New EPC2029 eGaN® power transistor extends EPC’s power transistor portfolio with high performance, wider pitch chip-scale package for ease of high volume manufacturing and enhanced compatibility with mature manufacturing processes and assembly lines.
EL SEGUNDO, Calif.—April 2015 — Efficient Power Conversion Corporation (EPC) announces the introduction of an eGaN FET designed with a wider pitch connection layout. The first in a new family of “Relaxed Pitch” devices, the EPC2029 80 V, 31 A eGaN FET features a 1 mm ball pitch. The wider pitch allows for placement of additional and larger vias under the device to enable high current carrying capability despite the extremely small 2.6 mm x 4.6 mm footprint.
Compared to a state-of-the-art silicon power MOSFET with similar on-resistance, the EPC2029 is much smaller and has many times superior switching performance. The EPC2029 is ideal for applications such as high frequency DC-DC converters, synchronous rectification in DC/DC and AC/DC converters, motor drives, and class-D audio.
To simplify the evaluation process of this latest high performance eGaN FET, the EPC9046 development board is available to support easy “in circuit” performance evaluation of the EPC2029.
The board is a half-bridge topology with onboard gate drives, featuring the EPC2029 eGaN power transistor. The board is 2” x 2” and contain two eGaN FETs using the Texas Instruments LM5113 gate driver, supply and bypass capacitors. It contains all critical components and is laid out for optimal switching performance with additional area to add buck output filter components. There are also various probe points to facilitate simple waveform measurement and efficiency calculation.
Price and Availability
Pricing for the EPC2029 power transistors at 1K units is $6.03 each and pricing for the EPC9046 development board is $137.75. Both products are available for immediate delivery from Digi-Key at https://www.digikey.com/en/supplier-centers/epc
Design Information and Support:
EPC is the leader in enhancement mode gallium nitride based power management devices. EPC was the first to introduce enhancement-mode gallium-nitride-on-silicon (eGaN) FETs as power MOSFET replacements in applications such as DC-DC converters, wireless power transfer, envelope tracking, RF transmission, power inverters, remote sensing technology (LiDAR), and Class-D audio amplifiers with device performance many times greater than the best silicon power MOSFETs.
eGaN is a registered trademark of Efficient Power Conversion Corporation, Inc.
Efficient Power Conversion Corporation Joe Engle, 310.986.0350 [email protected]