EPC2105 GaN half bridge offers power systems designers a solution that increases efficiency and power density for complete buck converter systems approaching 98% at 10 A when switching at 300 kHz and converting from 48 V to 12 V, and 84% at 14 A when switching at 300 kHz and converting from 48 V to 1.0 V.
EL SEGUNDO, Calif. — November 2014 — EPC announces the EPC2105, 80 V enhancement-mode monolithic GaN transistor half bridge. By integrating two eGaN® power FETs into a single device, interconnect inductances and the interstitial space needed on the PCB are eliminated. This increases both efficiency (especially at higher frequencies) and power density, while reducing assembly costs to the end user’s power conversion system. The EPC2105 is ideal for high frequency DC-DC conversion and enables efficient single stage conversion from 48 V directly to 1 V system loads.
Each device within the EPC2105 half-bridge component has a voltage rating of 80 V. The upper FET has a typical RDS(on) of 10 mΩ, and the lower FET has a typical RDS(on) of 2.3 mΩ. The high-side FET is approximately one-fourth the size of the low-side device to optimize efficient DC-DC conversion in buck converters with a high VIN/VOUT ratio. The EPC2105 comes in a chip-scale package for improved switching speed and thermal performance, and is only 6.05 mm x 2.3 mm for increased power density.
The EPC9041 is 2” x 1.5” and contains one EPC2105 integrated half-bridge component using the Texas Instruments LM5113 gate driver, supply and bypass capacitors. The board has been laid out for optimal switching performance and there are various probe points to facilitate simple waveform measurement and efficiency calculation.
Price and Availability
The EPC2105 monolithic half-bridge price for 1K units is $7.17 each
The EPC9041 development boards are priced at $137.75 each
Both are available for immediate delivery from Digi-Key at https://www.digikey.com/en/supplier-centers/epc
Design Information and Support for eGaN FETs:
EPC is the leader in enhancement mode gallium nitride based power management devices. EPC was the first to introduce enhancement-mode gallium-nitride-on-silicon (eGaN) FETs as power MOSFET replacements in applications such as DC-DC converters, wireless power transfer, envelope tracking, RF transmission, power inverters, remote sensing technology (LiDAR), and Class-D audio amplifiers with device performance many times greater than the best silicon power MOSFETs.
eGaN is a registered trademark of Efficient Power Conversion Corporation, Inc.
Efficient Power Conversion Corporation Joe Engle, 310.986.0350 [email protected]