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IDT and EPC Collaborate to Integrate Gallium Nitride and Silicon for Faster, Higher Efficiency Semiconductor Devices

Categories: Press Releases
IDT and EPC Collaborate to Integrate Gallium Nitride and Silicon for Faster, Higher Efficiency Semiconductor Devices
Graphic: Business Wire

Integrated Device Technology, Inc. (IDT®) (NASDAQ: IDTI) today announced its collaboration with Efficient Power Conversion (EPC) to develop technology based on Gallium nitride (GaN), a semiconductor material widely recognized for its speed and efficiency. Under their collaboration, the companies will explore integrating EPC’s eGaN® technology with leading IDT solutions.

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