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硅片已死……分立功率器件快将消失

硅片已死……分立功率器件快将消失

在超过四十年中,随着功率MOSFET器件的结构、技术和电路拓扑的创新,可满足不断增长的电力需求,因此改善了电源管理的效率和成本。 然而,在这新世纪的发展,随着硅功率MOSFET器件已经接近其理论极限,其改进速度已大为减慢。 与此同时,一种全新材料 - 氮化镓(GaN)- 正朝着新的理论性能领域的方向,稳步发展,其性能是老化的MOSFET器件的6,000倍,以及是目前市场的最优越GaN器件的300倍。

EETimes
2020年6月
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Go-Ahead for GaN

Go-Ahead for GaN

Smaller, faster, lower cost, and more integrated, GaN-on-Silicon devices have the confidence of designers across a spectrum of power conversion applications. In this article, Alex Lidow explains why it’s getting harder to avoid using GaN power transistors and ICs.

Electronic Specifier
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Podcast: Moore's Law and GaN

Podcast: Moore's Law and GaN

Alex Lidow has deep roots in the electronics industry. His father and grandfather founded International Rectifier in 1947. Alex eventually ran the company himself for 12 years. He is currently the CEO of EPC, a company that manufactures gallium nitride-based power transistors and integrated circuits. These products are now found in lidar systems for autonomous vehicles, in 4G/LTE base stations, in DC-DC converters for servers and satellites, and in a wide variety of medical products.

EE Times on Air
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氮化镓正面攻击硅功率MOSFET器件

氮化镓正面攻击硅功率MOSFET器件

目前的氮化镓场效应晶体管在尺寸及性能方面以飞快的速度发展,而目前为业界树立基准的氮化镓器件的性能还可以提升多300倍。

最早采用氮化镓器件的应用是利用氮化镓的超快速开关速度,例如面向全自动驾驶汽车和无人机的激光雷达系统、机械人,以及4G/LTE基站。氮化镓器件的产量一直在增加,而其价格跟开关速度更慢、尺寸更大型和日益陈旧的MOSFET器件相约。因此,目前正是氮化镓器件正面攻击MOSET的时候!。

Bodo’s Power System
2019年6月
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PSDtv - EPC on Why Silicon is Dead at APEC 2019

PSDtv - EPC on Why Silicon is Dead at APEC 2019

In this episode of PSDtv Alex Lidow, Chief Executive Officer and Co-Founder of Efficient Power Conversion (EPC) is at APEC 2019 in Anaheim and discusses why their GaN on Silicon devices make Silicon now dead.

PSDtv
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一位科学家的自述:曾为世界节省15%的电量,如今找到硅的替代物

一位科学家的自述:曾为世界节省15%的电量,如今找到硅的替代物

这位在40年前成为博士的科学家曾为世界节省了15%电量,如今他正继续自己的创新之旅,为人类找到了硅的全新替代材料。

我父亲常常教导我:一个人的真正价值,是通过他对社会所作出的贡献来衡量的。1975年我进入研究生院学习,那时我的兴趣在半导体领域,并且认为我对社会最大的贡献,就是找到可以替代硅的半导体材料。我的研究生毕业课题从围绕砷化镓展开,但是直到在1977年获得博士学位后,我才发现,作为一种半导体材料,砷化镓受其基本材料特性所影响,它的应用前景非常有限,于是我转而专注于研究如何制造出更好的硅基器件。

财富中文网 (Fortune China)
2017年6月15日
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硅基氮化镓功率器件如何把硅基功率MOSFET逐出市场

硅基氮化镓功率器件如何把硅基功率MOSFET逐出市场

氮化镓(GaN)功率晶体管专为高效电源转换而设计,投产已经有7年了。由于氮化镓器件具备优越的开关速度,因此它推动了新兴市场的发展,例如激光雷达、包络跟踪及无线充电市场。 这些市场使得氮化镓产品得以大量投产、实现低生产成本及高可靠性。 这些优势对于就算是比较保守的设计工程师来说,都是十分吸引的,使得他们在诸如DC/DC转换器、AC/DC转换器及汽车应用中,开始了对氮化镓器件进行评估。那么,目前120亿美元的硅基功率MOSFET市场在转为氮化镓晶体管市场的过程中,还有什么阻力吗?信心。

Alex Lidow
2017年3月
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硅器件的竞争对手悄悄走进面向Apple、Google及Tesla的半导体市场

硅器件的竞争对手悄悄走进面向Apple、Google及Tesla的半导体市场

人们用硅材料命名了“硅谷”,而硅材料现正面对全新并具有潜力的竞争对手 – 氮化镓(GaN)材料。有说氮化镓器件可以取得300亿美元的半导体电源供应产业的市场份额。这个市场涵盖了所有利用墙上的电源插座取得电源的产品—从Apple(AAPL)的iPhone充电器,以至Tesla(TSLA)的豪华电动汽车。

Investor's Business Daily
Allison Gatlin
2016年7月
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A Silicon Pioneer Plays Taps for Silicon and Power Cords

A Silicon Pioneer Plays Taps for Silicon and Power Cords

Tuesday I was fortunate enough to have a meeting with Alex Lidow, founder of chip company EPC of El Segundo, California, and something of an luminary of the chip world. Lidow came up with the “power MOSFET,” a device that went on to be the basis of billions in semiconductor sales, in 1977.

His new company, whose initials stand for “Efficient Power Conversion,” proposes replacing silicon, the original basis of the MOSFET, and one of the most prevalent types of semiconductor around, with a different material, Gallium Nitride, commonly abbreviated as GaN — or “eGaN,” as Lidow calls the company’s new, improved form of GaN.

Barron's
Tiernan Ray
June 29, 2016
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eGaN vs. Silicon - Comparing Dead-time Losses for eGaN FETs and Silicon MOSFETs in Synchronous Rectifiers

eGaN vs. Silicon - Comparing Dead-time Losses for eGaN FETs and Silicon MOSFETs in Synchronous Rectifiers

There have been several comparisons of eGaN FETs with silicon MOSFETs in a variety of applications, including hard-switched, soft-switched, and high-frequency power conversion. These studies have shown that eGaN FETs have large efficiency and power density advantages over silicon MOSFETs. Here we’ll focus on the use of eGaN FETs in synchronous rectifier (SR) applications and the importance of dead-time management. We show that eGaN FETs can dramatically reduce loss due to dead-time in synchronous rectifiers above and beyond the benefits of low RDS(on)and charge.

Power Systems Design
By: Dr. John Glaser & Dr. David Reusch, Efficient Power Conversion
June 13, 2016
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Paultre on Power - Power GaN

作者 :Alix Paultre
杂志 :Power Systems Design

这个podcast的内容是关于我们与宜普电源转换公司Alex Lidow的谈话内容,Alex主要分享全新氮化镓器件的技术及它们对电源业界的影响。宜普公司是基于增强型氮化镓的电源管理器件的领先供货商,为首家公司推出替代功率MOSFET的硅基增强型氮化镓(eGaN)场效应晶体管,应用范围包括负载点转换器、以太网供电、服务器、计算机应用的直流-直流转换器、LED高效照明、移动电话、射频传送、太阳能微型逆变器及D类音频放大器,器件性能比最好的硅功率MOSFET高出很多倍。详情请浏览http://www.powersystemsdesign.com/paultre-on-power---power-gan?a=1&c=6282

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氮化镓晶体管已经准备好在这个黄金时间抢攻市场吗?

作者:宜普公司首席执行官Alex Lidow博士
日期:在2012年7月2日刊载于Power Pulse.Net网站

大约在2005年Eudyna 与Nitronex首次推出耗尽型射频晶体管时,氮化镓晶体管已经出现。之后有很多新的公司加入引进射频晶体管(如RFMD, Triquint, Cree, 飞思卡尔, Integra, HRL, M/A-COM及其它公司),以及在电源转换应用为替代功率MOSFET而设计的晶体管(如Transphorm, 国际整流器公司, GaN Systems, microGaN及宜普电源转换公司)。本论文主要在讨论这个热闹的科研现象是代表氮化镓晶体管已经准备好替代功率MOSFET吗?如果是,原因是什么呢?

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Alex Lidow, CEO, interviewed in ECN's Tinker’s Toolbox

Alex Lidow is interviewed by ECN's Editorial Director, Alix Paultre, on the Tinker's Toolbox, ECN's audio interview website.  The interview explores the attributes of GaN technology, applications opened as a result of GaN's superior performance to MOSFETs and reasons for the take-up of eGaN FET products over the past year.

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Can Gallium Nitride Replace Silicon?

For the past three decades, Silicon-based power management efficiency and cost have shown steady improvement. In the last few years, however, the rate of improvement has slowed as the Silicon power MOSFET has asymptotically approached its theoretical bounds. Gallium Nitride grown on top of a silicon substrate could displace Silicon across a significant portion of the power management market.

By Alex Lidow, PhD
Power Electronics Europe
Issue 2, 2010

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