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宜普电源转换公司首席执行官兼共同创办人Alex Lidow表示，GaN的成本竞争力亦与Si MOSFET并驾齐驱，潜在爆发力更有过之而无不及，目前最关键就是得重塑诸多研究者的老旧观念，认为GaN昂贵到碰不得。GaN的技术正迎来转捩点，在先进运算、车用电子、太空电子及消费电子等新型应用设计多数采GaN技术，而非Si MOSFET……
DIGITIMES Asia
2023年9月
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Efficient Power Conversion (EPC) strengthens market leadership in gallium nitride power conversion by adding significant 8-inch manufacturing capacities in collaboration with Vanguard International Semiconductor Corporation (VIS).
EL SEGUNDO, Calif.— December 6, 2022 — EPC, the world’s leader in gallium nitride (GaN) power FETs and integrated circuits (ICs), and Vanguard International Semiconductor Corporation (VIS), a leading specialty IC foundry service provider, today jointly announced a multi-year production agreement to produce gallium nitride-based power semiconductors. EPC will utilize VIS’ 8-inch (200 mm) wafer fabrication capabilities, significantly increasing manufacturing capacities for EPC’s high-performance GaN transistors and integrated circuits. Manufacturing will commence in early 2023.
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The ultimate aim of Artificial Intelligence is to provide machines the ability to operate autonomously. One such area which is projected to grow exponentially over the next decade is Autonomous Vehicles. With Artificial Intelligence coupled with the rapid advances in electronics and computer technology, the word driverless will soon take over the roads.
AI Time Journal
October, 2020
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Based on the authors' years of extensive experience, this is an authoritative overview of Wide Bandgap (WBG) device characterization.
EL SEGUNDO, Calif. – September 2018 – Efficient Power Conversion Corporation (www.epc-co.com) announces the publication by the Institution of Engineering and Technology of Characterization of Wide Bandgap Power Semiconductor Devices co-authored by EPC Senior Applications Engineer, Dr. Edward A. Jones. This textbook provides essential tools to assist researchers, advanced students, and practicing engineers in performing both static and dynamic characterization of WBG devices, particularly those based on using silicon carbide (SiC) and gallium nitride (GaN) power semiconductors. The book presents practical considerations for real applications and includes examples of applying the described methodology.
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