Bringing GaN to the final frontier, EPC Space introduced two new radiation-hardened GaN transistors for high-current switching in space-based applications. As the number of commercial satellites continues to increase, designers require more options for space-ready power electronics with improved current handling.

All About Circuits
September, 2023
Read article

As more processing power and more complex loads are placed on-orbit or into deep space missions, it is sometime necessary to parallel two or more power switches. However, conventional power device packages, such as the FSMD-A/B/C/D and their I/O pad provisioning make it difficult to accomplish paralleling these devices in a performance-conscious manner. When paralleled, the gate and source-sense pads on these packages either serve to block the most efficient/shortest interconnect from package-to-package for the drain and source connections or for the gate and source-sense pads. So in parallel configurations, there is always a compromise between optimized drain-source load-circuit performance and gate-source-sense drive-loop performance. This article introduces the FSMD-G discrete HEMT package and explains how the reconfiguration of its I/O pads overcomes these limitations when paralleling GaN HEMTs.

How2Power
September, 2023
Read article 阅读全文

EPC Space has introduced radiation-hardened gallium nitride devices for space-borne power converters and other rugged environments.

Electronics Weekly
August, 2023
Read article 阅读全文

GaN devices offer a plethora of benefits that align well with the demands of the space industry, addressing challenges related to reliability, radiation survivability, and space heritage.

Power Electronics News
August, 2023
Read article 阅读全文

Efficient Power Conversion (EPC) expands its family of radiation-hardened (rad-hard) gallium nitride (GaN) products for power conversion solutions with two new 40 V devices rated at 62 A and 250 A to address critical spaceborne and other high-reliability applications.

EL SEGUNDO, Calif.— July 2023 — EPC announces the introduction of two new 40 V rated radiation-hardened GaN FETs.EPC7001 is a 40 V, 4 mΩ, 250 A_Pulsed, rad-hard GaN FET in a small 7 mm² footprint. EPC7002 is a 40 V, 14.5 mΩ, 62 A_Pulsed, rad-hard GaN FET in a tiny 1.87 mm² footprint.  Both devices have a total dose radiation rating greater than 1,000K Rad(Si) and SEE immunity for LET of 83.7 MeV/mg/cm² with V_DS up to 100% of rated breakdown. These new devices, along with the rest of the Rad Hard family, are offered in a chip-scale package.  Packaged versions are available from EPC Space.

In this episode of Spirit: Behind the Screen, Spirit Electronics CEO Marti McCurdy chats with EPC’s CEO Alex Lidow and Marketing Director Renee Yawger about the progress of GaN. They discuss GaN’s performance under high radiation as well as the extensive testing, failure modes and device lifespan detailed in EPC’s Phase 15 reliability report. With the full potential of GaN still to be explored and new EPC products releasing frequently, including new half-bridge drivers, low-side drivers and full power stage, GaN is especially useful in New Space and commercial space applications.

Spirit: Behind the Screen
Listen to podcast

Efficient Power Conversion (EPC) expands its family of radiation-hardened (rad-hard) gallium nitride (GaN) products for power conversion solutions with two new devices rated at 100 V and 200 V to address a multitude of critical spaceborne and other high-reliability .

EL SEGUNDO, Calif.— April 2023 — EPC announces the introduction of two new radiation-hardened GaN FETs. The EPC7020 is a 200 V, 11 mΩ, 170 A_Pulsed, rad-hard GaN FET in a small 12 mm² footprint. The EPC7003 is a 100 V, 30 mΩ, 42 A_Pulsed, rad-hard GaN FET in a tiny 1.87 mm² footprint.  Both devices have a total dose radiation rating greater than 1,000K Rad(Si) and SEE immunity for LET of 83.7 MeV/mg/cm² with V_DS up to 100% of rated breakdown. These new devices, along with the rest of the Rad Hard family, EPC7019, EPC7014, EPC7004, EPC7018, EPC7007, are offered in a chip-scale package, the same as the commercial eGaN^® FET and IC family.  Packaged versions will be available from EPC Space.

GaN power devices should be the ideal choice for power conversion applications in space because they are more robust than rad hard MOSFETs when exposed to various forms of radiation. The electrical and thermal performance of GaN has also demonstrated superior operation in a space environment. In this podcast, Bel Lazar, Chief Executive Officer of EPC Space, will analyze the importance of GaN for the space industry. In addition to his role as CEO of EPC Space, Bel currently serves as COO of Efficient Power Conversion (EPC).

EETimes
Listen to podcast

宜普电源转换公司(EPC)扩展了其耐辐射氮化镓产品系列，新推的100 V产品用于要求严格的机载和其他高可靠性环境下的电源转换解决方案，进一步为这个产品系列添加第五个成员。

EPC公司宣布推出100 V、7 mΩ、160 A_Pulsed的耐辐射GaN FET EPC7004。尺寸小至6.56 mm²，其总剂量等级大于1 Mrad，线性能量转移（LET）的单一事件效应（SEE）抗扰度为85 MeV/(mg/cm²)。EPC7004与EPC7014、EPC7007、EPC7019和EPC7018器件都是采用芯片级封装，这与其他商用的氮化镓场效应晶体管（eGaN^® FET）和IC相同。封装器件将由EPC Space提供。

宜普电源转换公司(EPC)扩展了其耐辐射氮化镓产品系列，新推的100 V器件用于要求严格的机载和其他高可靠性环境的电源转换解决方案，与目前市场上的任何100 V耐辐射晶体管相比，它具有最低的导通电阻。

EPC公司宣布推出100 V、3.9 mΩ、345 A_Pulsed的耐辐射GaN FETEPC7018，尺寸为13.9 mm²，其总剂量等级大于1 Mrad，线性能量转移（LET）的单一事件效应（SEE）抗扰度为85 MeV/(mg/cm²)。与EPC7014、EPC7007和EPC7019耐辐射产品系列相同，都是采用芯片级封装。封装器件由EPC Space.提供。

Efficient Power Conversion (EPC) expands its family of radiation-hardened (rad-hard) gallium nitride (GaN) products for power conversion solutions in critical spaceborne and other high reliability environments with a device that has the lowest on-resistance of any rad hard transistor currently available on the market.

EL SEGUNDO, Calif.— March 2021 — EPC announces the introduction of the EPC7019 radiation-hardened eGaN FET. The EPC7019, a 40 V, 1.5 mΩ, 530 A_Pulsed, rad-hard eGaN FET in a small 13.9 mm² footprint. The EPC7019 has a total dose rating greater than 1 Mrad and SEE immunity for LET of 85 MeV/(mg/cm²). These devices are offered in a chip-scale package, the same as the commercial eGaN FET and IC family.  Packaged versions will be available from EPC Space.

As the outer reaches of the Earth’s atmosphere and space are opened to commercial development, motors will become increasingly important to systems places there for various functions. With the inevitability of manufacturing in space, motors – including their drivers – will take on even more functions. Of equal importance will be the motor drivers selected to drive those motors efficiently and reliably.

Components in Electronics
October, 2021
Read article

Gallium nitride (GaN) power semiconductors allow for innovation in the harsh radiation environments of space applications.

Electronics Weekly
September, 2021
Read article

Unlike silicon, whereby specific manufacturing processes and packaging are required to insulate semiconductors from the effects of radiation, GaN devices are largely resistant to the damage caused by space radiation due to their physical characteristics and structure. In an interview with Alex Lidow, CEO at EPC, Power Electronic News have discovered the features of GaN for space applications.

Power Electronics News
September, 2021
Read article

航空航天应用的技术发展是 2021 年的重要组成部分，因此更多的抗辐射元件即将问世。 最近新推两款新型场效应晶体管，它们给航太领域带来了什么？

All About Circuits
2021 年 6 月
阅读文章

Gallium nitride power device technology enables a new generation of power converters in space operating at higher frequencies, higher efficiencies, and greater power densities than everachievable before. GaN power devices can also exhibit superior radiation tolerance compared with Silicon MOSFETs depending upon their device design.

Power Electronics Europe
December, 2020
Read article

氮化镓功率晶体管是面向严苛航太任务的功率和射频应用的理想器件。 通过全新基于eGaN^®器件的解决方案，EPC Space公司提供专门为商业卫星关键应用而设计的氮化镓器件，可确保器件的耐辐射性能和对单粒子效应的免疫能力。 这些器件具有极高的电子迁移率、低温度系数和非常低的导通阻抗。

EETimes
2020年7月
阅读全文

面向关键宇航应用及其它高可靠性应用环境，合资公司EPC Space为客户提供先进、高可靠性的氮化镓功率转换解决方案，从而确保更可靠的操作和任务成功。

宜普电源转换公司（EPC）与VPT公司（海科航空公司旗下公司、NYSE交易代号为HEI.A及HEI）宣布成立合资公司EPC Space LLC，针对卫星及高可靠性应用，从事设计和制造耐辐射、采用封装、通过测试和经认证合格的硅基氮化镓晶体管和集成电路。

Two space travel related stories hit my desktop this week; one that rapidly generated major international headlines and one that slid very quietly onto my email screen.

The headline-hitter was the successful launch of Elon Musk’s SpaceX rocket with its payload of a Tesla sports car, complete with a dummy driver at the wheel. The second was about Gallium Nitride technology that would be suitable for space applications.

Electro Pages
Read article

SL70040SEH Low Side GaN FET Driver Powers ISL7002xSEH GaN FETs in Launch Vehicle and Satellite Power Supplies

TOKYO--(BUSINESS WIRE)--Renesas Electronics Corporation (TSE:6723), a premier supplier of advanced semiconductor solutions, today announced the space industry’s first radiation-hardened, low side Gallium Nitride (GaN) field effect transistor (FET) driver and GaN FETs that enable primary and secondary DC/DC converter power supplies in launch vehicles and satellites, as well as downhole drilling and high reliability industrial applications. These devices power ferrite switch drivers, motor control driver circuits, heater control modules, embedded command modules, 100V and 28V power conditioning, and redundancy switching systems.

Business Wire
Read article