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影响氮化镓技术在各种电源管理应用中的快速渗透普及有哪些因素?在本文中,我们将深入探讨在过去 13 年中我司访问过、已投入批量生产的客户的反馈。
Power Electronics News
2023 年 10 月
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Gallium nitride (GaN) transistors and ICs have the best attributes to satisfy BLDC inverter needs. The superior switching capability of GaN helps to remove dead time and increase PWM frequency to obtain unmatched sinusoidal voltage and current waveforms for smoother, silent operation with higher system efficiency
Power Systems Design
May, 2023
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In this episode of The EEcosystem Podcast, our guest is Dr. Alex Lidow, CEO and co-founder of Efficient Power Conversion. In this episode, we will find out more about Alex and learn about MOSFETs and the rise of GaN. How did MOSFETs grow so quickly? What technologies are driving GaN adoptions and why. We will also discuss the potential obstacles to GaN adoption. This and many more questions will be answered as we go along! Listen to this episode to learn more!
April, 2023
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Power-conversion technologies are experiencing the first tectonic shift since the move from bipolar to MOS. That shift, of course, is due to the viral adoption of wide-bandgap power devices. At this point, GaN is more than a specialty technology; it is a broad-scale replacement for silicon MOSFETs in applications ranging from 30 V up to 650 V — a multibillion-dollar market.
Power Electronics News
December, 2022
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Continue the conversation with Guy Moxey and EPC CEO and Co-Founder Alex Lidow as they explore how GaN and Wolfspeed Silicon Carbide are changing the way we live, and where the future of these technologies could take us.
Wolfspeed
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Easy Engineering媒体采访了宜普电源转换公司(EPC)的市场营销总监Renee Yawger,了解目前氮化镓器件应用的情况和氮化镓技术的未来。
Easy Engineering
2022年5月
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我们将在本文讨论客户为何迟迟未采用氮化镓技术的一些最常见原因,氮化镓技术显然是较旧的硅基功率MOSFET的替代技术。在不深入研究详细的统计数据下,按最常发生推导出一系列原因,并理解某些应用比其他应用更侧重氮化镓技术的某些特性。我们的讨论仅限于额定电压低于400 V的器件,因为这是EPC公司的氮化镓场效应晶体管和集成电路的重点应用。
PSD功率系统设计
2022年3月
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Wide-bandgap semiconductors like gallium nitride (GaN) and silicon carbide (SiC) are changing how people are thinking about power. In this video, Electronic Design talks to Alex Lidow, Founder and CEO of Efficient Powert Conversion (EPC), about the growing role of GaN in advanced embedded applications like automotive, among others such as space.
Electronic Design
January, 2022
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The year 2021 was a transitional year in which the world decided to open its doors to GaN. In this interview with Power Electronics News during CES week, GaN industry experts confirmed that GaN is now proving its superiority over silicon.
Power Electronics News
January, 2022
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Mature, low-cost manufacturing and proven reliability spur use in EVs, smartphones, and consumer electronics.
Efficient Power Conversion (EPC) has logged more than 100 emerging applications for its eGaN FETs and ICs. Alex Lidow, the company’s CEO, said the five fastest-growing applications are lidar systems for robotics, drones, consumer products, driver alertness systems, and autonomous vehicles; DC-DC converters for AI systems, servers, and telecom power systems; motor drives for e-mobility and robotics; satellite systems, including motor drives and DC-DC power supplies that require radiation hardness; and solar power point trackers.
Semiconductor Engineering
December, 2021
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Gallium nitride (GaN) power devices have been in production for over 10 years and, beyond just performance and cost improvements, the most significant opportunity for GaN technology to impact the power conversion market comes from the intrinsic ability to integrate multiple devices on the same substrate. This capability will allow monolithic power systems to be designed on a single chip in a more straightforward, higher efficiency, and more cost-effective way.
Power Electronic News
March, 2021
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Stefan Werkstetter appointed as New Director of Sales for EMEA to focus on assisting customers in the adoption of eGaN® FETs and Integrated Circuits for applications including DC-DC, lidar, motor control, and other leading-edge power conversion systems
EL SEGUNDO, Calif. — November 2020 — To support the continued adoption of gallium nitride (GaN) FETs and Integrated Circuits in the European market, Efficient Power Conversion Corporation (EPC) is pleased to announce the appointment of Stefan Werkstetter as Director, Sales EMEA.
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就像生活要面对现实一样,老年人离开舞台而让位给年轻人,硅器件也是需要向现实低头。 随着氮化镓器件的问世和普及,正逐步淘汰旧有可靠的硅器件。 在过去的四十年中,随着功率MOSFET器件的结构、技术和电路拓扑的创新与不断增长的电力需求同步发展,电源管理的效率和成本一直以来得以稳步改善。 但是,在业界发展的新时代,随着硅功率MOSFET器件接近其理论极限,其演进速度下降了很多。 同时,新材料氮化镓的理论性能极限稳步发展,其性能极限比老化的MOSFET器件高出6,000倍,并且比目前市场上最好的氮化镓产品高出300倍。
EEWeb
2020年7 月16日
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在超过四十年中,随着功率MOSFET器件的结构、技术和电路拓扑的创新,可满足不断增长的电力需求,因此改善了电源管理的效率和成本。 然而,在这新世纪的发展,随着硅功率MOSFET器件已经接近其理论极限,其改进速度已大为减慢。 与此同时,一种全新材料 - 氮化镓(GaN)- 正朝着新的理论性能领域的方向,稳步发展,其性能是老化的MOSFET器件的6,000倍,以及是目前市场的最优越GaN器件的300倍。
EETimes
2020年6月
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中压氮化镓场效应晶体管(eGaN FET)的成本在三年前已经比等效额定功率MOSFET器件的成本更低。当时,EPC公司决心利用氮化镓场效应晶体管的性能及成本效益优势,积极研发及支持48 V输入或输出的应用。车用及计算机应用的48 V 转换逐渐成为全新的架构,也成为了功率系统的全新标准。
Power Systems Design
2020年3月31日
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宜普电源转换公司首席执行官Alex Lidow 在是次硏讨会讨论氮化镓技术如何大大改善系統的效率、尺寸及成本,从而加快磁共振及AirFuel共振技术的普及。
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This article discussed an oft forgotten or little-noticed part of the spacecraft enabling travel into outer space---power management in the space vehicle. Wide bandgap semiconductors like gallium nitride (GaN), silicon carbide (SiC), as well as diamond, are looking to be the most promising materials for future electronic components since the discovery of silicon. These technologies, depending upon their design, offer huge advantages in terms of power capability (DC and microwave), radiation insensitivity, high temperature and high frequency operation, optical properties and even low noise capability. Therefore, wide bandgap components are strategically important for the development of next generation space-borne systems. eGaN devices are quickly gaining momentum in the space industry and we will see many more applications for them by NASA and commercial contractors in future programs like Artemis and other programs in countries around the globe pursuing efforts into Space.
Power Systems Design
November, 2019
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氮化镓(GaN)及碳化硅(SiC)器件的价格下调,对客户而言,更为吸引。多家供应商推出基于氮化镓及碳化硅的功率半导体,摩拳擦掌,正在爆发新一轮的半导体大战,全速进攻传统硅基器件的市场份额。
Semiconductor Engineering
2019年10月
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From the heart of Silicon Valley comes a new buzzword. Gallium nitride is the future of power technology. Tech blogs are touting gallium nitride as the silicon of the future, and you are savvy enough to get in on the ground floor. Knowing how important gallium nitride is makes you a smarter, better consumer. You are at the forefront of your peer group because you know of an up and coming technology, and this one goes by the name of gallium nitride.
HACKADAY
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This year’s PCIM Europe was attended by a record number of visitors, over 12,000. Over half (54%) were from outside Germany. They came to see over 500 exhibitors and while the subject matter was diverse and wide-ranging, there were some themes that emerged. GaN and SiC jostled for attention at this year’s PCIM Europe. Showing the potential that GaN has already realised, Efficient Power Conversion (EPC) had a stand that was well-stocked with examples of the eGaN FET technology that the company introduced in 2009.
Electronic Specifier
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