* (C) Copyright Efficient Power Conversion Corporation. All rights reserved. ***************************************************************************** * Version History: * 1.00: 01/15/2021 - Initial Model Creation .subckt EPC2219 gatein drainin sourcein .param si={aWg*6.500e-04} so={aWg*5.600e-03} sr={aWg} .param aWg={Wg*1E-3} Wg=3200 A1={4.556e-02*aWg} k2=2.708e+00 k3=9.000e-02 rpara=1.410e+00 + rpara_s_factor=1.599e-01 aITc=3.000e-03 arTc=-7.000e-03 k2Tc=6.000e-04 + x0_0=4.747e+00 x0_0_TC=-4.000e-03 x0_1=3.036e-02 x0_1_TC=0.000e+00 + dgs1=4.3e-07 dgs2=2.6e-13 dgs3=0.8 dgs4=0.23 + dgs5=2.5e-3 dgs6=-1.985 dgs7=8e-2 + ags1={3.766e-09*si} ags2={6.591e-10*si} ags3=2.249e+00 ags4=1.492e-01 + ags5={9.979e-12*si} ags6=-2.178e+00 ags7=2.626e-02 + agd1={1.698e-15*sr} agd2={2.067e-14*sr} agd3=-4.730e-01 agd4=1.173e+00 + agd5={1.768e-13*sr} agd6=-3.962e+00 agd7=5.392e+00 agd8={3.644e-15*sr} + agd9=-2.526e+01 agd10=2.932e+01 + asd1={1.118e-10*so} asd2={1.190e-10*so} asd3=2.000e-01 asd4=1.839e+01 + asd5={8.143e-11*so} asd6=-1.722e+01 asd7=1.362e+00 asd8={0.000e+00*so} + asd9=1.000e+00 asd10=1.000e+00 + rg_value=4.8 rd drainin drain {((1-rpara_s_factor)*rpara*(1-arTc*(Temp-25)))} rs sourcein source {(rpara_s_factor*rpara*(1-arTc*(Temp-25)))} rg gatein gate {(rg_value)} *Large resistors to aid convergence Rcsdconv drain source {100000Meg/aWg} Rcgsconv gate source {100000Meg/aWg} Rcgdconv gate drain {100000Meg/aWg} gswitch drain source Value {if(v(drain,source)>0, + (A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,source)-(k2*(1-k2Tc*(Temp-25))))/k3))* + v(drain,source)/(1 + (x0_0*(1-x0_0_TC*(Temp-25))+x0_1*(1-x0_1_TC*(Temp-25))*v(gate,source))*v(drain,source)) ), + (-A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,drain)-(k2*(1-k2Tc*(Temp-25))))/k3))* + v(source,drain)/(1 + (x0_0*(1-x0_0_TC*(Temp-25))+x0_1*(1-x0_1_TC*(Temp-25))*v(gate,drain))*v(source,drain)) ) )} ggsdiode gate source VALUE {if( v(gate,source) > 0, + 0.125*aWg/1077*(dgs1*(exp((v(gate,source))/dgs3)-1)+dgs2*(exp((v(gate,source))/dgs4)-1)), + (-dgs5*log(1+exp((-v(gate,source)+dgs6)/dgs7))) ) } ggddiode gate drain Value {if( v(gate,drain) < 10, + 0.125*aWg/1077*(dgs1*(exp((v(gate,drain))/dgs3)-1)+dgs2*(exp((v(gate,drain))/dgs4)-1)), + 0.125*aWg/1077*(dgs1*(exp((10)/dgs3)-1)+dgs2*(exp((10)/dgs4)-1)) ) } *Model for voltage dependent gate-source capacitance E_GS tl_gs bl_gs gate source 1.0 V_INGS 0 bl_gs 0V C_IGS tl_gs 0 1.0E-6 G_GS gate source VALUE = {1E6*I(V_INGS)* + (ags1 + 0.5*ags2/(1.0 + exp( (v(gate,source)-ags3)/ags4 ))*exp( (v(gate,source)-ags3)/ags4 ) + + ags5/(1.0 + exp((v(source,drain)-ags6)/ags7))*exp((v(source,drain)-ags6)/ags7))} *Model for voltage dependent gate-drain capacitance E_GD tl_gd bl_gd gate drain 1.0 V_INGD 0 bl_gd 0V C_IGD tl_gd 0 1.0E-6 G_GD gate drain VALUE = {1E6*I(V_INGD)*(agd1 + 0.5*ags2/(1.0 + exp((v(gate,drain)-ags3)/ags4))*exp((v(gate,drain)-ags3)/ags4) + + agd2/(1.0 + exp((v(gate,drain)-agd3)/agd4))*exp((v(gate,drain)-agd3)/agd4) + + agd5/(1.0 + exp((v(gate,drain)-agd6)/agd7))*exp((v(gate,drain)-agd6)/agd7) + + agd8/(1.0 + exp((v(gate,drain)-agd9)/agd10))*exp((v(gate,drain)-agd9)/agd10))} *Model for voltage dependent source-drain capacitance E_SD tl_ds bl_ds source drain 1.0 V_INSD 0 bl_ds 0V C_ISD tl_ds 0 1.0E-6 G_SD source drain VALUE = {1E6*I(V_INSD)*(asd1 + asd2/(1 + exp((v(source,drain)-asd3)/asd4))*exp((v(source,drain)-asd3)/asd4) + + asd5/(1 + exp((v(source,drain)-asd6)/asd7))*exp((v(source,drain)-asd6)/asd7) + + asd8/(1 + exp((v(source,drain)-asd9)/asd10))*exp((v(source,drain)-asd9)/asd10))} .ends