//* (C) Copyright Efficient Power Conversion Corporation. All rights reserved. //***************************************************************************** //* Version History: //* 1.00: 05/24/2023 - Initial Model Creation simulator lang=spectre subckt EPC2306 (gatein drainin sourcein) .param si=1.312e+3 so=1.312e+3 sr=1.312e+3 .param aWg=1312 A1=(2.746e-02*aWg) k2=2.073e+00 k3=9.000e-02 rpara=2.059e-03 + rpara_s_factor=2.759e-01 aITc=3.982e-03 arTc=-7.828e-03 k2Tc=2.983e-04 + x0_0=3.232e+00 x0_0_TC=7.829e-04 x0_1=1.000e-06 x0_1_TC=-8.096e-12 + dgs1=4.3e-07 dgs2=2.6e-13 dgs3=0.8 dgs4=0.23 + ags1=(1.190e-12*si) ags2=(4.590e-13*si) ags3=1.801e+00 ags4=1.971e-01 + ags5=(0.000e+00*si) ags6=7.480e+01 ags7=1.055e+01 + agd1=(2.270e-15*sr) agd2=(5.040e-14*sr) agd3=-2.418e-01 agd4=8.724e+00 + agd5=(6.810e-14*sr) agd6=-6.205e+00 agd7=1.981e+00 agd8=(0.000e+00*sr) + agd9=-3.326e+01 agd10=8.900e-01 + asd1=(3.600e-13*so) asd2=(1.723e-13*so) asd3=-1.795e+01 asd4=8.190e+00 + asd5=(4.799e-13*so) asd6=-1.000e+01 asd7=1.488e+00 asd8=(1.217e-13*so) + asd9=-2.700e+01 asd10=1.701e+00 + rg_value=0.4 rd (drainin drain) resistor r=((1-rpara_s_factor)*rpara*(1-arTc*(temp-25))) rs (sourcein source) resistor r=(rpara_s_factor*rpara*(1-arTc*(temp-25))) rg (gatein gate) resistor r=(rg_value) rcsdconv (drain source) resistor r=(1E9/aWg) rcgsconv (gate source) resistor r=(1E9/aWg) rcgdconv (gate drain) resistor r=(1E9/aWg) gswitch drain source bsource i=( (v(drain,source)>0) ? + (A1*(1-aITc*(temp-25))*log(1.0+exp((v(gate,source)-(k2*(1-k2Tc*(temp-25))))/k3))* + v(drain,source)/(1 + (x0_0*(1-x0_0_TC*(temp-25))+x0_1*(1-x0_1_TC*(temp-25))*v(gate,source))*v(drain,source))) : + (-A1*(1-aITc*(temp-25))*log(1.0+exp((v(gate,drain)-(k2*(1-k2Tc*(temp-25))))/k3))* + v(source,drain)/(1 + (x0_0*(1-x0_0_TC*(temp-25))+x0_1*(1-x0_1_TC*(temp-25))*v(gate,drain))*v(source,drain))) ) ggsdiode gate source bsource i=( (v(gate,source)>10) ? + (0.125*aWg/1077*(dgs1*(exp((10.0)/dgs3)-1)+dgs2*(exp((10.0)/dgs4)-1))) : + (0.125*aWg/1077*(dgs1*(exp((v(gate,source))/dgs3)-1)+dgs2*(exp((v(gate,source))/dgs4)-1))) ) ggddiode gate drain bsource i=( (v(gate,drain)>10) ? + (0.125*aWg/1077*(dgs1*(exp((10.0)/dgs3)-1)+dgs2*(exp((10.0)/dgs4)-1))) : + (0.125*aWg/1077*(dgs1*(exp((v(gate,drain))/dgs3)-1)+dgs2*(exp((v(gate,drain))/dgs4)-1))) ) C_GS (gate source) bsource c=(ags1) G_CGS1 (gate source) bsource q=(0.5*ags2*ags4*log(1+exp((v(gate,source)-ags3)/ags4))+ + ags5*ags7*log(1+exp((v(source,drain)-ags6)/ags7)) ) C_GD (gate drain) bsource c=(agd1) G_CGD1 (gate drain) bsource q=(0.5*ags2*ags4*log(1+exp((v(gate,drain)-ags3)/ags4))+ + agd2*agd4*log(1+exp((v(gate,drain)-agd3)/agd4))+ + agd5*agd7*log(1+exp((v(gate,drain)-agd6)/agd7))+ + agd8*agd10*log(1+exp((v(gate,drain)-agd9)/agd10)) ) C_SD (source drain) bsource c=(asd1) G_CSD1 (source drain) bsource q=(asd2*asd4*log(1+exp((v(source,drain)-asd3)/asd4))+ + asd5*asd7*log(1+exp((v(source,drain)-asd6)/asd7))+ + asd8*asd10*log(1+exp((v(source,drain)-asd9)/asd10)) ) ends EPC2306