Testing GaN to Failure to Create Devices More Robust than Silicon (Conducted in Japanese)
Date: January 27, 2021
Time: 11:00 AM (Tokyo Time) Register Now!
Duration: 1 hour
Join the webinar to learn how to use…
- A physics-based lifetime model supporting evidence to project an eGaN device's lifetime under gate stress overall voltages and temperature ranges.
- A first-principles mathematical model describes the dynamic RDS(on)effect in eGaN FETs from the fundamental physics of hot carrier scattering into surface traps. This model is most useful for predicting lifetimes overall voltages and temperatures in more complex mission profiles.
- Field reliability data generated over a period of four years and 226 billion hours of operation, most of which are on vehicles or used in telecommunication base stations.
After registering, you will receive a confirmation email containing information about accessing the recorded webinar.
All registrants will be entered for a chance to win a copy of GaN Transistors for Efficient Power Conversion, Third Edition. One book will be given away per webinar, please read Giveaway Rules.
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Shoichi Yasuda joined EPC as the Vice President of Sales for Japan and Korea in October 2018 with over 20 years of work experience. His primary responsibilities at EPC are creating and implementing strategies to achieve the company’s sales objectives in Japan and Korea. Yasuda worked for a wide range of semiconductor companies holding positions as FAE, as well as Sales/Marketing management. Before joining EPC, he worked for a large stocking representative in Japan, where he acquired in-depth knowledge of EPC’s eGaN products and advantages. In representing EPC, Yasuda captured opportunities to demonstrate EPC’s solutions at various customers all over Japan, sharing with design engineers the latest technological development of gallium nitride devices and applications.