* (C) Copyright Efficient Power Conversion Corporation. All rights reserved. * ************************************************************************** * Version History: * 1.00: 09/23/2013 - Initial model creation * 1.01: 03/17/2014 - Adjusted braces to correct syntax errors * 1.02: 02/19/2019 - Updated the Capacitance Model * 1.03: 02/26/2019 - Added a missing parameter * 1.04: 02/04/2020 - Remove some parameters in the Cgd model and add missing parameters .subckt EPC8004 gatein drainin sourcein .param scale={50.4/25} .param aWg={scale*25} A1={scale*1.593} k2={2.03} k3={0.177} rpara={0.1412/scale} rpara_s_factor={0.25} + aITc={0.0036} arTc={-0.0036} x0_0={1.02} x0_0_TC={0} x0_1={0.1789} x0_1_TC={0.004} k2Tc={0} + dgs1={scale*4.3e-7} dgs2={scale*2.6e-13} dgs3={.8} dgs4={.23} + ags1={(scale*15.6E-12 + 13.1E-12)} ags2={scale*8.875E-12} ags3={1.56} ags4={0.26} + ags5={scale*-2.01E-13} ags6={-7.99} ags7={2.46} + agd1={scale*0.167E-12} agd2={scale*3.523E-12} agd3={-0.889} agd4={1.044} + agd5={scale*1.14E-12} agd6={-5.658} agd7={4.445} + asd1={(scale*2.72E-12 + 1.9E-12)} asd2={scale*9.00E-12} asd3={-6.1585} asd4={3.1215} + asd5={scale*6.37E-12} asd6={-42.978} asd7={28.23} + rg_value={0.4} rd drainin drain {((1-rpara_s_factor)*rpara*(1-arTc*(Temp-25)))} rs sourcein source {(rpara_s_factor*rpara*(1-arTc*(Temp-25)))} rg gatein gate {(rg_value)} *Large resistors to aid convergence Rcsdconv drain source {100000Meg/aWg} Rcgsconv gate source {100000Meg/aWg} Rcgdconv gate drain {100000Meg/aWg} gswitch drain source Value {if(v(drain,source)>0, + (A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,source)-(k2*(1-k2Tc*(Temp-25))))/k3))* + v(drain,source)/(1 + (x0_0*(1-x0_0_TC*(Temp-25))+x0_1*(1-x0_1_TC*(Temp-25))*v(gate,source))*v(drain,source)) ), + (-A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,drain)-(k2*(1-k2Tc*(Temp-25))))/k3))* + v(source,drain)/(1 + (x0_0*(1-x0_0_TC*(Temp-25))+x0_1*(1-x0_1_TC*(Temp-25))*v(gate,drain))*v(source,drain)) ) )} ggsdiode gate source VALUE {if( v(gate,source) < 10, + 0.125*aWg/1077*(dgs1*(exp((v(gate,source))/dgs3)-1)+dgs2*(exp((v(gate,source))/dgs4)-1)), + 0.125*aWg/1077*(dgs1*(exp((10)/dgs3)-1)+dgs2*(exp((10)/dgs4)-1)) ) } ggddiode gate drain Value {if( v(gate,drain) < 10, + 0.125*aWg/1077*(dgs1*(exp((v(gate,drain))/dgs3)-1)+dgs2*(exp((v(gate,drain))/dgs4)-1)), + 0.125*aWg/1077*(dgs1*(exp((10)/dgs3)-1)+dgs2*(exp((10)/dgs4)-1)) ) } *Model for voltage dependent gate-source capacitance E_GS tl_gs bl_gs gate source 1.0 V_INGS 0 bl_gs 0V C_IGS tl_gs 0 1.0E-6 G_GS gate source VALUE = {1E6*I(V_INGS)* + (ags1 + 0.5*ags2/(1.0 + exp( (v(gate,source)-ags3)/ags4 ))*exp( (v(gate,source)-ags3)/ags4 ) + + ags5/(1.0 + exp((v(source,drain)-ags6)/ags7))*exp((v(source,drain)-ags6)/ags7))} *Model for voltage dependent gate-drain capacitance E_GD tl_gd bl_gd gate drain 1.0 V_INGD 0 bl_gd 0V C_IGD tl_gd 0 1.0E-6 G_GD gate drain VALUE = {1E6*I(V_INGD)*(agd1 + 0.5*ags2/(1.0 + exp((v(gate,drain)-ags3)/ags4))*exp((v(gate,drain)-ags3)/ags4) + + agd2/(1.0 + exp((v(gate,drain)-agd3)/agd4))*exp((v(gate,drain)-agd3)/agd4) + + agd5/(1.0 + exp((v(gate,drain)-agd6)/agd7))*exp((v(gate,drain)-agd6)/agd7))} *Model for voltage dependent source-drain capacitance E_SD tl_ds bl_ds source drain 1.0 V_INSD 0 bl_ds 0V C_ISD tl_ds 0 1.0E-6 G_SD source drain VALUE = {1E6*I(V_INSD)*(asd1 + asd2/(1 + exp((v(source,drain)-asd3)/asd4))*exp((v(source,drain)-asd3)/asd4) + + asd5/(1 + exp((v(source,drain)-asd6)/asd7))*exp((v(source,drain)-asd6)/asd7))} .ends