EPC推出采用紧凑型QFN封装(3 mm x 5 mm)的100 V、1 mOhm GaN FET(EPC2361)，助力DC/DC转换、快充、电机驱动和太阳能 MPPT等应用实现更高的功率密度。

2024年2月27日—全球增强型氮化镓(GaN)功率 FET 和 IC领域的领导者宜普电源转换公司（EPC）推出 100 V、1 mOhm EPC2361。这是市场上具有最低导通电阻的GaN FET，与EPC的上一代产品相比，其功率密度提高了一倍。

EPC GaN FET与Analog Devices驱动器和控制器相结合，为客户简化氮化镓基设计、提高其效率、降低散热成本、助力计算、工业和消费类应用的DC/DC转换器实现最高功率密度。

宜普电源转换公司（EPC ）宣布推出采用 EPC GaN FET 和 Analog Devices, Inc. (ADI) 控制器的各种参考设计。

As the revolution of renewable energy as well as transportation electrification progresses, the need for residential energy storage systems is increasing. A high efficiency DC-to-DC converter is usually required to exchange energy generated from renewable sources, such as solar panels, with a battery. The fast-switching speed and low R_DS(on) of gallium nitride (GaN) FETs can help save energy by reducing power consumption inside the DC-to-DC converter. This article shows how to design a high efficiency 100 – 250 V to 40 - 60 V DC-to-DC converter.

Power Electronics Europe
May, 2023
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Efficient Power Conversion (EPC) expands its family of radiation-hardened (rad-hard) gallium nitride (GaN) products for power conversion solutions with two new 40 V devices rated at 62 A and 250 A to address critical spaceborne and other high-reliability applications.

EL SEGUNDO, Calif.— July 2023 — EPC announces the introduction of two new 40 V rated radiation-hardened GaN FETs.EPC7001 is a 40 V, 4 mΩ, 250 A_Pulsed, rad-hard GaN FET in a small 7 mm² footprint. EPC7002 is a 40 V, 14.5 mΩ, 62 A_Pulsed, rad-hard GaN FET in a tiny 1.87 mm² footprint.  Both devices have a total dose radiation rating greater than 1,000K Rad(Si) and SEE immunity for LET of 83.7 MeV/mg/cm² with V_DS up to 100% of rated breakdown. These new devices, along with the rest of the Rad Hard family, are offered in a chip-scale package.  Packaged versions are available from EPC Space.

宜普电源转换公司(EPC) 扩展了其封装兼容的ePower™ IC系列，提高功率密度和简化设计以满足DC/DC应用、电机驱动器和D类音频放大器的不同功率要求。

继早前推出的100 V、35 A功率级IC（EPC23102）之后，EPC公司新推两款新型100V功率级IC，其额定电流分别为15A(EPC23104)和25A(EPC23103)。

With the increase in government mandates to combat climate change, automakers are moving quickly to leverage new technology to respond by switching from the internal combustion engine to electric-drive vehicles. This article presents the design of a 2 kW, two-phase 48 V/12 V bi-directional converter using GaN FETs that achieves 96% efficiency and is targeted for the 48 V mild hybrid system.

PSD North America
March, 2023
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An exploration of a GaN-based design of a 2 kW 48V/12V bi-directional power module for 48 V mild hybrid electric vehicles.

Electronics Today
January, 2023
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宜普电源转换公司（EPC）和立锜科技（Richtek）携手推出新型快充参考设计，使用RT6190降压-升压控制器和氮化镓场效应晶体管EPC2204，可实现超过98%的效率。

宜普电源转换公司和立锜科技宣布推出4开关双向降压-升压控制器参考设计，可将12 V~24 V的输入电压转换为5 V~20 V的稳压输出电压，并提供高达5 A的连续电流和6.5 A的最大电流。与高功率密度应用的传统解决方案相比，新型RT6190控制器与EPC的超高效氮化镓场效应晶体管EPC2204相结合，使得解决方案尺寸可缩小20%以上，而且在20 V和12 V输出电压下，可实现超过98%的效率。在不需使用散热器和5 A连续电流下，20 V转5 V的最大升温低于摄氏15度，而12 V转20 V的最高升温则低于摄氏55度。

Efficient Power Conversion (EPC) introduces the 80 V, 4 mOhm EPC2619 GaN FET in tiny 1.5 mm x 2.5 mm footprint, offering higher performance and smaller solution size than traditional MOSFETs for high power density applications, including DC-DC conversion, motor drives, and synchronous rectification for 12 V – 20 V.

EL SEGUNDO, Calif.— November 2022 — EPC, the world’s leader in enhancement-mode gallium nitride (GaN) power FETs and ICs, launches the 80 V, 4 mOhm EPC2619. This is the lead product for a new generation of eGaN devices that have double the power density compared to EPC’s prior-generation products.

EPC’s inverter reference design is based around a GaN chip to reduce powertrain sizes

E-mobility Engineering
September, 2022
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宜普电源转换公司（EPC）推出ePower™功率级集成电路，它集成了整个半桥功率级，可在1 MHz工作时实现高达35 A的输出电流，为高功率密度应用提供更高的性能和更小型化的解决方案，包括DC/DC转换、电机驱动和D类音频放大器等应用。

宜普电源转换公司（EPC）宣布推出100 V、35 A的集成电路，专为48 V DC/DC转换而设计，用于高密度计算应用和面向电动汽车、机器人和无人机的48 V BLDC电机驱动器。

EPC23102 eGaN集成电路可实现100 V的最大耐受电压、实现高达35 A的负载电流和高于1 MHz的开关速度。

宜普电源转换公司(EPC)扩展了其耐辐射氮化镓产品系列，新推的100 V产品用于要求严格的机载和其他高可靠性环境下的电源转换解决方案，进一步为这个产品系列添加第五个成员。

EPC公司宣布推出100 V、7 mΩ、160 A_Pulsed的耐辐射GaN FET EPC7004。尺寸小至6.56 mm²，其总剂量等级大于1 Mrad，线性能量转移（LET）的单一事件效应（SEE）抗扰度为85 MeV/(mg/cm²)。EPC7004与EPC7014、EPC7007、EPC7019和EPC7018器件都是采用芯片级封装，这与其他商用的氮化镓场效应晶体管（eGaN^® FET）和IC相同。封装器件将由EPC Space提供。

本文介绍了基于氮化镓器件、具有120 VDC输入电压、工作频率为 6.7 MHz 的两相 DC/DC转换器。 120 VDC 是国际太空站 (ISS) 二次电路系统中的标准电压水平。

使用具备高功率密度和开关超快等优势的GaN FET ，Tell-I 公司新开发的 SDK 电路板使用两相来超越正常的开关速度。 多相配置支持用于 ISS 等系统的标准120-V 总线电压，让交错转换器在 3 MHz、5 MHz 和 6.87 MHz 下实现高效开关。使用四个 EPC2019 GaN FET和支持小型栅极驱动及功率环路的两个 LMG1210 栅极驱动器，可实现最佳和紧凑的布局。

Power Electronics News
2022年4月
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氮化镓功率晶体管EPC2050专为功率系统设计人员而设计，在极小的芯片级封装中，实现 350 V、80 mΩ 最大 R_DS(on)和26 A 峰值电流，是多电平转换器、电动汽车充电、太阳能逆变器、激光雷达和 LED 照明的理想器件。

宜普电源转换公司（EPC）宣布推出 EPC2050，这是一款 350 V GaN 晶体管，最大 RDS(on) 为 80 mΩ，脉冲输出电流为 26 A。 EPC2050 的尺寸仅为 1.95 mm x 1.95 mm，与采用等效硅器件的解决方案相比，基于EPC2050的解决方案的占板面积小十倍。

EPC公司和ADI公司推出参考设计，采用全面优化的新型模拟控制器来驱动EPC公司的氮化镓场效应晶体管(GaN FET)。新型模拟LTC7890同步氮化镓降压控制器与EPC公司的超高效eGaN^® FET相结合，可实现高达2 MHz的开关频率，从而实现高功率密度和低成本的DC/DC转换。

宜普电源转换公司（EPC）宣布推出EPC9160，这是一款双输出同步降压转换器参考设计，开关频率为2 MHz，可将9 V~24 V的输入电压转换为3.3 V或5 V的输出电压，两个输出的连续电流可高达15 A。由于开关频率高，转换器的尺寸非常小，两个输出都只有23 mm x 22 mm和电感器的厚度只有3 mm。

由氮化镓技术专家 EPC 与 MPS 合作开发的双向转换器可实现97%的峰值效率。

EETimes
2022年2月
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Demonstrating the design of a bi-directional DC-DC converter for automotive 48 V power distribution, showing how GaN technology is a powerful enabler for efficient electrification. The trend towards increasing electrification in the automotive industry enables car makers both to deliver new innovations to market cost-effectively and to meet increasingly stringent emissions legislation. Raising the vehicle’s main bus voltage to 48 V helps meet the demands of power-hungry systems such as the start-stop motor/generator of a mild hybrid vehicle, as well as loads such as electric power steering, electric supercharging, and vacuum and water pumps.

Bodo’s Power Systems
December, 2021
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EPC9163是一款两相48 V/12 V双向转换器，可提供2 kW的功率和实现96.5%的效率，是适用于轻度混合动力汽车和备用电池装置的小型化解决方案。

宜普电源转换公司（EPC）宣布推出EPC9163，这是一款 2 kW、两相的48 V /12 V双向转换器演示板，可在非常小的占板面积上实现 96.5%的效率。该演示板的设计具有可扩展性 - 并联两个转换器可以实现4 kW的功率，或者并联三个转换器以实现6 kW。该板采用8个100 V 的eGaN^® FET（EPC2218），并由模块控制，该模块采用Microchip公司的dsPIC33CK256MP503 16位数字控制器。

EL SEGUNDO, Calif. — December 2020 — BrightLoop Converters has greatly reduced the size, cost and improved reliability of its latest BB SP DC-DC buck converters thanks to Efficient Power Conversion Corporation’s (EPC) EPC2029 enhancement-mode gallium nitride (eGaN^®) FET transistors. By switching from silicon (Si) transistors to gallium nitride (GaN), BrightLoop was able to increase the switching frequency of their design from 200 kHz to 600 kHz, while keeping the same efficiency. This design change increased the power density of the solution by a factor of approximately two and this resulted in lower cost by enabling the implementation of a smaller enclosure.

EPC’s EPC2029 is an 80 V, 48 A eGaN^® FET featuring a 1 mm ball pitch. The wider pitch allows for placement of additional and larger vias under the device to enable high current carrying capability despite the extremely small 2.6 mm x 4.6 mm footprint.

Over the past decade computers, displays, smart phones and other consumer electronics systems have become thinner while also becoming more powerful. As a result, the market continues to increase its demand for thinner power supply solutions with greater power density. This article examines the feasibility of adopting various non-isolated dc-dc stepdown topologies for an ultra-thin 48-V to 20-V, 250-W power solution.

How2Power
May, 2020
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