* (C) Copyright Efficient Power Conversion Corporation. All rights reserved. ***************************************************************************** * Version History: * 1.00: 08/13/2020 - Initial Model Creation .subckt EPC2207 gatein drainin sourcein .param si={aWg*1.200e-03} so={aWg*6.150e-03} sr={aWg} .param aWg={Wg*1E-3} Wg=362000 A1={3.625e-02*aWg} k2=1.874e+00 k3=9.000e-02 rpara=1.243e-02 + rpara_s_factor=2.406e-01 aITc=3.000e-03 arTc=-6.700e-03 k2Tc=6.000e-04 + x0_0=4.938e+00 x0_0_TC=-2.000e-03 x0_1=-1.285e-01 x0_1_TC=0.000e+00 + dgs1=4.3e-07 dgs2=2.6e-13 dgs3=0.8 dgs4=0.23 + ags1={1.045e-09*si} ags2={8.283e-10*si} ags3=1.376e+00 ags4=1.808e-01 + ags5={0.000e+00*si} ags6=7.480e+01 ags7=1.055e+01 + agd1={1.124e-15*sr} agd2={1.409e-13*sr} agd3=-6.900e+00 agd4=5.314e+00 + agd5={2.769e-14*sr} agd6=-2.326e+01 agd7=2.129e+01 agd8={1.081e-15*sr} + agd9=-4.326e+01 agd10=1.029e+01 + asd1={5.053e-11*so} asd2={3.977e-11*so} asd3=-1.941e+01 asd4=2.356e+00 + asd5={1.449e-11*so} asd6=-8.476e+01 asd7=1.007e+01 asd8={8.934e-11*so} + asd9=-3.023e+01 asd10=2.523e+01 + rg_value=0.3 rd drainin drain {((1-rpara_s_factor)*rpara*(1-arTc*(Temp-25)))} rs sourcein source {(rpara_s_factor*rpara*(1-arTc*(Temp-25)))} rg gatein gate {(rg_value)} *Large resistors to aid convergence Rcsdconv drain source {100000Meg/aWg} Rcgsconv gate source {100000Meg/aWg} Rcgdconv gate drain {100000Meg/aWg} gswitch drain source Value {if(v(drain,source)>0, + (A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,source)-(k2*(1-k2Tc*(Temp-25))))/k3))* + v(drain,source)/(1 + (x0_0*(1-x0_0_TC*(Temp-25))+x0_1*(1-x0_1_TC*(Temp-25))*v(gate,source))*v(drain,source)) ), + (-A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,drain)-(k2*(1-k2Tc*(Temp-25))))/k3))* + v(source,drain)/(1 + (x0_0*(1-x0_0_TC*(Temp-25))+x0_1*(1-x0_1_TC*(Temp-25))*v(gate,drain))*v(source,drain)) ) )} ggsdiode gate source VALUE {if( v(gate,source) < 10, + 0.125*aWg/1077*(dgs1*(exp((v(gate,source))/dgs3)-1)+dgs2*(exp((v(gate,source))/dgs4)-1)), + 0.125*aWg/1077*(dgs1*(exp((10)/dgs3)-1)+dgs2*(exp((10)/dgs4)-1)) ) } ggddiode gate drain Value {if( v(gate,drain) < 10, + 0.125*aWg/1077*(dgs1*(exp((v(gate,drain))/dgs3)-1)+dgs2*(exp((v(gate,drain))/dgs4)-1)), + 0.125*aWg/1077*(dgs1*(exp((10)/dgs3)-1)+dgs2*(exp((10)/dgs4)-1)) ) } *Model for voltage dependent gate-source capacitance E_GS tl_gs bl_gs gate source 1.0 V_INGS 0 bl_gs 0V C_IGS tl_gs 0 1.0E-6 G_GS gate source VALUE = {1E6*I(V_INGS)* + (ags1 + 0.5*ags2/(1.0 + exp( (v(gate,source)-ags3)/ags4 ))*exp( (v(gate,source)-ags3)/ags4 ) + + ags5/(1.0 + exp((v(source,drain)-ags6)/ags7))*exp((v(source,drain)-ags6)/ags7))} *Model for voltage dependent gate-drain capacitance E_GD tl_gd bl_gd gate drain 1.0 V_INGD 0 bl_gd 0V C_IGD tl_gd 0 1.0E-6 G_GD gate drain VALUE = {1E6*I(V_INGD)*(agd1 + 0.5*ags2/(1.0 + exp((v(gate,drain)-ags3)/ags4))*exp((v(gate,drain)-ags3)/ags4) + + agd2/(1.0 + exp((v(gate,drain)-agd3)/agd4))*exp((v(gate,drain)-agd3)/agd4) + + agd5/(1.0 + exp((v(gate,drain)-agd6)/agd7))*exp((v(gate,drain)-agd6)/agd7) + + agd8/(1.0 + exp((v(gate,drain)-agd9)/agd10))*exp((v(gate,drain)-agd9)/agd10))} *Model for voltage dependent source-drain capacitance E_SD tl_ds bl_ds source drain 1.0 V_INSD 0 bl_ds 0V C_ISD tl_ds 0 1.0E-6 G_SD source drain VALUE = {1E6*I(V_INSD)*(asd1 + asd2/(1 + exp((v(source,drain)-asd3)/asd4))*exp((v(source,drain)-asd3)/asd4) + + asd5/(1 + exp((v(source,drain)-asd6)/asd7))*exp((v(source,drain)-asd6)/asd7) + + asd8/(1 + exp((v(source,drain)-asd9)/asd10))*exp((v(source,drain)-asd9)/asd10))} .ends