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Efficient Power Conversion (EPC) Expands Wide Pitch eGaN FET Family Enabling High Current in Small Footprint

Categories: Press Releases
Efficient Power Conversion (EPC) Expands Wide Pitch eGaN FET Family Enabling High Current in Small Footprint

New eGaN® power transistors extend EPC’s power transistor portfolio with high performance, wider pitch chip-scale package for ease of high volume manufacturing and enhanced compatibility with mature manufacturing processes and assembly lines

EL SEGUNDO, Calif.—May 2015 — Efficient Power Conversion Corporation (EPC) announces the introduction of three eGaN FETs designed with a wider pitch connection layout. These products expand EPC’s family of “Relaxed Pitch” devices featuring a 1 mm ball pitch. The wider pitch allows for placement of additional and larger vias under the device to enable high current carrying capability despite the extremely small 2.6 mm x 4.6 mm footprint.

Compared to a state-of-the-art silicon power MOSFET with similar on-resistance, these products are much smaller and have many times superior switching performance. They are ideal for applications such as high frequency DC-DC converters, synchronous rectification in DC/DC and AC/DC converters, motor drives, and class-D audio.

Part Number VDS RDS(on)
(typ)
QG
(typ)
ID
(Pulsed)
Price
(1K Units)
EPC2030 40 V 1.8 mOhm 18 nC 495 A $3.46
EPC2031 60 V 2.0 mOhm 17 nC 450 A $3.48
EPC2032 100 V 3.0 mOhm 14 nC 300 A $3.52

Availability

All three products are available for immediate delivery from Digi-Key at https://www.digikey.com/en/supplier-centers/epc

Design Information and Support for eGaN FETs:

About EPC

EPC is the leader in enhancement mode gallium nitride based power management devices. EPC was the first to introduce enhancement-mode gallium-nitride-on-silicon (eGaN) FETs as power MOSFET replacements in applications such as DC-DC converters, wireless power transfer, envelope tracking, RF transmission, power inverters, remote sensing technology (LiDAR), and Class-D audio amplifiers with device performance many times greater than the best silicon power MOSFETs.

eGaN is a registered trademark of Efficient Power Conversion Corporation, Inc.

Press Contact

Efficient Power Conversion Corporation Joe Engle, 310.986.0350 [email protected]