Events

APEC 2023

Sunday, March 19, 2023 - Thursday, March 23, 2023
APEC 2023
Location: Orlando, FL

Applied Power Electronics Conference (APEC) 2023

The EPC Team will be featuring the industry’s broadest portfolio of GaN power conversion solutions that are changing the way we live. GaN FETs and ICs enable higher efficiency, smaller size and weight, and lower cost in applications such as DC-DC converters, lidar, motor drives for eMobility, robotics, and drones, solar power, and low-cost satellites.

Click for more details on our presentations and how to meet with EPC during APEC 2023

8th CIES Technology Forum

Monday, March 27, 2023 - Tuesday, March 28, 2023
8th CIES Technology Forum
Location: Virtual Event

Extending GaN integration to higher power and faster speeds – an examination of the progress and roadmaps for GaN integrationSpeaker: Alex Lidow, CEO and Co-founder, Efficient Power Conversion Corp.

GaN-based integrated circuits are in high-volume applications such as motor drives, DC-DC converters, and lidar systems. In motor drives and DC-DC converters the roadmaps need to point to higher power density. In lidar it is greater speed. In all of the above there needs to be strategic integration of functions and features. This talk will discuss the current state-of-the-art as well as the next few years’ innovations in GaN integrated circuits.

More Information

Power Electronics International Conference

Tuesday, April 18, 2023 - Wednesday, April 19, 2023
Power Electronics International Conference
Location: Brussels, Belgium

GaN Integrated Circuits are Revolutionizing Power Electronics Speaker: Marco Palma, Director of Motor Drive Systems and Applications

The latest ePower™ integrated circuits based on gallium nitride technology are revolutionizing Power Electronics applications such as dc-dc converters and motor drives as industrial drones, e-bikes, scooters, power tools. Gallium nitride technology has opened a new era in the world of power electronics because of a clear differentiation factor between GaN and silicon: medium voltage gallium nitride devices can be built on a planar technology while this is cost-prohibitive for silicon devices. Silicon devices are made on a vertical technology, making it physically impossible to have two power devices in the same chip. EPC’s GaN-on-Si planar technology allows the integration of the power section with the control in the same die. In 2014, EPC started the journey toward a power system-on-a-chip introducing a family of integrated devices comprised of multiple FETs on one chip. Practical examples of real applications with these integrated circuits will be shown at the PE International Conference.

More Information

EEHE 2023

Tuesday, June 13, 2023 - Thursday, June 15, 2023
EEHE 2023
Location: Essen, Germany

High Power-Density, Bi-Directional, 48 V to 12 V Converter using eGaN® FETs for next generation BEV’s Speaker: : Michael de Rooij, Ph.D., Vice President of Applications Engineering

This work presents a high power-density LLC based system that addresses size, with a 23 mm x 18 mm x 10 mm volume, weighs just 15 grams and can deliver up to 750 W power for 12 V systems, with unrestricted voltage range from 11.0 V through 14.3 V, operating from a 48 V bus, with range of 36 V through 52 V.

Power Steering Application using eGaN Integrated Circuit Speaker: Marco Palma, Director of Motor Drive Systems and Applications

In motor drive applications, GaN inverters allow the increase of the PWM frequency and the drastic reduction of dead times, allowing the removal of bulky electrolytic capacitors and the reduction of overall solution dimensions. These benefits result in a reduction in size, weight, and material cost, over equivalent MOSFET-based designs. This work presents recent developments in employing GaN integrated circuit devices in a multiple-three-phase motor power steering application that requires 48V or 24V nominal voltage and up to 10 ARMS in each stator phase winding.

More Information

Download iCal calendar file Show RSS feed