EPC9016 development board features 40 V, 33 A enhancement mode gallium nitride (eGaN®) FETs in parallel operation increasing current capability by 67% and optimum layout techniques maximize efficiency.
EL SEGUNDO, Calif.— April, 2014 — Efficient Power Conversion Corporation (EPC) introduces the EPC9016 half-bridge development board for high current, high step-down voltage, buck Intermediate Bus Converter (IBC) applications using eGaN FETs. In this application two low-side (synchronous rectifier) field effect transistors (FETs) are connected in parallel since they will be conducting for a much longer period compared to the single high side (control) FET.
eGaN FETs have superior current sharing capability compared to silicon MOSFETs, making them ideal for parallel operation. This development board expands upon EPC’s work on optimal layout based on ultra-low inductance packages. The optimum layout techniques used increase efficiency while reducing voltage overshoot and EMI.
The EPC9016 development board is a 40 V maximum device voltage, 33 A maximum output current, half-bridge and featuring the EPC2015 eGaN FET with an onboard LM5113 gate driver. The half-bridge configuration contains a single topside device and two parallel bottom devices and is recommended for high step-down ratio buck converter applications such as point-of-load converters and buck converters for non-isolated telecom infrastructure.
The development board is 2” x 1.5” and contains all critical components and layout for optimal switching performance. There are also various probe points to facilitate simple waveform measurement and efficiency calculation.
A Quick Start Guide, https://epc-co.com/epc/products/demo-boards/EPC9016.aspx, is included with the EPC9016 development board for reference and ease of use.
EPC9016 development boards are priced at $130 each and are available for immediate delivery from Digi-Key at http://www.digikey.com/suppliers/us/efficient-power-conversion.page?&lang=en
Design Information and Support for eGaN FETs:
EPC is the leader in enhancement mode gallium nitride based power management devices. EPC was the first to introduce enhancement-mode gallium-nitride-on-silicon (eGaN) FETs as power MOSFET replacements in applications such as DC-DC converters, wireless power transfer, envelope tracking, RF transmission, solar micro inverters, remote sensing technology (LiDAR), and Class-D audio amplifiers with device performance many times greater than the best silicon power MOSFETs.
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eGaN is a registered trademark of Efficient Power Conversion Corporation, Inc.
Efficient Power Conversion Corporation Joe Engle, 310.986.0350 [email protected]