A few simple thermal management guidelines can help conduct heat away from GaN FETs. Enhancement-mode gallium nitride (eGaN) FETs offer high power-density with ultra-fast switching and low on-resistance, all in a compact form factor. However, the power levels these high-performance devices provide can be limited by extreme heat-flux densities. If not managed properly, the generated heat can compromise reliability and performance. Fortunately, chip-scale packaging for eGaN FETs can be leveraged at the board-side and the backside (i.e., case) to better dissipate heat.

Power Electronics Tips
February, 2022
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从2010年3月起，氮化镓（GaN）功率器件已经实现高可靠性并进行量产。本章详细阐析如何测试出器件在何时开始失效，从而了解数据手册给出的器件工作条件，距离其工作极限值还有多少余量。而最重要的是，找出器件固有的失效机理，了解其失效的根本原因、恒常操作情况、温度、电气应力或机械应力等，从而找出产品在一般工作条件下，它的安全使用寿命。

Power Systems Design
2020年3月
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