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New eGaN® power transistors extend EPC’s power transistor portfolio with high performance, wider pitch chip-scale package for ease of high volume manufacturing and enhanced compatibility with mature manufacturing processes and assembly lines
EL SEGUNDO, Calif.—May 2015 — Efficient Power Conversion Corporation (EPC) announces the introduction of three eGaN FETs designed with a wider pitch connection layout. These products expand EPC’s family of “Relaxed Pitch” devices featuring a 1 mm ball pitch. The wider pitch allows for placement of additional and larger vias under the device to enable high current carrying capability despite the extremely small 2.6 mm x 4.6 mm footprint.
Compared to a state-of-the-art silicon power MOSFET with similar on-resistance, these products are much smaller and have many times superior switching performance. They are ideal for applications such as high frequency DC-DC converters, synchronous rectification in DC/DC and AC/DC converters, motor drives, and class-D audio.