Dr. Glaser will be creating benchmark power converter designs and assisting customers in the use of eGaN FETs® for high frequency, high performance power conversion systems
EL SEGUNDO, Calif.—June 2014 — Efficient Power Conversion Corporation (EPC) is proud to announce that Dr. John Glaser has joined the EPC engineering team as Director, Applications Engineering.
As a member of the EPC applications team, Dr. Glaser’s focus will be on designing lower loss and higher power density benchmark architectures and converters that demonstrate the benefits of using gallium nitride transistors. His initial focus will be on their use in high voltage applications. Dr. Glaser’s research and practical experience in these applications will be shared with customers to accelerate customer designs using high performance eGaN FETs. His designs will demonstrate GaN transistors’ superior performance over MOSFETs.
Dr. Glaser earned a doctorate in electrical engineering from the University of Arizona, where he also earned his master’s degree. His undergraduate degree is from the University of Illinois, Urbana-Champaign. Prior to joining EPC, Dr. Glaser was a senior engineer at the General Electric Global Research Center for over 16 years, where he served various technical and project leadership roles for a wide variety of power processing projects. His projects included energy efficient lighting, RF power sources, silicon carbide semiconductor applications, advanced magnetic component modeling and design, appliance controls, radar power supplies, aircraft power, failure analysis and correction. In addition, Dr. Glaser has served as an adjunct professor teaching power electronics at Rensselaer Polytechnic Institute in Troy, New York.
Dr. Glaser joins an exceptional team of application engineers who have demonstrated not only direct support of customers’ adoption of eGaN power transistors but have also contributed to the rapidly expanding bibliography of technical literature on gallium nitride technology, as evidenced by numerous technical articles and presentations, including an upcoming Wiley publication of the EPC team’s second edition of the Gallium Nitride for Efficient Power Conversion textbook.
EPC is the leader in enhancement mode gallium nitride based power management devices. EPC was the first to introduce enhancement-mode gallium-nitride-on-silicon (eGaN) FETs as power MOSFET replacements in applications such as DC-DC converters, wireless power transfer, envelope tracking, RF transmission, solar micro inverters, remote sensing technology (LiDAR), and Class-D audio amplifiers with device performance many times greater than the best silicon power MOSFETs.
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