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根据将氮化镓和碳化硅材料的电子从价带转移到导带所需的能量，氮化镓和碳化硅器件被指定为宽带隙 (WBG) 半导体——碳化硅器件约为 3.2 eV，氮化镓器件则约为 3.4 eV，而硅器件只有1.1 eV 。WBG 的击穿电压更高，在某些应用中可以达到 1,700 V。 在今年 5 月举行的线上PCIM Europe展会上，几家公司展示了他们在 氮化镓和碳化硅技术方面的最新创新，并就 WBG 技术的发展方向分享了其独特见解。
EE Times – Europe
2021 年 7 月
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Based on the authors' years of extensive experience, this is an authoritative overview of Wide Bandgap (WBG) device characterization.
EL SEGUNDO, Calif. – September 2018 – Efficient Power Conversion Corporation (www.epc-co.com) announces the publication by the Institution of Engineering and Technology of Characterization of Wide Bandgap Power Semiconductor Devices co-authored by EPC Senior Applications Engineer, Dr. Edward A. Jones. This textbook provides essential tools to assist researchers, advanced students, and practicing engineers in performing both static and dynamic characterization of WBG devices, particularly those based on using silicon carbide (SiC) and gallium nitride (GaN) power semiconductors. The book presents practical considerations for real applications and includes examples of applying the described methodology.
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Wide-bandgap materials, such as GaN and SiC, are enabling a new generation of power switching devices that switch faster and with fewer losses than the venerable silicon MOSFET, resulting in smaller, more efficient power supplies.
By Margery Conner
EDN
August 25, 2011
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