48V Automotive Demos

48 V Automotive Power Seminar

48V Automotive

AEC GaN Devices

Part
Number
Configuration VDS Max
RDS(ON)
(mΩ)
(VGS = 5 V)
QG
typ
(nC)
QGS
typ
(nC)
QGD
typ
(nC)
QOSS
typ
(nC)
Max. Peak Pulsed ID(A)
(25°C, Tpulse = 300µs)
Package
(mm)
Half-Bridge
Development
Boards
EPC2216 GaN FET
EPC2216 Single 15 26 0.87 0.21 0.13 0.53 28 BGA 0.85 x 1.2 Buy Now
EPC2206 GaN FET
EPC2206 Single 80 2.2 15 4.1 3 72 390 LGA 6.05 x 2.3 Buy Now
EPC2202 GaN FET
EPC2202 Single 80 17 3.2 1 0.55 18 75 LGA 2.1 x 1.6 Buy Now
EPC2214 GaN FET
EPC2214 Single 80 20 1.8 0.5 0.3 8 47 BGA 1.35 x 1.35 Buy Now
EPC2203 GaN FET
EPC2203 Single 80 80 0.67 0.22 0.12 3.6 17 BGA 0.9 x 0.9 Buy Now
EPC2212 GaN FET
EPC2212 Single 100 13.5 3.2 0.9 0.6 18 75 LGA 2.1 x 1.6 Buy Now

GaN Reliability

This Phase 11 reliability report adds to the growing knowledge base published in the first ten reports [1-10] and covers several key new topics. Gallium nitride (GaN) power devices have been in volume production since March 2010 and have established a remarkable field reliability record. This report will discuss the strategy used to achieve this track record that relied upon tests forcing devise to fail under a variety of conditions to create strong and strong products for the industry.

Alejandro Pozo Ph.D., Shengke Zhang Ph.D., Ricardo Garcia, John Glaser Ph.D., Zhikai Tang Ph.D., and Robert Strittmatter Ph.D, Efficient Power Conversion Corporation

Download Reliability Report

Phase 11 reliability