换公司(EPC)推出全新集成电路(IC)系列的首个产品,为高功率密度应用诸如DC/DC转换、电机驱动及D类放大器,提供更高性能及更小型化的解决方案。

宜普电源转换公司(EPC)宣布推出80 V、12.5 A的功率级集成电路,专为48 V DC/DC转换而设计,用于具有高功率密度的运算应用及针对电动车的电机驱动器。

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宜普电源转换公司(EPC)推出基于车规级氮化镓(eGaN)技术的飞行时间(ToF)演示板,可在高达28 A并具1.2纳秒脉宽的脉冲电流驱动激光

宜普电源转换公司(EPC)推出基于车规级氮化镓(eGaN)技术的飞行时间(ToF)演示板,可在高达28 A并具1.2纳秒脉宽的脉冲电流驱动激光

EPC9144演示板内的车规级EPC2216氮化镓场效应晶体管(eGaN® FET)可支持大電流納秒脈衝的應用,提供高速的大电流脉冲 – 电流可高达28 A、脉宽则可低至1.2纳秒,从而使得飞行时间及flash激光雷达系统更准确、更精确及更快速。

宜普电源转换公司(EPC)宣布推出15 V、28 A大电流脉冲激光二极管驱动电路板(EPC9144)。

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宜普电源转换公司(EPC)于CES 2020展览展示基于氮化镓技术的应用,包括全自动驾驶汽车、无线电源、无人机、机器人及高端音频系统

宜普电源转换公司(EPC)于CES 2020展览展示基于氮化镓技术的应用,包括全自动驾驶汽车、无线电源、无人机、机器人及高端音频系统

于Venetian酒店的hospitality suite现场,EPC将为工程师展示改变世界的创新应用与氮化镓(GaN)技术如何共创全新领域。基于氮化镓器件的解决方案具备更高效、更小尺寸及更低成本等优势。

宜普电源转换公司(EPC)将在2020年1月7日至10日,于美国拉斯维加斯举行的国际消费电子展(CES 2020)为工程师展示eGaN®技术的庞大潜力,它可以推动多种消费电子应用的发展,从而改变市场的游戏规则,包括全自动驾驶汽车、机器人、无人机、无线电源、世界第一流的音频系统及车载解决方案。

于CES 2020 展览,欢迎莅临Venetian酒店内的EPC演示套房,与氮化镓专家一起参观、学习及讨论氮化镓技术如何推动改变世界的创新设计的发展。

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