* (C) Copyright Efficient Power Conversion Corporation. All rights reserved. ***************************************************************************** * Version History: * 1.00: 01/18/2023 - Initial Model Creation .subckt EPC2252 gatein drainin sourcein *#ASSOC Category=NMOS Symbol=nmos_sub mapping=2,1,3 .param aWg={Wg*1E-3} Wg=498000 A1={3.552e-02*aWg} k2=1.889e+00 k3=9.000e-02 rpara=7.037e-03 .param si={aWg} so={aWg} sr={aWg} + rpara_s_factor=2.873e-01 aITc=5.337e-03 arTc=-5.033e-03 k2Tc=8.229e-04 + x0_0=3.585e+00 x0_0_TC=2.398e-03 x0_1=8.937e-02 x0_1_TC=-1.253e-12 + dgs1=4.3e-07 dgs2=2.6e-13 dgs3=0.8 dgs4=0.23 + ags1={7.580e-13*si} ags2={4.460e-13*si} ags3=1.604e+00 ags4=1.809e-01 + ags5={0.000e+00*si} ags6=7.480e+01 ags7=1.055e+01 + agd1={1.940e-15*sr} agd2={1.180e-13*sr} agd3=-5.000e+00 agd4=4.314e+00 + agd5={7.790e-15*sr} agd6=-1.726e+01 agd7=1.529e+01 agd8={0.000e+00*sr} + agd9=-3.326e+01 agd10=8.900e-01 + asd1={3.250e-13*so} asd2={3.400e-13*so} asd3=-1.285e+01 asd4=2.011e+00 + asd5={1.987e-13*so} asd6=-2.847e+01 asd7=3.500e+00 asd8={6.330e-14*so} + asd9=-6.875e+01 asd10=1.758e+01 + rg_value=0.7 .model rpar res(TC1={-1.0*arTc} T_measured=25) rd drainin drain rpar {(1-rpara_s_factor)*rpara} rs sourcein source rpar {rpara_s_factor*rpara} rg gatein gate {(rg_value)} *Large resistors to aid convergence Rcsdconv drain source {100000Meg/aWg} Rcgsconv gate source {100000Meg/aWg} Rcgdconv gate drain {100000Meg/aWg} gswitch drain source Value {if(v(drain,source)>0, + (A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,source)-(k2*(1-k2Tc*(Temp-25))))/k3))* + v(drain,source)/(1 + (x0_0*(1-x0_0_TC*(Temp-25))+x0_1*(1-x0_1_TC*(Temp-25))*v(gate,source))*v(drain,source)) ), + (-A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,drain)-(k2*(1-k2Tc*(Temp-25))))/k3))* + v(source,drain)/(1 + (x0_0*(1-x0_0_TC*(Temp-25))+x0_1*(1-x0_1_TC*(Temp-25))*v(gate,drain))*v(source,drain)) ) )} ggsdiode gate source VALUE {if( v(gate,source) < 10, + 0.125*aWg/1077*(dgs1*(exp((v(gate,source))/dgs3)-1)+dgs2*(exp((v(gate,source))/dgs4)-1)), + 0.125*aWg/1077*(dgs1*(exp((10)/dgs3)-1)+dgs2*(exp((10)/dgs4)-1)) ) } ggddiode gate drain Value {if( v(gate,drain) < 10, + 0.125*aWg/1077*(dgs1*(exp((v(gate,drain))/dgs3)-1)+dgs2*(exp((v(gate,drain))/dgs4)-1)), + 0.125*aWg/1077*(dgs1*(exp((10)/dgs3)-1)+dgs2*(exp((10)/dgs4)-1)) ) } *Gate-source capacitance C_GS gate source {ags1} TC=0,0 gC_CGS1 gate source Q={(0.5*ags2*ags4*log(1+exp((v(gate,source)-ags3)/ags4))+ + ags5*ags7*log(1+exp((v(source,drain)-ags6)/ags7)) )} *Gate-drain capacitance C_GD gate drain {agd1} TC=0,0 gC_CGD1 gate drain Q={(0.5*ags2*ags4*log(1+exp((v(gate,drain)-ags3)/ags4))+ + agd2*agd4*log(1+exp((v(gate,drain)-agd3)/agd4))+ + agd5*agd7*log(1+exp((v(gate,drain)-agd6)/agd7))+ + agd8*agd10*log(1+exp((v(gate,drain)-agd9)/agd10)))} *Source-drain capacitance C_SD source drain {asd1} TC=0,0 gC_CSD1 source drain Q={(asd2*asd4*log(1+exp((v(source,drain)-asd3)/asd4))+ + asd5*asd7*log(1+exp((v(source,drain)-asd6)/asd7))+ + asd8*asd10*log(1+exp((v(source,drain)-asd9)/asd10)) )} .ends