With the new 100 V EPC2104 eGaN®half bridge, a system efficiency of a complete buck converter using the EPC2104 is greater than 97% at 22 A switching at 300 kHz, and approaching 97% at 22 A when switching at 500 kHz, achieved when converting from 48 V to 12 V.
EL SEGUNDO, Calif. — April 2015 — EPC announces the EPC2104, 100 V enhancement-mode monolithic GaN transistor half bridge. By integrating two eGaN® power FETs into a single device, interconnect inductances and the interstitial space needed on the PCB are eliminated, resulting in a 50% reduction in board area occupied by the transistors. This increases both efficiency (especially at higher frequencies) and power density, while reducing assembly costs to the end user’s power conversion system.
The EPC2104 comes in a chip-scale package for improved switching speed and thermal performance, and is only 6.05 mm x 2.3 mm for increased power density. The EPC2104 is ideal for high frequency DC-DC conversion and motor drive applications.
The EPC9040 is 2” x 2” and contains one EPC2104 integrated half-bridge component using the Texas Instruments LM5113 gate driver, supply and bypass capacitors. The board has been laid out for optimal switching performance and there are various probe points to facilitate simple waveform measurement and efficiency calculation.
Price and Availability
The EPC2104 monolithic half-bridge price for 1K units is $8,31 each
The EPC9040 development boards are priced at $137.75 each
Both are available for immediate delivery from Digi-Key at https://www.digikey.com/en/supplier-centers/epc
Design Information and Support for eGaN FETs:
EPC is the leader in enhancement mode gallium nitride based power management devices. EPC was the first to introduce enhancement-mode gallium-nitride-on-silicon (eGaN) FETs as power MOSFET replacements in applications such as DC-DC converters, wireless power transfer, envelope tracking, RF transmission, power inverters, remote sensing technology (LiDAR), and Class-D audio amplifiers with device performance many times greater than the best silicon power MOSFETs.
eGaN is a registered trademark of Efficient Power Conversion Corporation, Inc.
Efficient Power Conversion Corporation Joe Engle, 310.986.0350 [email protected]