* (C) Copyright Efficient Power Conversion Corporation. All rights reserved. ***************************************************************************** * Version History: * 1.00: 09/29/2014 - Initial model creation * 1.01: 08/27/2015 - Updated the model from the preliminary version .subckt EPC2025 gatein drainin sourcein .param aWg=198 A1=9.2664 k2=2.7052 k3=0.15 rpara=0.08249 rpara_s_factor=0.1 + aITc=0.005472 arTc=-0.0076 k2Tc=0.0009 x0_0=2.3861 x0_1=7.8813e-07 x0_1_TC=0 + dgs1=4.3e-07 dgs2=2.6e-13 dgs3=0.8 dgs4=0.23 + ags1=1.9665e-10 ags2=1.3498e-10 ags3=1.9456 ags4=0.20157 + ags5=-1.0341e-13 ags6=-0.47874 ags7=3.1147 + agd1=6.3812e-14 agd2=2.0183e-11 agd3=-0.29442 agd4=7.3426 + agd5=1.842e-11 agd6=-1.4148 agd7=7.9242 + agd8=1.775e-12 agd9=-11.368 agd10=57.603 + asd1=3.2165e-11 asd2=1.9163e-10 asd3=-24.679 asd4=4.2072 + asd5=1.5505e-10 asd6=-0.14583 asd7=101.9 rg_value=0.3 rd drainin drain {((1-rpara_s_factor)*rpara*(1-arTc*(Temp-25)))} rs sourcein source {(rpara_s_factor*rpara*(1-arTc*(Temp-25)))} rg gatein gate {(rg_value)} *Large resistors to aid convergence Rcsdconv drain source {100000Meg/aWg} Rcgsconv gate source {100000Meg/aWg} Rcgdconv gate drain {100000Meg/aWg} gswitch drain source Value {if(v(drain,source)>0, + (A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,source)-(k2*(1-k2Tc*(Temp-25))))/k3))* + v(drain,source)/(1 + max(x0_0+x0_1*(1-x0_1_TC*(Temp-25))*v(gate,source),0.2)*v(drain,source)) ), + (-A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,drain)-(k2*(1-k2Tc*(Temp-25))))/k3))* + v(source,drain)/(1 + max(x0_0+x0_1*(1-x0_1_TC*(Temp-25))*v(gate,drain),0.2)*v(source,drain)) ) ) } ggsdiode gate source VALUE {if( v(gate,source) < 10, + 0.5*aWg/1077*(dgs1*(exp((v(gate,source))/dgs3)-1)+dgs2*(exp((v(gate,source))/dgs4)-1)), + 0.5*aWg/1077*(dgs1*(exp((10)/dgs3)-1)+dgs2*(exp((10)/dgs4)-1)) ) } ggddiode gate drain Value {if( v(gate,drain) < 10, + 0.5*aWg/1077*(dgs1*(exp((v(gate,drain))/dgs3)-1)+dgs2*(exp((v(gate,drain))/dgs4)-1)), + 0.5*aWg/1077*(dgs1*(exp((10)/dgs3)-1)+dgs2*(exp((10)/dgs4)-1)) ) } *Model for voltage dependent gate-source capacitance E_IGS tl_gs bl_gs value = {0.5*ags2*ags4*log(1+exp((v(gate,source)-ags3)/ags4))+ + ags5*ags7*log(1+exp((v(source,drain)-ags6)/ags7))+ + ags1*v(gate,source) } V_INGS br_gs bl_gs 0.0 C_IGS br_gs tr_gs {1.0e-6} R_IGS tr_gs tl_gs {1.0e-4} F_IGS gate source V_INGS 1e6 R_IGS2 bl_gs source 100Meg *Model for voltage dependent gate-drain capacitance E_IGD tl_gd bl_gd value = {0.5*ags2*ags4*log(1+exp((v(gate,drain)-ags3)/ags4))+ + agd2*agd4*log(1+exp((v(gate,drain)-agd3)/agd4))+ + agd5*agd7*log(1+exp((v(gate,drain)-agd6)/agd7))+ + agd8*agd10*log(1+exp((v(gate,drain)-agd9)/agd10))+ + agd1*v(gate,drain) } V_INGD br_gd bl_gd 0.0 C_IGD br_gd tr_gd {1.0e-6} R_IGD tr_gd tl_gd {1.0e-4} F_IGD gate drain V_INGD 1e6 R_IGD2 bl_gd drain 100Meg *Model for voltage dependent source-drain capacitance E_ISD tl_sd bl_sd value = {asd2*asd4*log(1+exp((v(source,drain)-asd3)/asd4))+ + asd5*asd7*log(1+exp((v(source,drain)-asd6)/asd7))+ + asd1*v(source,drain) } V_INSD br_sd bl_sd 0.0 C_ISD br_sd tr_sd {1.0E-6} R_ISD tr_sd tl_sd {1.0e-4} F_ISD source drain V_INSD 1e6 R_ISD2 bl_sd drain 100Meg .ends