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Profiles in Design: Alex Lidow, Ph.D.

DesignCon 2015’s Thursday (January 29th) keynote speaker will be Dr. Alex Lidow, CEO and co-founder of Efficient Power Conversion Corporation (EPC). For most of his career, Alex has focused on improving the efficiency of power conversion in hopes of reducing the environmental impact of energy production and consumption. As an R&D engineer at International Rectifier, he co-invented the HEXFET power MOSFET. The patents from this invention brought in more than $900M. Alex holds numerous additional patents in power semiconductor technology, including basic patents in power MOSFETs as well as in GaN FETs. He recently co-authored the first textbook on GaN transistors, “GaN Transistors for Efficient Power Conversion”. You can catch Alex’s keynote speech at DesignCon 2015 on Thursday, January 29, 12:00 PM – 12:30 PM.

EDN
December 3, 2014
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IEEE Power Electronics Society (PELS) Webinar, “Using Gallium Nitride (GaN) FETs for Envelope Tracking Buck Converters”

On September 3rd IEEE PELS will offer a webinar by Dr. Johan Strydom discussing the contribution of gallium nitride power transistors to meet the demanding system bandwidth requirements of envelope tracking applications.

EL SEGUNDO, Calif.— August 2014 — An Efficient Power Conversion Corporation (EPC) expert on the application of gallium nitride transistors in envelope tracking power circuit design will conduct a one-hour webinar sponsored by the IEEE Power Electronics Society (PELS) on September 3rd from 11:00 AM to 12:00 AM (EDT).

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Efficient Power Conversion Corporation CEO Alex Lidow to speak at Credit Suisse "Future of Semiconductors" investor conference

EL SEGUNDO, Calif.—May, 2012 — Efficient Power Conversion Corporation (EPC) CEO Alex Lidow will speak at the private Credit Suisse investor conference in San Francisco on Tuesday, May 22, at 10:00 a.m. Pacific time. Dr. Lidow will discuss the growing market for gallium nitride transistors with a focus on EPC’s eGaN® FET technology and products. As a displacement technology, GaN FETs can be used in an array of current MOSFET applications in addition to enabling new high volume applications, such as wireless power and envelope tracking, a method for significant energy savings in communication devices.

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