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Peregrine Semiconductor公司的全球最快速的GaN FET驱动器亮相

Peregrine Semiconductor公司的全球最快速的GaN FET驱动器亮相

基于氮化镓材料的场效应晶体管正在颠覆功率转换市场和替代硅基MOSFET。 与MOSFET相比,更快速的氮化镓场效应晶体管(GaN FET)可以在最细小的体积内实现更高的开关速度。 氮化镓器件的承诺是可以大大缩减电源供应器的体积及重量。为了实现最高的潜在性能, 这些具备高性能的氮化镓晶体管需要最优化的栅极驱动器。

Peregrine Semiconductor
2016年7月12日
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Driving eGaN™ FETs Both gate and Miller capacitances are significantly lower

As enhancement mode gallium-nitride-on-silicon transistors (eGaN™) gain wider acceptance as the successor to the venerable - but aged - power MOSFET, designers have been able to improve power conversion efficiency, size, and cost. eGaN FETs, however, are based on a relatively new and immature technology with limited design infrastructure to quickly design and implement products.

By Johan Strydom PhD, Director of Application Engineering EPC
Bodo’s Power Systems
November, 2010

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