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GaN-based Design of a 2 kW 48 V/12 V Bi-directional Power Module for 48 V Mild Hybrid Electric Vehicles

GaN-based Design of a 2 kW 48 V/12 V Bi-directional Power Module for 48 V Mild Hybrid Electric Vehicles

With the increase in government mandates to combat climate change, automakers are moving quickly to leverage new technology to respond by switching from the internal combustion engine to electric-drive vehicles. This article presents the design of a 2 kW, two-phase 48 V/12 V bi-directional converter using GaN FETs that achieves 96% efficiency and is targeted for the 48 V mild hybrid system.

PSD North America
March, 2023
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eGaN FET-Silicon Power Shoot-Out Part 3: Power over Ethernet

eGaN FET是以太网供电(PoE)应用中可行且高效方案,用以替代标准MOSFET解决方案。这些FET支持更高的工作频率,因而可以减小转换器体积和成本。我们搭建了13W和26W内含eGaN FET以太网供电转换器,并与标准MOSFET设计进行了逐项评估。不管在那种情况下,eGaN FET转换器都具有比MOSFET转换器更高的效率,因而具有降低系统成本的巨大潜力。

By Johan Strydom, Ph.D., Vice President of Applications, EPC
Michael de Rooij, Ph.D., Director of Applications, EPC
March 1, 2011

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