GaN Transistors for Efficient Power Conversion


March 17 – 21, 2013

"GaN Transistors for Efficient Power Conversion"
Location: Long Beach, CA
Speakers: Alex Lidow, PhD; CEO, Efficient Power Conversion Corporation, Michael de Rooij, PhD; Senior Director of Applications, Efficient Power Conversion Corporation, Johan Strydom, PhD; Vice President of Applications, Efficient Power Conversion Corporation, David Reusch, PhD; Director of Applications Engineering, Efficient Power Conversion Corporation

Gallium Nitride is beginning to be broadly accepted in many power conversion and RF applications. The technology is rapidly developing and product experience in the field is expanding. This seminar will begin with Alex Lidow explaining how GaN High Electron Mobility Transistors (HEMT) work followed by an update on the state-of-the art in the technology from the many new entrants into this field. Included in this update will be the latest manufacturing technologies, cost requirements and comparisons, reliability data and acceleration factors.

Johan Strydom and Michael de Rooij will follow with a tutorial on how to use these high performance devices. They will start with drivers, layout, and thermal considerations for high performance and high frequency power conversion, and then move to several applications examples including high frequency Envelope Tracking (ET), Power Factor Correction (PFC), and Wireless Power Transmission.