Growing computational power and miniaturization of electronics in computing and data centers is increasingly putting pressure on 48-V power delivery and conversion systems. High-efficiency and high-power–density converters enable a reduction in power losses at the system level while allowing smaller form factors. In this context, LLC resonant topologies combined with GaN technology succeed to deliver outstanding performance, as it has been demonstrated with multiple examples. This article will show the key design parameters and components to achieve beyond 4 kW/in3 of power density in a 48-V to 12-V LLC converter using eGaN^® FETs.

Power Electronics News
December, 2022
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GaN devices have gone from initial R&D to mainstream designs over the last 15 years. Unfortunately, there are many misunderstandings left-over from those early-stage bipolar drive circuit developments or dead-end technology branches. One of the most pernicious is the topic of bipolar drive. In actuality, unipolar drives are the best way to drive eGaN^® FETs.

Power Electronics Tips
October, 2022
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One way to tell when a new technology has passed the tipping point of adoption is by the voices advocating the status quo. The more conservative voices tend to cite older information that, given the fast change of trajectory that occurs at a tipping point, can lead to poor decisions for new designs. In the world of GaN power devices the tipping point occurred in the past two years when the rate of new GaN-based designs started to double year-on-year, and the legacy MOSFET designs started to face critical supply shortages due to their finely tuned, but less flexible supply chains. GaN devices, on the other hand, have remained in stock at most major distributors due to their relatively new and flexible supply chains utilizing older silicon foundries, but affording these foundries a new and vibrant future. In this article we will address some of the common misconceptions still showing up in articles and at conferences, usually presented by advocates of the status quo.

Bodo’s Power Systems
May, 2022
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我们将在本文讨论客户为何迟迟未采用氮化镓技术的一些最常见原因，氮化镓技术显然是较旧的硅基功率MOSFET的替代技术。在不深入研究详细的统计数据下，按最常发生推导出一系列原因，并理解某些应用比其他应用更侧重氮化镓技术的某些特性。我们的讨论仅限于额定电压低于400 V的器件，因为这是EPC公司的氮化镓场效应晶体管和集成电路的重点应用。

PSD功率系统设计
2022年3月
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A few simple thermal management guidelines can help conduct heat away from GaN FETs. Enhancement-mode gallium nitride (eGaN) FETs offer high power-density with ultra-fast switching and low on-resistance, all in a compact form factor. However, the power levels these high-performance devices provide can be limited by extreme heat-flux densities. If not managed properly, the generated heat can compromise reliability and performance. Fortunately, chip-scale packaging for eGaN FETs can be leveraged at the board-side and the backside (i.e., case) to better dissipate heat.

Power Electronics Tips
February, 2022
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Efficient Power Conversion (EPC) publishes Phase-14 Reliability Report, which adds to the extensive knowledge and demonstrates a robustness capability unmatched by silicon power devices.

EL SEGUNDO, Calif.— February 2022 — EPC announces its Phase-14 Reliability Report, documenting the strategy used to achieve a remarkable field reliability record. The rapid adoption of GaN devices in many diverse applications calls for the continued accumulation of reliability statistics and research into the fundamental physics of failure in GaN devices. The Phase-14 Reliability Report presents the strategy used to measure and predict lifetime based upon tests that force devices to fail under various conditions. This information can be used to create more robust and and higher performance products for applications such as lidar for autonomous cars, robotics, security, and drones, high power density computing, and satellites, to name just a few.

EPC9170演示板是一款两相、可调输出电压的48 V/14 V双向转换器，提供2 kW功率和实现96.8 %峰值效率。

宜普电源转换公司（EPC）宣布推出EPC9170演示板，这是一款2kW、两相48 V /14 V双向转换器，在小尺寸内实现96.8%的峰值效率。该板采用100 V、65 A 的ePower™集成电路芯片组，包含EPC23101 eGaN^® IC和EPC2302 eGaN^® FET，可实现的解决方案的最大电压为100 V、负载电流可高达65 A和开关频率可超过1 MHz。

In the field of motion control, there is a growing use of GaN devices, especially in low voltage applications. This paper provides guidelines for designers on the optimal use of GaN FETs in motor control applications, identifying the advantages and discussing the main issues.

Energies Journal
October, 2021
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The EPC9145 GaN-based inverter enhances the performance of the motor for range, precision, torque, and, as a bonus, eliminates the electrolytic capacitors for lower overall system cost and higher reliability. The extremely small size allows integration into the motor housing for the lowest EMI, highest density, and lowest weight.

EL SEGUNDO, Calif.— November, 2021 — EPC announces the availability of the EPC9145, a 1 kW, 3-phase BLDC motor drive inverter using the EPC2206 eGaN^® FET

EPC9163是一款两相48 V/12 V双向转换器，可提供2 kW的功率和实现96.5%的效率，是适用于轻度混合动力汽车和备用电池装置的小型化解决方案。

宜普电源转换公司（EPC）宣布推出EPC9163，这是一款 2 kW、两相的48 V /12 V双向转换器演示板，可在非常小的占板面积上实现 96.5%的效率。该演示板的设计具有可扩展性 - 并联两个转换器可以实现4 kW的功率，或者并联三个转换器以实现6 kW。该板采用8个100 V 的eGaN^® FET（EPC2218），并由模块控制，该模块采用Microchip公司的dsPIC33CK256MP503 16位数字控制器。

50 W、12 V/60 V且基于eGaN^® FET的同步升压转换器采用简单、低成本的拓扑结构，可实现 95.3%的峰值效率和低温升。

宜普电源转换公司（EPC）宣布推出双向降压或反向升压转换器演示板（EPC9162）。该演示板用于同步转换器时采用100 V的EPC2052器件，以及用于同步自举FET电路时，采用EPC2038器件。

This month has been a busy one in the FET space. Here are a few FETs from EPC, UnitedSiC, and Intel that depart from traditional silicon transistors in interesting ways.

All About Circuits
October, 2021
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The design of an LLC resonant converter illustrates how eGaN FETs can shrink the physical size of modern supply circuitry.

Power Electronic Tips
October, 2021
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GaN devices and applications, such as lidar, DC-DC conversion, motor drive, and low-cost satellites using gallium nitride FETs and ICs, form the focus of this book, GaN Power Devices and Applications.

EL SEGUNDO, Calif. — October 2021 — Efficient Power Conversion Corporation, the world’s leader in enhancement-mode gallium nitride on silicon (eGaN) power FETs and ICs, announces the publication of a valuable learning resource for professional engineers, systems designers, and electrical engineering students seeking the latest information on gallium nitride technology and applications. 

在过去十年中，计算机、显示器、智能手机和其他消费电子系统变得更薄，同时功能也变得更强大。因此，市场对具有更高功率密度的更纤薄电源解决方案的需求不断增加。本文研究了额定功率为 250 W且超薄的48 V / 20 V转换器，它可以采用各种非隔离型 DC/DC 降压拓扑的可行性。我们研究了各种非隔离型拓扑的优缺点，从而了解拓扑如何影响功率晶体管和磁性元件的选择，特别是电感器，因为这两个器件产生转换器的大部分损耗。本文还详细分析了为这些应用设计薄型电感器所面对的挑战，包括电感器损耗的因素、电感器尺寸和设计权衡，包括对 EMI 的影响。我们是以选择、构建和测试了超薄多电平转换器拓扑。从该转换器获得的实验结果，用于进一步优化操作设置和元件的选择，从而实现超过 98%的峰值效率。

EPC公司Michael de Rooij
Würth Elektronik 公司Quentin Laidebeur

IEEE Power Electronics Magazine
2021年９月
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随着数据处理基础设施的持续快速增长，市场要求在最小的占板面积内提供更高的功率。

Power Systems Design
2021年9月
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EPC9137是一款两相的48 V/12 V双向转换器，以小型化解决方案提供1.5 kW功率，效率为97%，适用于轻度混合动力汽车和电池电源备用装置。

宜普电源转换公司（EPC）宣布推出EPC9137，这是一款1.5 kW的两相48 V/12 V双向转换器，占板面积小，效率为97%。该演示板的设计是可扩展的–并联两个转换器可实现3 kW，或者并联3个转换器可实现4.5 kW。该板使用4个100 V的eGaN^®FET（EPC2206），并由一个包括Microchip dsPIC33CK256MP503 16位数字控制器的模块控制。

最近，EPC公司对其氮化镓场效应晶体管（eGaN FET）进行了一系列测试，把它置于超出数据手册的限值下工作，从而量化和发表这些器件通过电压和电流极端应力测试的结果。

Bodo’s Power Systems
2021年5月
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宜普电源转换公司（EPC）推出首个氮化镓（GaN）集成电路（IC）系列，实现性能更高、更小巧且采用飞行时间（ToF）技术的激光雷达应用，包括机器人、无人机、3D传感器和自动驾驶汽车等应用。

宜普电源转换公司（EPC）宣布推出激光驱动器IC(EPC21601)，在单个芯片上集成了40 V、10 A 场效应晶体管、栅极驱动器和3.3 V逻辑电平输入，面向飞行时间（ToF）激光雷达系统，用于机器人、监控保安系统、无人机、全自动驾驶汽车和吸尘器。

This article discusses the challenges that thermal management raises due to increase power density, especially with chip-scale packaging (CSP). What is sometimes overlooked, however, is that CSP eGaN® power FETs and integrated circuits have excellent thermal performance when mounted on standard printed circuit board (PCBs) with simple methods for attaching heat sinks. Simulations, supported by experimental verification, examine the effect of various parameters and heat flow paths to provide guidance on designing for performance versus cost.

Bodo’s Power Systems
February, 2021
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