* (C) Copyright Efficient Power Conversion Corporation. All rights reserved. ***************************************************************************** * Version History: * 1.00: 04/13/2022 - Initial Model Creation * 1.01: 04/28/2022 - Updated Rg .subckt EPC2071 gatein drainin sourcein .param si={aWg} so={aWg} sr={aWg} .param aWg={Wg*1E-3} Wg=2335000 A1={1.914e-02*aWg} k2=1.984e+00 k3=9.000e-02 rpara=9.385e-04 + rpara_s_factor=2.753e-01 aITc=3.863e-03 arTc=-8.906e-03 k2Tc=1.402e-03 + x0_0=2.937e+00 x0_0_TC=-2.273e-03 x0_1=-1.000e-02 x0_1_TC=2.850e-17 + dgs1=4.3e-07 dgs2=2.6e-13 dgs3=0.8 dgs4=0.23 + ags1={1.098e-12*si} ags2={3.734e-13*si} ags3=2.226e+00 ags4=2.157e-01 + ags5={0.000e+00*si} ags6=7.480e+01 ags7=1.055e+01 + agd1={1.711e-15*sr} agd2={7.850e-14*sr} agd3=-5.833e+00 agd4=1.912e+00 + agd5={5.902e-15*sr} agd6=-2.413e+01 agd7=9.676e+00 agd8={0.000e+00*sr} + agd9=-3.326e+01 agd10=8.900e-01 + asd1={3.410e-13*so} asd2={4.750e-13*so} asd3=-9.350e+00 asd4=6.780e-01 + asd5={8.090e-14*so} asd6=-1.810e+00 asd7=1.910e+00 asd8={3.760e-13*so} + asd9=-2.210e+01 asd10=1.200e+01 + rg_value=0.3 .model rpar res(TC1={-1.0*arTc} T_measured=25) rd drainin drain rpar {(1-rpara_s_factor)*rpara} rs sourcein source rpar {rpara_s_factor*rpara} rg gatein gate {(rg_value)} *Large resistors to aid convergence Rcsdconv drain source {100000Meg/aWg} Rcgsconv gate source {100000Meg/aWg} Rcgdconv gate drain {100000Meg/aWg} gswitch drain source Value {if(v(drain,source)>0, + (A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,source)-(k2*(1-k2Tc*(Temp-25))))/k3))* + v(drain,source)/(1 + (x0_0*(1-x0_0_TC*(Temp-25))+x0_1*(1-x0_1_TC*(Temp-25))*v(gate,source))*v(drain,source)) ), + (-A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,drain)-(k2*(1-k2Tc*(Temp-25))))/k3))* + v(source,drain)/(1 + (x0_0*(1-x0_0_TC*(Temp-25))+x0_1*(1-x0_1_TC*(Temp-25))*v(gate,drain))*v(source,drain)) ) )} ggsdiode gate source VALUE {if( v(gate,source) < 10, + 0.125*aWg/1077*(dgs1*(exp((v(gate,source))/dgs3)-1)+dgs2*(exp((v(gate,source))/dgs4)-1)), + 0.125*aWg/1077*(dgs1*(exp((10)/dgs3)-1)+dgs2*(exp((10)/dgs4)-1)) ) } ggddiode gate drain Value {if( v(gate,drain) < 10, + 0.125*aWg/1077*(dgs1*(exp((v(gate,drain))/dgs3)-1)+dgs2*(exp((v(gate,drain))/dgs4)-1)), + 0.125*aWg/1077*(dgs1*(exp((10)/dgs3)-1)+dgs2*(exp((10)/dgs4)-1)) ) } *Gate-source capacitance C_GS gate source {ags1} TC=0,0 gC_CGS1 gate source Q={(0.5*ags2*ags4*log(1+exp((v(gate,source)-ags3)/ags4))+ + ags5*ags7*log(1+exp((v(source,drain)-ags6)/ags7)) )} *Gate-drain capacitance C_GD gate drain {agd1} TC=0,0 gC_CGD1 gate drain Q={(0.5*ags2*ags4*log(1+exp((v(gate,drain)-ags3)/ags4))+ + agd2*agd4*log(1+exp((v(gate,drain)-agd3)/agd4))+ + agd5*agd7*log(1+exp((v(gate,drain)-agd6)/agd7))+ + agd8*agd10*log(1+exp((v(gate,drain)-agd9)/agd10)))} *Source-drain capacitance C_SD source drain {asd1} TC=0,0 gC_CSD1 source drain Q={(asd2*asd4*log(1+exp((v(source,drain)-asd3)/asd4))+ + asd5*asd7*log(1+exp((v(source,drain)-asd6)/asd7))+ + asd8*asd10*log(1+exp((v(source,drain)-asd9)/asd10)) )} .ends