Testing GaN to Failure to Create Devices More Robust than Silicon (Conducted in Chinese)
Date: January 26, 2021
Time: 11:00 AM (Beijing Time) Register Now!
Duration: 1 hour
Join the webinar to learn how to use…
- A physics-based lifetime model supporting evidence to project an eGaN device's lifetime under gate stress overall voltages and temperature ranges.
- A first-principles mathematical model describes the dynamic RDS(on)effect in eGaN FETs from the fundamental physics of hot carrier scattering into surface traps. This model is most useful for predicting lifetimes overall voltages and temperatures in more complex mission profiles.
- Field reliability data generated over a period of four years and 226 billion hours of operation, most of which are on vehicles or used in telecommunication base stations.
After registering, you will receive a confirmation email containing information about accessing the recorded webinar.
All registrants will be entered for a chance to win a copy of GaN Transistors for Efficient Power Conversion, Third Edition. One book will be given away per webinar, please read Giveaway Rules.
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Speaker: Dr. Shengke Zhang is Manager of Failure Analysis and Reliability at EPC, where he leads the conduction of failure analyses for all GaN transistors and ICs. Prior to joining EPC, he worked as Sr. Failure Analysis Engineer on RF-MEMS devices in the mobile industry. He earned his Ph.D. degree in Materials Science and Engineering from Arizona State University in 2016, under Dr. Nathan Newman in investigating low loss dielectrics for cellular and advanced computing applications. He received his B.S. degree from Huazhong University of Science and Technology in 2011. He was the author and co-author of more than 20 technical paper. He also serves as a committee member and internal liaison member for JEDEC's JC-70 Wide Bandgap Power Electronic Conversion Semiconductors Committee.