IIC China Conference


IIC China Conference
February 23, 2012

"eGaN FETs for Efficient Power Conversion"
Speakers: Alex Lidow PhD; CEO, Efficient Power Conversion Corporation
Location: Shenzhen, China

Enhancement mode gallium-nitride-on-silicon (eGaN®) FETs are gaining wider acceptance as the successor to the aging power MOSFET as designers have been able to significantly improve power conversion system efficiency, size, and cost. eGaN FET-based products have begun to hit the market in applications such as wireless power transmission, RF envelope tracking, power over Ethernet (PoE), isolated and non-isolated DC-DC converters, and solar microinveters. 600 V products are just emerging as IGBT replacements and promise to make a major impact on power factor correction, AC-DC conversion, and motion control.

We address the new products available today and planned for the near future, built on Gallium Nitride grown on top of a silicon substrate, and show how their performance compares against silicon-based solutions is several key power conversion applications.

Performance is only one dimension of the equation leading to the conclusion that eGaN technology is a game-changer. The other dimensions are product reliability, ease of use, and cost. These topics will also be discussed, showing that the capability to displace silicon across a significant portion of the power management market is now in hand.